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MTP50N06EL中文資料Motorola數(shù)據(jù)手冊PDF規(guī)格書
MTP50N06EL規(guī)格書詳情
TMOS E-FET? Power Field Effect Transistor
N–Channel Enhancement–Mode Silicon Gate
This advanced TMOS E–FET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a drain–to–source diode with a fast recovery time. Designed for low voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients.
? Avalanche Energy Specified
? Source–to–Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode
? Diode is Characterized for Use in Bridge Circuits
? IDSS and VDS(on) Specified at Elevated Temperature
產(chǎn)品屬性
- 型號：
MTP50N06EL
- 制造商：
ON Semiconductor
| 供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
O |
2020+ |
TO |
80000 |
只做自己庫存,全新原裝進(jìn)口正品假一賠百,可開13%增 |
詢價 | ||
MOTOROLA品牌 |
2016+ |
TO-220 |
6528 |
房間原裝進(jìn)口現(xiàn)貨假一賠十 |
詢價 | ||
ON |
TO-220 |
68900 |
原包原標(biāo)簽100%進(jìn)口原裝常備現(xiàn)貨! |
詢價 | |||
ON |
2020+ |
TO-220 |
16800 |
絕對原裝進(jìn)口現(xiàn)貨,假一賠十,價格優(yōu)勢!? |
詢價 | ||
ON |
19+ |
TO-220 |
86195 |
原廠代理渠道,每一顆芯片都可追溯原廠； |
詢價 | ||
MOT |
17+ |
TO-220 |
6200 |
詢價 | |||
MOT |
24+ |
N/A |
1580 |
詢價 | |||
MOTOROLA/摩托羅拉 |
22+ |
TO-220 |
8900 |
英瑞芯只做原裝正品!!! |
詢價 | ||
ON/安森美 |
2022+ |
TO-220 |
30000 |
進(jìn)口原裝現(xiàn)貨供應(yīng),原裝 假一罰十 |
詢價 | ||
O |
23+ |
TO220AB |
10000 |
公司只做原裝正品 |
詢價 |
