MRF275G分立半導(dǎo)體產(chǎn)品的晶體管-FETMOSFET-射頻規(guī)格書(shū)PDF中文資料

The RF MOSFET Line

Power Field-Effect Transistor N–Channel Enhancement–Mode

Designed primarily for wideband large–signal output and driver stages from 100 – 500 MHz.

? Guaranteed Performance @ 500 MHz, 28 Vdc

Output Power — 150 Watts

Power Gain — 10 dB (Min)

Efficiency — 50 (Min)

100 Tested for Load Mismatch at all Phase Angles with VSWR 30:1

? Overall Lower Capacitance @ 28 V

Ciss— 135 pF

Coss— 140 pF

Crss— 17 pF

? Simplified AVC, ALC and Modulation

Typical data for power amplifiers in industrial and commercial applications:

? Typical Performance @ 400 MHz, 28 Vdc

Output Power — 150 Watts

Power Gain — 12.5 dB

Efficiency — 60

? Typical Performance @ 225 MHz, 28 Vdc

Output Power — 200 Watts

Power Gain — 15 dB

Efficiency — 65