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NCE4

CIT SWITCH

CIT

CIT Relay & Switch

NCE4003

NCE N-Channel Enhancement Mode Power MOSFET

Description TheNCE4003usesadvancedtrenchtechnologytoprovide excellentRDS(ON),lowgatecharge.Thisdeviceissuitablefor useasaBatteryprotectionorinotherswitchingapplication. GeneralFeatures ●VDS=40V,ID=3A RDS(ON)=33mΩ@VGS=10V(Typ) RDS(ON)=52mΩ@VGS=4.5V(Typ

NCEPOWERWuxi NCE Power Semiconductor Co., Ltd

無(wú)錫新潔能股份無(wú)錫新潔能股份有限公司

NCE4003A

NCE N-Channel Enhancement Mode Power MOSFET

Description TheNCE4003Ausesadvancedtrenchtechnologytoprovide excellentRDS(ON),lowgatecharge.Thisdeviceissuitablefor useasaBatteryprotectionorinotherswitchingapplication. GeneralFeatures ●VDS=40V,ID=3A RDS(ON)=32mΩ@VGS=10V(Typ) RDS(ON)=43mΩ@VGS=4.5V(Ty

NCEPOWERWuxi NCE Power Semiconductor Co., Ltd

無(wú)錫新潔能股份無(wú)錫新潔能股份有限公司

NCE4005

NCE N-Channel Enhancement Mode Power MOSFET

Description TheNCE4005usesadvancedtrenchtechnologytoprovide excellentRDS(ON),lowgatecharge.Thisdeviceissuitablefor useasaBatteryprotectionorinotherswitchingapplication. GeneralFeatures ●VDS=40V,ID=5A RDS(ON)=22mΩ@VGS=10V(Typ) RDS(ON)=36mΩ@VGS=4.5V(Typ

NCEPOWERWuxi NCE Power Semiconductor Co., Ltd

無(wú)錫新潔能股份無(wú)錫新潔能股份有限公司

NCE4009S

NCE N-Channel Enhancement Mode Power MOSFET

Description TheNCE4009Susesadvancedtrenchtechnologytoprovide excellentRDS(ON)andlowgatecharge.Thecomplementary MOSFETsmaybeusedtoformalevelshiftedhighside switch,andforahostofotherapplications. GeneralFeatures ●N-Channel VDS=40V,ID=9A RDS(ON)

NCEPOWERWuxi NCE Power Semiconductor Co., Ltd

無(wú)錫新潔能股份無(wú)錫新潔能股份有限公司

NCE4015S

NCE N-Channel Enhancement Mode Power MOSFET

Description TheNCE4015Susesadvancedtrenchtechnologyand designtoprovideexcellentRDS(ON)withlowgatecharge.It canbeusedinawidevarietyofapplications.GeneralFeatures ●VDS=40V,ID=15A RDS(ON)

NCEPOWERWuxi NCE Power Semiconductor Co., Ltd

無(wú)錫新潔能股份無(wú)錫新潔能股份有限公司

NCE4090G

NCE N-Channel Enhancement Mode Power MOSFET

Description TheNCE4090Gusesadvancedtrenchtechnologyand designtoprovideexcellentRDS(ON)withlowgatecharge.It canbeusedinawidevarietyofapplications. GeneralFeatures ●VDS=40V,ID=90A RDS(ON)

NCEPOWERWuxi NCE Power Semiconductor Co., Ltd

無(wú)錫新潔能股份無(wú)錫新潔能股份有限公司

NCE4090K

NCE N-Channel Enhancement Mode Power MOSFET

Description TheNCE4090Kusesadvancedtrenchtechnologyand designtoprovideexcellentRDS(ON)withlowgatecharge.It canbeusedinawidevarietyofapplications. GeneralFeatures ●VDS=40V,ID=90A RDS(ON)=4.2mΩ@VGS=10V(Typ) RDS(ON)=7.2mΩ@VGS=4.5V(Typ) ●Highdensitycell

NCEPOWERWuxi NCE Power Semiconductor Co., Ltd

無(wú)錫新潔能股份無(wú)錫新潔能股份有限公司

NCE40ED120VT

1200V 40A Trench FS Gen.7 IGBT

GeneralDescription UsingNCE'sproprietaryhighdensitytrenchgatedesignandadvancedFS (FieldStop)Gen.7technology,the650VTrenchFSGen.7IGBTofferssuperior conductionandswitchingperformances,andeasyparalleloperation; Features ?TrenchFieldStopGen.7TechnologyOffering

NCEPOWERWuxi NCE Power Semiconductor Co., Ltd

無(wú)錫新潔能股份無(wú)錫新潔能股份有限公司

NCE40ED65VT

650V 40A Trench FS Gen.7 IGBT

GeneralDescription UsingNCE'sproprietaryhighdensitytrenchgatedesignandadvancedFS (FieldStop)Gen.7technology,the650VTrenchFSGen.7IGBTofferssuperior conductionandswitchingperformances,andeasyparalleloperation. Features ?TrenchfieldstopGen.7TechnologyOffering

NCEPOWERWuxi NCE Power Semiconductor Co., Ltd

無(wú)錫新潔能股份無(wú)錫新潔能股份有限公司

NCE40ER65BP

650V, 40A, Trench FS III Fast IGBT

GeneralDescription UsingNCE'sproprietarytrenchdesignandadvancedFS(FieldStop)second generationtechnology,the650VTrenchFSIIIIGBTofferssuperiorconductionand switchingperformances,andeasyparalleloperation; Features ?TrenchFSIIITechnologyoffering ?VerylowVCE(sa

NCEPOWERWuxi NCE Power Semiconductor Co., Ltd

無(wú)錫新潔能股份無(wú)錫新潔能股份有限公司

NCE40ER65BPF

650V, 40A, Trench FS III Fast IGBT

GeneralDescription UsingNCE'sproprietarytrenchdesignandadvancedFS(FieldStop)second generationtechnology,the650VTrenchFSIIIIGBTofferssuperiorconductionand switchingperformances,andeasyparalleloperation; Features ?TrenchFSIIITechnologyoffering ?VerylowVCE(sa

NCEPOWERWuxi NCE Power Semiconductor Co., Ltd

無(wú)錫新潔能股份無(wú)錫新潔能股份有限公司

NCE40ER65BT

650V, 40A, Trench FS III Fast IGBT

GeneralDescription UsingNCE'sproprietarytrenchdesignandadvancedFS(FieldStop)second generationtechnology,the650VTrenchFSIIIIGBTofferssuperiorconductionand switchingperformances,andeasyparalleloperation; Features ?TrenchFSIIITechnologyoffering ?VerylowVCE(sa

NCEPOWERWuxi NCE Power Semiconductor Co., Ltd

無(wú)錫新潔能股份無(wú)錫新潔能股份有限公司

NCE40H10K

NCE N-Channel Enhancement Mode Power MOSFET

Description TheNCE40H10Kusesadvancedtrenchtechnologyand designtoprovideexcellentRDS(ON)withlowgatecharge.It canbeusedinawidevarietyofapplications.GeneralFeatures ●VDS=40V,ID=100A RDS(ON)

NCEPOWERWuxi NCE Power Semiconductor Co., Ltd

無(wú)錫新潔能股份無(wú)錫新潔能股份有限公司

NCE40H11

NCE N-Channel Enhancement Mode Power MOSFET

Description TheNCE40H11usesadvancedtrenchtechnologyand designtoprovideexcellentRDS(ON)withlowgatecharge.It canbeusedinawidevarietyofapplications. GeneralFeatures ●VDS=40V,ID=110A RDS(ON)

NCEPOWERWuxi NCE Power Semiconductor Co., Ltd

無(wú)錫新潔能股份無(wú)錫新潔能股份有限公司

NCE40H11K

NCE N-Channel Enhancement Mode Power MOSFET

Description TheNCE40H11Kusesadvancedtrenchtechnologyand designtoprovideexcellentRDS(ON)withlowgatecharge.It canbeusedinawidevarietyofapplications. GeneralFeatures ●VDS=40V,ID=110A RDS(ON)

NCEPOWERWuxi NCE Power Semiconductor Co., Ltd

無(wú)錫新潔能股份無(wú)錫新潔能股份有限公司

NCE40H12A

NCE N-Channel Enhancement Mode Power MOSFET

Description TheNCE40H12Ausesadvancedtrenchtechnologyand designtoprovideexcellentRDS(ON)withlowgatecharge.It canbeusedinawidevarietyofapplications. GeneralFeatures ●VDS=40V,ID=120A RDS(ON)

NCEPOWERWuxi NCE Power Semiconductor Co., Ltd

無(wú)錫新潔能股份無(wú)錫新潔能股份有限公司

NCE40H14

NCE N-Channel Enhancement Mode Power MOSFET

Description TheNCE40H14usesadvancedtrenchtechnologyand designtoprovideexcellentRDS(ON)withlowgatecharge.It canbeusedinawidevarietyofapplications. GeneralFeatures ●VDS=40V,ID=140A RDS(ON)

NCEPOWERWuxi NCE Power Semiconductor Co., Ltd

無(wú)錫新潔能股份無(wú)錫新潔能股份有限公司

NCE40H25LL

NCE N-Channel Enhancement Mode Power MOSFET

Description TheNCE40H25LLusesadvancedtrenchtechnologyand designtoprovideexcellentRDS(ON)withlowgatecharge.It canbeusedinawidevarietyofapplications. Application ●Powerswitchingapplication ●Hardswitchedandhighfrequencycircuits ●Uninterruptiblepowersupply

NCEPOWERWuxi NCE Power Semiconductor Co., Ltd

無(wú)錫新潔能股份無(wú)錫新潔能股份有限公司

NCE40H29D

NCE N-Channel Enhancement Mode Power MOSFET

Description TheNCE40H29Dusesadvancedtrenchtechnologyand designtoprovideexcellentRDS(ON)withlowgatecharge.It canbeusedinawidevarietyofapplications. GeneralFeatures ●VDS=40V,ID=290A RDS(ON)

NCEPOWERWuxi NCE Power Semiconductor Co., Ltd

無(wú)錫新潔能股份無(wú)錫新潔能股份有限公司

詳細(xì)參數(shù)

  • 型號(hào):

    NCE4

  • 制造商:

    CIT

  • 制造商全稱:

    CIT Relay & Switch

  • 功能描述:

    CIT SWITCH

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
NCE
2016+
SOP8
5500
只做原裝,假一罰十,公司可開17%增值稅發(fā)票!
詢價(jià)
NCEPOWER
24+
SOT-23-3L
5000
只做原裝公司現(xiàn)貨
詢價(jià)
NCE
19+
SOP8
86611
原廠代理渠道,每一顆芯片都可追溯原廠;
詢價(jià)
NCE
18+
SOP-8
85600
保證進(jìn)口原裝可開17%增值稅發(fā)票
詢價(jià)
NCE
23+
SOP-8
63000
原裝正品現(xiàn)貨
詢價(jià)
NCE
18+
SOP-8
41200
原裝正品,現(xiàn)貨特價(jià)
詢價(jià)
NCE/新潔能
16+
TO-252
1480
原裝正品現(xiàn)貨,可開發(fā)票,假一賠十
詢價(jià)
NCE/新潔能
1948+
TO-220
18562
只做原裝正品現(xiàn)貨!或訂貨假一賠十!
詢價(jià)
新潔能
19+
TO-252
17200
NCE正規(guī)代理商只做原裝現(xiàn)貨優(yōu)勢(shì)
詢價(jià)
NCE
20+
TO-263
15800
原裝優(yōu)勢(shì)主營(yíng)型號(hào)-可開原型號(hào)增稅票
詢價(jià)
更多NCE4供應(yīng)商 更新時(shí)間2024-12-24 22:58:00