| 零件編號 | 下載&訂購 | 功能描述 | 制造商&上傳企業(yè) | LOGO |
|---|---|---|---|---|
MJE210 | COMPLEMENTARY SILICON POWER TRANSISTORS DESCRIPTION: TheCENTRALSEMICONDUCTORMJE200,MJE210typesarecomplementarysilicontransistorsdesignedforhighgainamplifierapplications. | CentralCentral Semiconductor Corp 美國中央半導(dǎo)體 | Central | |
MJE210 | Silicon PNP transistor in a TO-126F Plastic Package. Descriptions SiliconPNPtransistorinaTO-126FPlasticPackage. Features Lowcollector-emittersaturationvoltage,highcurrentgainbandwidthproduct,ComplementtoMJE200. Applications Designedforgeneralaudioamplifierapplications. | FOSHANFoshan Blue Rocket Electronics Co.,Ltd. 藍(lán)箭電子佛山市藍(lán)箭電子股份有限公司 | FOSHAN | |
MJE210 | 5 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 25 VOLTS 15 WATTS ComplementarySiliconPowerPlasticTransistors ...designedforlowvoltage,low–power,high–gainaudioamplifierapplications. ?Collector–EmitterSustainingVoltage— VCEO(sus)=25Vdc(Min)@IC=10mAdc ?HighDCCurrentGain—hFE=70(Min)@IC=500mAdc High | MotorolaMotorola, Inc 摩托羅拉加爾文制造公司 | Motorola | |
MJE210 | POWER TRANSISTORS COMPLEMENTARY SILICON ComplementarySiliconPowerPlasticTransistors Thesedevicesaredesignedforlowvoltage,low-power,high-gainaudioamplifierapplications. Features ?Collector-EmitterSustainingVoltage-VCEO(sus)=25Vdc(Min)@IC=10mAdc ?HighDCCurrentGain-hFE=70(Min)@IC=500mAdc | ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司 | ONSEMI | |
MJE210 | SILICON PNP TRANSISTOR DESCRIPTION TheMJE210isasiliconEpitaxial-BasePNPtransistorinJedecSOT-32plasticpackage,designedforlowvoltage,lowpower,highgainaudioamplifierapplications. ■STMicroelectronicsPREFERREDSALESTYPE ■PNPTRANSISTOR | STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團 | STMICROELECTRONICS | |
MJE210 | PNP (COLLECTOR-EMITTER SUSTAINING VOLTAGE LOW COLLECTOR-EMITTER) COLLECTOR-EMITTERSUSTAININGVOLTAGELOWCOLLECTOR-EMITTER SATURATIONVOLTAGE HIGHCURRENTGAIN-BANDWIDTH PRODUCT-MINfT=65MHz@Ic=-100mA ComplementarytoMJE200 | SamsungSamsung semiconductor 三星三星半導(dǎo)體 | Samsung | |
MJE210 | Feature Feature ?LowCollector-EmitterSaturationVoltage ?HighCurrentGainBandwidthProduct:fT=65MHz@IC=-100mA(Min.) ?ComplementtoMJE200 | FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司 | Fairchild | |
MJE210 | SILICON PNP TRANSISTOR ■STMicroelectronicsPREFERRED SALESTYPE ■PNPTRANSISTOR DESCRIPTION TheMJE210isasiliconEpitaxial-BasePNP transistorinJedecSOT-32plasticpackage, designedforlowvoltage,lowpower,highgain audioamplifierapplications. | STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團 | STMICROELECTRONICS | |
MJE210 | Complementary Silicon Power Plastic Transistors | ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司 | ONSEMI | |
MJE210 | 包裝：散裝 封裝/外殼：TO-225AA，TO-126-3 類別：分立半導(dǎo)體產(chǎn)品 晶體管 - 雙極性晶體管（BJT）- 單個 描述：TRANS PNP 40V 5A TO126 | ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司 | ONSEMI | |
MJE210 | 包裝：剪切帶（CT）帶盒（TB） 封裝/外殼：TO-225AA，TO-126-3 類別：分立半導(dǎo)體產(chǎn)品 晶體管 - 雙極性晶體管（BJT）- 單個 描述：TRANS PNP 25V 5A SOT32-3 | STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團 | STMICROELECTRONICS | |
SILICON PNP TRANSISTOR ■STMicroelectronicsPREFERRED SALESTYPE ■PNPTRANSISTOR DESCRIPTION TheMJE210isasiliconEpitaxial-BasePNP transistorinJedecSOT-32plasticpackage, designedforlowvoltage,lowpower,highgain audioamplifierapplications. | STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團 | STMICROELECTRONICS | ||
PLASTIC MEDIUM-POWER COMPLEMENTARY SILICON TRANSISTORS PLASTICMEDIUM-POWERCOMPLEMENTARYSILICONTRANSISTORS Designedforuseindriverandoutputstagesincomplementaryaudioamplifierapplications. ?HighDCCurrentGain- hFE=750(Win)@IC=30and40Adc ?TrueThreeLeadMonolithicConstruction—Emitter-BaseResistors toPreventL | NJSEMINew Jersey Semi-Conductor Products, Inc. 新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司 | NJSEMI | ||
PLASTIC MEDIUM-POWER COMPLEMENTARY SILICON TRANSISTORS PLASTICMEDIUM-POWERCOMPLEMENTARYSILICONTRANSISTORS Designedforuseindriverandoutputstagesincomplementaryaudioamplifierapplications. ?HighDCCurrentGain- hFE=750(Win)@IC=30and40Adc ?TrueThreeLeadMonolithicConstruction—Emitter-BaseResistors toPreventL | NJSEMINew Jersey Semi-Conductor Products, Inc. 新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司 | NJSEMI | ||
PLASTIC MEDIUM-POWER COMPLEMENTARY SILICON TRANSISTORS PLASTICMEDIUM-POWERCOMPLEMENTARYSILICONTRANSISTORS Designedforuseindriverandoutputstagesincomplementaryaudioamplifierapplications. ?HighDCCurrentGain- hFE=750(Win)@IC=30and40Adc ?TrueThreeLeadMonolithicConstruction—Emitter-BaseResistors toPreventL | NJSEMINew Jersey Semi-Conductor Products, Inc. 新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司 | NJSEMI | ||
PLASTIC MEDIUM-POWER COMPLEMENTARY SILICON TRANSISTORS PLASTICMEDIUM-POWERCOMPLEMENTARYSILICONTRANSISTORS Designedforuseindriverandoutputstagesincomplementaryaudioamplifierapplications. ?HighDCCurrentGain- hFE=750(Win)@IC=30and40Adc ?TrueThreeLeadMonolithicConstruction—Emitter-BaseResistors toPreventL | NJSEMINew Jersey Semi-Conductor Products, Inc. 新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司 | NJSEMI | ||
PLASTIC MEDIUM-POWER COMPLEMENTARY SILICON TRANSISTORS PLASTICMEDIUM-POWERCOMPLEMENTARYSILICONTRANSISTORS Designedforuseindriverandoutputstagesincomplementaryaudioamplifierapplications. ?HighDCCurrentGain- hFE=750(Win)@IC=30and40Adc ?TrueThreeLeadMonolithicConstruction—Emitter-BaseResistors toPreventL | NJSEMINew Jersey Semi-Conductor Products, Inc. 新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司 | NJSEMI | ||
PLASTIC MEDIUM-POWER COMPLEMENTARY SILICON TRANSISTORS PLASTICMEDIUM-POWERCOMPLEMENTARYSILICONTRANSISTORS Designedforuseindriverandoutputstagesincomplementaryaudioamplifierapplications. ?HighDCCurrentGain- hFE=750(Win)@IC=30and40Adc ?TrueThreeLeadMonolithicConstruction—Emitter-BaseResistors toPreventL | NJSEMINew Jersey Semi-Conductor Products, Inc. 新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司 | NJSEMI | ||
PLASTIC MEDIUM-POWER COMPLEMENTARY SILICON TRANSISTORS PLASTICMEDIUM-POWERCOMPLEMENTARYSILICONTRANSISTORS Designedforuseindriverandoutputstagesincomplementaryaudioamplifierapplications. ?HighDCCurrentGain- hFE=750(Win)@IC=30and40Adc ?TrueThreeLeadMonolithicConstruction—Emitter-BaseResistors toPreventL | NJSEMINew Jersey Semi-Conductor Products, Inc. 新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司 | NJSEMI | ||
Complementary Silicon Power Plastic Transistors Thesedevicesaredesignedforlowvoltage,low?power,high?gainaudioamplifierapplications. Features ?HighDCCurrentGain ?LowCollector?EmitterSaturationVoltage ?HighCurrent?Gain?BandwidthProduct ?AnnularConstructionforLowLeakage ?TheseDevicesarePb?FreeandareRoHSCo | ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司 | ONSEMI |
晶體管資料
- 型號：
- 別名：
三極管、晶體管、晶體三極管
- 生產(chǎn)廠家：
- 制作材料：
Si-PNP
- 性質(zhì)：
低頻或音頻放大 （LF）_功率放大 （L）
- 封裝形式：
直插封裝
- 極限工作電壓：
25V
- 最大電流允許值：
5A
- 最大工作頻率：
<1MHZ或未知
- 引腳數(shù)：
3
- 可代換的型號：
BD186,BD196,BD206,
- 最大耗散功率：
15W
- 放大倍數(shù)：
- 圖片代號：
B-21
- vtest：
25
- htest：
999900
- atest：
5
- wtest：
15
產(chǎn)品屬性
- 產(chǎn)品編號：
MJE210
- 制造商：
onsemi
- 類別：
分立半導(dǎo)體產(chǎn)品 > 晶體管 - 雙極性晶體管（BJT）- 單個
- 包裝：
散裝
- 晶體管類型：
PNP
- 不同?Ib、Ic 時?Vce 飽和壓降（最大值）：
1.8V @ 1A，5A
- 電流 - 集電極截止（最大值）：
100nA（ICBO）
- 不同?Ic、Vce?時 DC 電流增益 (hFE)（最小值）：
45 @ 2A，1V
- 頻率 - 躍遷：
65MHz
- 工作溫度：
-65°C ~ 150°C（TJ）
- 安裝類型：
通孔
- 封裝/外殼：
TO-225AA，TO-126-3
- 供應(yīng)商器件封裝：
TO-126
- 描述：
TRANS PNP 40V 5A TO126
| 供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
ST/意法 |
24+ |
TO-126 |
5480 |
只做原廠渠道 可追溯貨源 |
詢價 | ||
24+ |
5000 |
公司存貨 |
詢價 | ||||
MOTOROLA |
17+ |
TO-92 |
6200 |
詢價 | |||
ON |
23+ |
TO126 |
8653 |
全新原裝優(yōu)勢 |
詢價 | ||
2339+ |
TO126 |
5632 |
公司原廠原裝現(xiàn)貨假一罰十!特價出售!強勢庫存! |
詢價 | |||
MOTOROLA |
24+ |
11999 |
原裝現(xiàn)貨假一罰十 |
詢價 | |||
ON |
16+ |
TO-126 |
10000 |
全新原裝現(xiàn)貨 |
詢價 | ||
FAIRCHILD |
23+ |
NA |
19960 |
只做進口原裝,終端工廠免費送樣 |
詢價 | ||
ON |
23+ |
TO-126 |
11846 |
一級代理商現(xiàn)貨批發(fā),原裝正品,假一罰十 |
詢價 | ||
MOT |
23+ |
TO-126 |
9500 |
專做原裝正品,假一罰百! |
詢價 |
