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PBHV8110DH-AU

NPNLowVce(sat)Transistor

Features ?SiliconNPNepitaxialtype ?LowVce(sat)0.35V(max)@Ic/Ib=500mA/50mA ?Highcollectorcurrentcapability ?ExcellentDCcurrentgaincharacteristics ?AEC-Q101qualified ?LeadfreeincompliancewithEURoHS2.0 ?GreenmoldingcompoundasperIEC61249Standard ?PNPcomple

PANJITPan Jit International Inc.

強(qiáng)茂強(qiáng)茂股份有限公司

PBHV8110DW

NPNLowVce(sat)Transistor

Features ?SiliconNPNepitaxialtype ?LowVce(sat)0.35V(max)@Ic/Ib=500mA/50mA ?Highcollectorcurrentcapability ?ExcellentDCcurrentgaincharacteristics ?LeadfreeincompliancewithEURoHS2.0 ?GreenmoldingcompoundasperIEC61249Standard ?PNPcomplement:PBHV9110DW

PANJITPan Jit International Inc.

強(qiáng)茂強(qiáng)茂股份有限公司

PBHV8110DW-AU

NPNLowVce(sat)Transistor

Features ?SiliconNPNepitaxialtype ?LowVce(sat)0.35V(max)@Ic/Ib=500mA/50mA ?Highcollectorcurrentcapability ?ExcellentDCcurrentgaincharacteristics ?AEC-Q101qualified ?LeadfreeincompliancewithEURoHS2.0 ?GreenmoldingcompoundasperIEC61249Standard ?PNPcomple

PANJITPan Jit International Inc.

強(qiáng)茂強(qiáng)茂股份有限公司

PBSS8110D

LowVCEsat(BISS)transistors

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

PBSS8110D

100V,1ANPNlowVCEsat(BISS)transistor

Generaldescription NPNlowVCEsattransistorinaplasticSOT457(SC-74)package. Features ■SOT457package ■Lowcollector-emittersaturationvoltageVCEsat ■HighcollectorcurrentcapabilityICandICM ■Highefficiency,leadingtolessheatgeneration. Applications ■Majorapplication

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

PBSS8110D

100V,1ANPNlowVCEsat(BISS)transistor

Generaldescription NPNlowVCEsattransistorinaplasticSOT457(SC-74)package. Features ■SOT457package ■Lowcollector-emittersaturationvoltageVCEsat ■HighcollectorcurrentcapabilityICandICM ■Highefficiency,leadingtolessheatgeneration Applications ■Majorapplication

nxpNXP Semiconductors

恩智浦恩智浦半導(dǎo)體公司

PBSS8110D

100V,1ANPNlowVCEsat(BISS)transistor

Features *SOT457package *Lowcollector-emittersaturationvoltageVCEsat *HighcollectorcurrentcapabilityICandICM *Highefficiency,leadingtolessheatgeneration

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國)有限公司

PBSS8110S

100V,1ANPNlowVCEsat(BISS)transistor

DESCRIPTION NPNlowVCEsatBISStransistorinaSOT54plasticpackage. FEATURES ?SOT54package ?Lowcollector-emittersaturationvoltageVCEsat ?Highcollectorcurrentcapability:ICandICM ?Higherefficiencyleadingtolessheatgeneration. APPLICATIONS ?Automotive42Vpower ?Tel

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

PBSS8110T

100V,1ANPNlowVCEsat(BISS)transistor

DESCRIPTION NPNlowVCEsattransistorinaSOT23plasticpackage. PNPcomplement:PBSS9110T. FEATURES ?SOT23package ?Lowcollector-emittersaturationvoltageVCEsat ?Highcollectorcurrentcapability:ICandICM ?Higherefficiencyleadingtolessheatgeneration ?Reducedprinted-circ

nxpNXP Semiconductors

恩智浦恩智浦半導(dǎo)體公司

PBSS8110T

100V,1ANPNlowVCEsat(BISS)transistor

DESCRIPTION NPNlowVCEsattransistorinaSOT23plasticpackage. PNPcomplement:PBSS9110T. FEATURES ?SOT23package ?Lowcollector-emittersaturationvoltageVCEsat ?Highcollectorcurrentcapability:ICandICM ?Higherefficiencyleadingtolessheatgeneration ?Reducedprinted-circ

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

詳細(xì)參數(shù)

  • 型號：

    MP8110

  • 功能描述：

    電流靈敏放大器 40V Prec High-Side Current Sense Amp

  • RoHS：

    否

  • 制造商：

    Texas Instruments

  • 共模抑制比（最小值）：

    110 dB

  • 輸入補(bǔ)償電壓：

    80 uV

  • 電源電壓-最大：

    5.5 V

  • 電源電壓-最?。?/span>

    2.7 V

  • 電源電流：

    350 uA

  • 最大工作溫度：

    + 125 C

  • 最小工作溫度：

    - 40 C

  • 安裝風(fēng)格：

    SMD/SMT

  • 封裝/箱體：

    VQFN-16

  • 封裝：

    Reel

供應(yīng)商型號品牌批號封裝庫存備注價(jià)格
MPS
19+
SOIC8
85317
原廠代理渠道,每一顆芯片都可追溯原廠；
 詢價(jià)
MPS
1948+
MSOP-8
18562
只做原裝正品現(xiàn)貨!或訂貨假一賠十!
 詢價(jià)
MPS/美國芯源
23+
SOP-8
11742
一級代理原廠VIP渠道,專注軍工、汽車、醫(yī)療、工業(yè)、
 詢價(jià)
MPS/美國芯源
22+
SOP-8
25000
只做原裝,絕對原裝,假一罰十!
 詢價(jià)
MPS/美國芯源
22+
SOP-8
25000
只做原裝,原裝,假一罰十
 詢價(jià)
MPS
24+
SOP-8
5000
只做原裝公司現(xiàn)貨
 詢價(jià)
MPS
1708+
SOP-8
6500
只做原裝進(jìn)口,假一罰十
 詢價(jià)
MPS
25+23+
SMD
35449
絕對原裝正品全新進(jìn)口深圳現(xiàn)貨
 詢價(jià)
MPS
14+
MSOP8
23682
原盤環(huán)保/2500
 詢價(jià)
MPS
12+
SOIC-8
12000
進(jìn)口原裝只做原裝
 詢價(jià)
更多MP8110供應(yīng)商 更新時(shí)間2025-4-1 16:12:00

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