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MTD20P06HDL規(guī)格書詳情
HDTMOS E-FET? Power Field Effect Transistor
DPAK for Surface Mount
N-Channel Enhancement-Mode Silicon Gate
This advanced high–cell density HDTMOS E–FET is designed to with stand high energy in the avalanche and commutation modes. The new energy efficient design also offers a drain–to–source diode with a fast recovery time. Designed for low–voltage, high–speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits, and inductive loads. The avalanche energy capability is specified to eliminate the guess work in designs where inductive loads are switched, and to offer additional safety margin against unexpected voltage transients.
? Avalanche Energy Specified
? Source–to–Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode
? Diode is Characterized for Use in Bridge Circuits
? IDSSand VDS(on)Specified at Elevated Temperature
? Surface Mount Package Available in 16 mm, 13–inch/2500 Unit Tape & Reel, Add T4 Suffix to Part Number
? Available in Insertion Mount, Add –1 or 1 to Part Number
產(chǎn)品屬性
- 型號(hào)：
MTD20P06HDL
- 制造商：
ON Semiconductor
- 功能描述：
MOSFET P LOGIC D-PAK
| 供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫存 | 備注 | 價(jià)格 |
|---|---|---|---|---|---|---|---|
ON |
5 |
全新原裝!優(yōu)勢(shì)庫存熱賣中! |
詢價(jià) | ||||
onsemi(安森美) |
23+ |
- |
7793 |
支持大陸交貨,美金交易。原裝現(xiàn)貨庫存。 |
詢價(jià) | ||
ON |
23+ |
SOT252 |
30000 |
代理全新原裝現(xiàn)貨,價(jià)格優(yōu)勢(shì) |
詢價(jià) | ||
ON/安森美 |
24+ |
15000 |
只做原廠渠道 可追溯貨源 |
詢價(jià) | |||
24+ |
TO-220 |
6430 |
原裝現(xiàn)貨/歡迎來電咨詢 |
詢價(jià) | |||
ONS |
23+ |
TO-252 |
10000 |
原裝正品現(xiàn)貨 |
詢價(jià) | ||
ON |
2023+ |
80000 |
一級(jí)代理/分銷渠道價(jià)格優(yōu)勢(shì) 十年芯程一路只做原裝正品 |
詢價(jià) | |||
ON |
23+ |
TO-252 |
3447 |
原廠原裝正品 |
詢價(jià) | ||
ON |
19+ |
TO-252 |
33549 |
詢價(jià) | |||
ON(安森美) |
6000 |
詢價(jià) |
