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PBSS8110S

100 V, 1 A NPN low VCEsat (BISS) transistor

DESCRIPTION NPNlowVCEsatBISStransistorinaSOT54plasticpackage. FEATURES ?SOT54package ?Lowcollector-emittersaturationvoltageVCEsat ?Highcollectorcurrentcapability:ICandICM ?Higherefficiencyleadingtolessheatgeneration. APPLICATIONS ?Automotive42Vpower ?Tel

PhilipsPhilips Semiconductors

飛利浦荷蘭皇家飛利浦

PBSS8110T

100V,1ANPNlowVCEsat(BISS)transistor

DESCRIPTION NPNlowVCEsattransistorinaSOT23plasticpackage. PNPcomplement:PBSS9110T. FEATURES ?SOT23package ?Lowcollector-emittersaturationvoltageVCEsat ?Highcollectorcurrentcapability:ICandICM ?Higherefficiencyleadingtolessheatgeneration ?Reducedprinted-circ

PhilipsPhilips Semiconductors

飛利浦荷蘭皇家飛利浦

PBSS8110T

LowVCEsat(BISS)transistors

PhilipsPhilips Semiconductors

飛利浦荷蘭皇家飛利浦

PBSS8110T

100V,1ANPNlowVCEsattransistor

1.Generaldescription NPNlowVCEsattransistorinasmallSOT23(TO-236AB)Surface-MountedDevice(SMD)plastic package. PNPcomplement:PBSS9110T 2.Featuresandbenefits ?Lowcollector-emittersaturationvoltageVCEsat ?Highcollectorcurrentcapability:ICandICM 3.Applications

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國(guó))有限公司

PBSS8110T-Q

100V,1ANPNlowVCEsattransistor

1.Generaldescription NPNlowVCEsattransistorinasmallSOT23(TO-236AB)Surface-MountedDevice(SMD)plastic package. PNPcomplement:PBSS9110T-Q 2.Featuresandbenefits ?Lowcollector-emittersaturationvoltageVCEsat ?Highcollectorcurrentcapability:ICandICM ?Qualifiedacc

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國(guó))有限公司

PBSS8110X

100V,1ANPNlowVCEsat(BISS)transistor

Generaldescription NPNlowVCEsatBreakthroughinSmallSignal(BISS)transistorinaSOT89(SC-62/TO-243)SMDplasticpackage. PNPcomplement:PBSS9110X. Features ■SOT89package ■Lowcollector-emittersaturationvoltageVCEsat ■Highcollectorcurrentcapability:ICandICM ■Higheffic

PhilipsPhilips Semiconductors

飛利浦荷蘭皇家飛利浦

PBSS8110X

100V,1ANPNlowVCEsat(BISS)transistor

Features *SOT89package *Lowcollector-emittersaturationvoltageVCEsat *Highcollectorcurrentcapability:ICandICM *Highefficiencyleadingtolessheatgeneration

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國(guó))有限公司

PBSS8110Y

100V,1ANPNlowVCEsat(BISS)transistor

Generaldescription NPNlowVCEsattransistorinaSOT363(SC-88)plasticpackage. Features ■SOT363package ■Lowcollector-emittersaturationvoltageVCEsat ■HighcollectorcurrentcapabilityICandICM ■Highefficiencyreducesheatgeneration. Applications ■Majorapplicationsegments

PhilipsPhilips Semiconductors

飛利浦荷蘭皇家飛利浦

PBSS8110Y

100V,1ANPNlowVCEsat(BISS)transistor

Features *SOT363package *Lowcollector-emittersaturationvoltageVCEsat *HighcollectorcurrentcapabilityICandICM *Highefficiencyreducesheatgeneration

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國(guó))有限公司

PBSS8110Z

LowVCEsat(BISS)transistors

PhilipsPhilips Semiconductors

飛利浦荷蘭皇家飛利浦

詳細(xì)參數(shù)

  • 型號(hào):

    PBSS8110S

  • 功能描述:

    兩極晶體管 - BJT TRANS BISS AMMO LARGE

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶體管極性:

    PNP 集電極—基極電壓

  • VCBO:

    集電極—發(fā)射極最大電壓

  • VCEO:

    - 40 V 發(fā)射極 - 基極電壓

  • VEBO:

    - 6 V

  • 增益帶寬產(chǎn)品fT:

    直流集電極/Base Gain hfe

  • Min:

    100 A

  • 安裝風(fēng)格:

    SMD/SMT

  • 封裝/箱體:

    PowerFLAT 2 x 2

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恩XP
22+
TO-92
20000
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22+
TO-92
20000
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PHI
2023+
SMD
18000
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ADI
23+
TO-92
8000
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ADI
23+
TO-92
7000
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恩XP
24+
4000
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恩XP
22+
NA
45000
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2022+
TO-92-3
38550
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25+
TO-226-3 TO-92-3(TO-226AA)
9350
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SOT23-3
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更多PBSS8110S供應(yīng)商 更新時(shí)間2025-6-12 14:18:00