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MMA20312B

Heterojunction Bipolar Transistor Technology (InGaP HBT)

HeterojunctionBipolarTransistorTechnology(InGaPHBT) HighEfficiency/LinearityAmplifier TheMMA20312Bisa2-stagehighefficiency,ClassABInGaPHBTamplifierdesignedforuseasalineardriveramplifierinwirelessbasestationapplicationsaswellasanoutputstageinfemtocellorrep

freescaleFreescale Semiconductor, Inc

飛思卡爾飛思卡爾半導(dǎo)體

MMA20312B

Heterojunction Bipolar Transistor Technology (InGaP HBT)

HeterojunctionBipolarTransistorTechnology(InGaPHBT) HighEfficiency/LinearityAmplifier TheMMA20312Bisa2-stagehighefficiency,ClassABInGaPHBTamplifierdesignedforuseasalineardriveramplifierinwirelessbasestationapplicationsaswellasanoutputstageinfemtocellorrep

nxpNXP Semiconductors

恩智浦恩智浦半導(dǎo)體公司

MMA20312B

Heterojunction Bipolar Transistor Technology

freescaleFreescale Semiconductor, Inc

飛思卡爾飛思卡爾半導(dǎo)體

MMA20312BT1

Heterojunction Bipolar Transistor Technology (InGaP HBT)

HeterojunctionBipolarTransistorTechnology(InGaPHBT) HighEfficiency/LinearityAmplifier TheMMA20312Bisa2-stagehighefficiency,ClassABInGaPHBTamplifierdesignedforuseasalineardriveramplifierinwirelessbasestationapplicationsaswellasanoutputstageinfemtocellorrep

freescaleFreescale Semiconductor, Inc

飛思卡爾飛思卡爾半導(dǎo)體

MMA20312BT1

Heterojunction Bipolar Transistor Technology (InGaP HBT)

HeterojunctionBipolarTransistorTechnology(InGaPHBT) HighEfficiency/LinearityAmplifier TheMMA20312Bisa2-stagehighefficiency,ClassABInGaPHBTamplifierdesignedforuseasalineardriveramplifierinwirelessbasestationapplicationsaswellasanoutputstageinfemtocellorrep

nxpNXP Semiconductors

恩智浦恩智浦半導(dǎo)體公司

MMA20312BV

Heterojunction Bipolar Transistor Technology

HeterojunctionBipolarTransistorTechnology(InGaPHBT) HighEfficiency/LinearityAmplifier TheMMA20312BVisa2-stagehighefficiency,ClassABInGaPHBTamplifierdesignedforuseasalineardriveramplifierinwirelessbasestationapplicationsaswellasanoutputstageinfemtocellorre

freescaleFreescale Semiconductor, Inc

飛思卡爾飛思卡爾半導(dǎo)體

MMA20312BV

Heterojunction Bipolar Transistor Technology (InGaP HBT)

HeterojunctionBipolarTransistorTechnology(InGaPHBT) HighEfficiency/LinearityAmplifier TheMMA20312BVisa2--stagehighefficiency,ClassABInGaPHBTamplifierdesignedforuseasalineardriveramplifierinwirelessbasestationapplicationsaswellasanoutputstageinfemtocellorr

nxpNXP Semiconductors

恩智浦恩智浦半導(dǎo)體公司

MMA20312BVT1

Heterojunction Bipolar Transistor Technology (InGaP HBT)

HeterojunctionBipolarTransistorTechnology(InGaPHBT) HighEfficiency/LinearityAmplifier TheMMA20312BVisa2--stagehighefficiency,ClassABInGaPHBTamplifierdesignedforuseasalineardriveramplifierinwirelessbasestationapplicationsaswellasanoutputstageinfemtocellorr

nxpNXP Semiconductors

恩智浦恩智浦半導(dǎo)體公司

MMA20312B_12

Heterojunction Bipolar Transistor Technology

freescaleFreescale Semiconductor, Inc

飛思卡爾飛思卡爾半導(dǎo)體

MMA20312BT1

Package：12-VFQFN 裸露焊盤；包裝：卷帶（TR）剪切帶（CT）Digi-Reel? 得捷定制卷帶 類別：RF/IF，射頻/中頻和 RFID 射頻放大器 描述：IC AMP LTE 1.8GHZ-2.2GHZ 12QFN

NXP USA Inc.

NXP USA Inc.

NXP USA Inc.

詳細(xì)參數(shù)

  • 型號(hào)：

    MMA20312B

  • 制造商：

    FREESCALE

  • 制造商全稱：

    Freescale Semiconductor, Inc

  • 功能描述：

    Heterojunction Bipolar Transistor Technology

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
FREESCALE
23+
NA
13000
原廠授權(quán)一級(jí)代理,專業(yè)海外優(yōu)勢(shì)訂貨,價(jià)格優(yōu)勢(shì)、品種
 詢價(jià)
FREESCA
2020+
QFN
830
百分百原裝正品 真實(shí)公司現(xiàn)貨庫(kù)存 本公司只做原裝 可
 詢價(jià)
Freescale
23+
QFN
952
全新原裝優(yōu)勢(shì)
 詢價(jià)
Freescale
24+
SMD
5500
長(zhǎng)期供應(yīng)原裝現(xiàn)貨實(shí)單可談
 詢價(jià)
原裝
22+23+
QFN
19324
絕對(duì)原裝正品全新進(jìn)口深圳現(xiàn)貨
 詢價(jià)
FREESCALE
1822+
QFN12
9852
只做原裝正品假一賠十為客戶做到零風(fēng)險(xiǎn)!!
 詢價(jià)
Freescale
14+
QFN12
88
全新進(jìn)口原裝
 詢價(jià)
FREESCALE
24+
65200
詢價(jià)
NXP
20+
12-VFQFN
1128
無線通信IC,大量現(xiàn)貨!
 詢價(jià)
FREESCALE
23+
QFN12
88
原裝正品代理渠道價(jià)格優(yōu)勢(shì)
 詢價(jià)
更多MMA20312B供應(yīng)商 更新時(shí)間2025-1-28 11:09:00

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