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MTP50N06V中文資料新澤西半導(dǎo)體數(shù)據(jù)手冊PDF規(guī)格書

MTP50N06V
廠商型號

MTP50N06V

功能描述

TMOS V??Power Field Effect Transistor

文件大小

112.94 Kbytes

頁面數(shù)量

2

生產(chǎn)廠商 New Jersey Semi-Conductor Products, Inc.
企業(yè)簡稱

NJSEMI新澤西半導(dǎo)體

中文名稱

新澤西半導(dǎo)體產(chǎn)品股份有限公司官網(wǎng)

原廠標(biāo)識
數(shù)據(jù)手冊

下載地址一下載地址二到原廠下載

更新時(shí)間

2025-4-30 17:47:00

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MTP50N06V規(guī)格書詳情

TMOS POWER FET 42 AMPERES 60 VOLTS RDS(on) = 0.028 OHM

N–Channel Enhancement–Mode Silicon Gate

TMOS V is a new technology designed to achieve an on–resistance area product about one–half that of standard MOSFETs. This new technology more than doubles the present cell density of our 50 and 60 volt TMOS devices. Just as with our TMOS E–FET designs, TMOS V is designed to withstand high energy in the avalanche and commutation modes. Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients.

New Features of TMOS V

? On–resistance Area Product about One–half that of Standard MOSFETs with New Low Voltage, Low RDS(on) Technology

? Faster Switching than E–FET Predecessors

Features Common to TMOS V and TMOS E–FETS

? Avalanche Energy Specified

? IDSS and VDS(on) Specified at Elevated Temperature

? Static Parameters are the Same for both TMOS V and TMOS E–FET

產(chǎn)品屬性

  • 型號:

    MTP50N06V

  • 功能描述:

    MOSFET DISC BY MFG 2/02

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶體管極性:

    N-Channel

  • 汲極/源極擊穿電壓:

    650 V

  • 閘/源擊穿電壓:

    25 V

  • 漏極連續(xù)電流:

    130 A 電阻汲極/源極

  • RDS(導(dǎo)通):

    0.014 Ohms

  • 配置:

    Single

  • 安裝風(fēng)格:

    Through Hole

  • 封裝/箱體:

    Max247

  • 封裝:

    Tube

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