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MJE200

5AMPEREPOWERTRANSISTORSCOMPLEMENTARYSILICON25VOLTS15WATTS

ComplementarySiliconPowerPlasticTransistors ...designedforlowvoltage,low–power,high–gainaudioamplifierapplications. ?Collector–EmitterSustainingVoltage— VCEO(sus)=25Vdc(Min)@IC=10mAdc ?HighDCCurrentGain—hFE=70(Min)@IC=500mAdc High

MotorolaMotorola, Inc

摩托羅拉加爾文制造公司

MJE200

POWERTRANSISTORSCOMPLEMENTARYSILICON

ComplementarySiliconPowerPlasticTransistors Thesedevicesaredesignedforlowvoltage,low-power,high-gainaudioamplifierapplications. Features ?Collector-EmitterSustainingVoltage-VCEO(sus)=25Vdc(Min)@IC=10mAdc ?HighDCCurrentGain-hFE=70(Min)@IC=500mAdc

ONSEMION Semiconductor

安森美半導體安森美半導體公司

MJE200

NPNEpitaxialSiliconTransistor

Feature ?LowCollector-EmitterSaturationVoltage ?HighCurrentGainBandwidthProduct:fT=65MHz@IC=100mA(Min.) ?ComplementtoMJE210

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

MJE200

iscSiliconNPNPowerTransistor

DESCRIPTION ?LowCollector–EmitterSaturationVoltage- ?DCCurrentGain-BandwidthProduct ?HighDCCurrentGain ?ComplementtoMJE210 APPLICATIONS ?Designedforlowvoltage,low-power,high-gainaudioamplifierapplications.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

MJE200

ComplementarySiliconPowerPlasticTransistors

ONSEMION Semiconductor

安森美半導體安森美半導體公司

MJE200

COMPLEMENTARYSILICONPOWERTRANSISTORS

DESCRIPTION: TheCENTRALSEMICONDUCTORMJE200,MJE210typesarecomplementarysilicontransistorsdesignedforhighgainamplifierapplications.

CentralCentral Semiconductor Corp

美國中央半導體

MJE200

SiliconNPNtransistorinaTO-126FPlasticPackage.

Descriptions SiliconNPNtransistorinaTO-126FPlasticPackage. Features Lowcollector-emittersaturationvoltage,highcurrentgainbandwidthproduct,ComplementtoMJE210. Applications Designedforgeneralaudioamplifierapplications.

FOSHANFoshan Blue Rocket Electronics Co.,Ltd.

藍箭電子佛山市藍箭電子股份有限公司

MJE200G

ComplementarySiliconPowerPlasticTransistors

ONSEMION Semiconductor

安森美半導體安森美半導體公司

MJE200G

ComplementarySiliconPowerPlasticTransistors

Thesedevicesaredesignedforlowvoltage,low?power,high?gainaudioamplifierapplications. Features ?HighDCCurrentGain ?LowCollector?EmitterSaturationVoltage ?HighCurrent?Gain?BandwidthProduct ?AnnularConstructionforLowLeakage ?TheseDevicesarePb?FreeandareRoHSCo

ONSEMION Semiconductor

安森美半導體安森美半導體公司

MJS200

LightningSurgeWithstandFuse

bel

Bel Fuse Inc.

詳細參數(shù)

  • 型號：

    MJD200TF

  • 功能描述：

    兩極晶體管 - BJT

  • RoHS：

    否

  • 制造商：

    STMicroelectronics

  • 晶體管極性：

    PNP 集電極—基極電壓

  • VCBO：

    集電極—發(fā)射極最大電壓

  • VCEO：

    - 40 V 發(fā)射極 - 基極電壓

  • VEBO：

    - 6 V

  • 增益帶寬產(chǎn)品fT：

    直流集電極/Base Gain hfe

  • Min：

    100 A

  • 安裝風格：

    SMD/SMT

  • 封裝/箱體：

    PowerFLAT 2 x 2

供應商型號品牌批號封裝庫存備注價格
ON/ONSemiconductor/安森
24+
TO-252
6200
新進庫存/原裝
 詢價
ON
23+
2800
正品原裝貨價格低
 詢價
SABKEN
TO-3P
68500
一級代理 原裝正品假一罰十價格優(yōu)勢長期供貨
 詢價
MOTOROLA
24+
7860
原裝現(xiàn)貨假一罰十
 詢價
FAIRCHILD
23+
NA
19960
只做進口原裝,終端工廠免費送樣
 詢價
FAIRCHILD
22+
原廠原封
2000
原裝現(xiàn)貨庫存.價格優(yōu)勢
 詢價
ON
24+
SOT252
2987
只售原裝自家現(xiàn)貨!誠信經(jīng)營!歡迎來電!
 詢價
ON
23+
TO-252
11846
一級代理商現(xiàn)貨批發(fā),原裝正品,假一罰十
 詢價
ON進口原裝
22+23+
TO-252
55304
絕對原裝正品現(xiàn)貨,全新深圳原裝進口現(xiàn)貨
 詢價
FAIRCHILD/仙童
1948+
TO-252
6852
只做原裝正品現(xiàn)貨!或訂貨假一賠十!
 詢價
更多MJD200TF供應商 更新時間2025-3-22 13:30:00

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