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MRF284中文資料摩托羅拉數(shù)據(jù)手冊(cè)PDF規(guī)格書

MRF284
廠商型號(hào)

MRF284

功能描述

RF Power Field-Effect Transistors

文件大小

134.49 Kbytes

頁面數(shù)量

12

生產(chǎn)廠商 Motorola, Inc
企業(yè)簡(jiǎn)稱

Motorola摩托羅拉

中文名稱

加爾文制造公司官網(wǎng)

原廠標(biāo)識(shí)
數(shù)據(jù)手冊(cè)

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更新時(shí)間

2025-1-9 8:40:00

MRF284規(guī)格書詳情

The RF Sub–Micron MOSFET Line

RF Power Field-Effect Transistors

N–Channel Enhancement–Mode Lateral MOSFETs

Designed for PCN and PCS base station applications at frequencies from 1000 to 2600 MHz. Suitable for FM, TDMA, CDMA, and multicarrier amplifier applications. To be used in class A and class AB for PCN–PCS/cellular radio and wireless local loop.

? Specified Two–Tone Performance @ 2000 MHz, 26 Volts

Output Power = 30 Watts (PEP)

Power Gain = 9 dB

Efficiency = 30

Intermodulation Distortion = –29 dBc

? Typical Single–Tone Performance at 2000 MHz, 26 Volts

Output Power = 30 Watts (CW)

Power Gain = 9.5 dB

Efficiency = 45

? Characterized with Series Equivalent Large–Signal Impedance Parameters

? S–Parameter Characterization at High Bias Levels

? Excellent Thermal Stability

? Capable of Handling 10:1 VSWR, @ 26 Vdc, 2000 MHz, 30 Watts (CW) Output Power

產(chǎn)品屬性

  • 型號(hào):

    MRF284

  • 制造商:

    Freescale Semiconductor

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