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零件編號(hào)	下載&訂購(gòu)	功能描述	制造商&上傳企業(yè)	LOGO
MJD122	文件：137.52 Kbytes Page：8 Pages	ComplementaryDarlingtonPowerTransistors Features ?D-PAKforSurfaceMountApplications ?HighDCCurrentGain ?Built-inaDamperDiodeatE-C ?LeadFormedforSurfaceMountApplications ?ElectricallySimilartoPopularTIP122 ?ComplementtoMJD127	FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司	Fairchild
MJD122	文件：284.04 Kbytes Page：8 Pages	ComplementaryDarlingtonPowerTransistors Features ?D-PAKforSurfaceMountApplications ?HighDCCurrentGain ?Built-inaDamperDiodeatE-C ?LeadFormedforSurfaceMountApplications ?ElectricallySimilartoPopularTIP122 ?ComplementtoMJD127	ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司	ONSEMI
MJD122	文件：284.04 Kbytes Page：8 Pages	SILICONPOWERTRANSISTORS8AMPERES100VOLTS20WATT Designedforgeneralpurposeamplifierandlowspeedswitchingapplications. ?LeadFormedforSurfaceMountApplicationsinPlasticSleeves(NoSuffix) ?StraightLeadVersioninPlasticSleeves(“–1”Suffix) ?LeadFormedVersionAvailablein16mmTapeandReel(“T4”Suffix) ?Sur	MotorolaMotorola, Inc 摩托羅拉加爾文制造公司	Motorola
MJD122	文件：81.7 Kbytes Page：6 Pages	COMPLEMENTARYSILICONPOWERDARLINGTONTRANSISTORS DESCRIPTION TheMJD122andMJD127formcomplementaryNPN-PNPpair.TheyaremanufacturedusingEpitaxialBasetechnologyforcost-effectiveperformance. ■STMicroelectronicsPREFERREDSALESTYPES ■LOWBASE-DRIVEREQUIREMENTS ■INTEGRATEDANTIPARALLELCOLLECTOR-EMITTERDIODE ■THROUGHHOLET	STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團(tuán)	STMICROELECTRONICS
MJD122	文件：87.53 Kbytes Page：7 Pages	ComplementaryDarlingtonPowerTransistor	ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司	ONSEMI
MJD122	文件：232.98 Kbytes Page：9 Pages	LowvoltagepowerDarlingtontransistor	STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團(tuán)	STMICROELECTRONICS
MJD122	文件：277.83 Kbytes Page：3 Pages	SiliconNPNepitaxialplanerTransistors Features ?HighDCCurrentGain ?Built-inaDamperDiodeatE-C ?HalogenFreeAvailableUponRequestByAddingSuffix-HF ?MoistureSensitivityLevel1 ?EpoxyMeetsUL94V-0FlammabilityRating ?LeadFreeFinish/RoHSCompliant(PSuffixDesignatesRoHS Compliant.SeeOrderingInfor	MCCMicro Commercial Components 美微科美微科半導(dǎo)體股份有限公司	MCC
MJD122	文件：244.33 Kbytes Page：1 Pages	TECHNICALSPECIFICATIONSOFNPNDARLINGTONTRANSISTOR Description Designedforuseingeneralpurposeamplifierandlowspeedswitchingapplications.	DCCOM Dc Components	DCCOM
MJD122	文件：683.2 Kbytes Page：4 Pages	NPNPLASTICENCAPSULATETRANSISTORS Features: HighDCcurrentgain ElectricallysimilartopopularTIP122 *Built-inadamperdiodeatE-C	WEITRON Weitron Technology	WEITRON
MJD122	文件：136.31 Kbytes Page：7 Pages	ComplementaryDarlingtonPowerTransistor	ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司	ONSEMI
MJD122	文件：246.92 Kbytes Page：2 Pages	iscSiliconNPNDarlingtonPowerTransistor DESCRIPTION ·LowCollector-Emittersaturationvoltage ·Leadformedforsurfacemountapplications ·HighDCcurrentgain ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation APPLICATIONS ·Designedforgeneralpurposeamplifierandlo	ISCInchange Semiconductor Company Limited 無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司	ISC
MJD122	文件：106.5 Kbytes Page：8 Pages	ComplementaryDarlingtonPowerTransistor	ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司	ONSEMI
MJD122	文件：211.88 Kbytes Page：1 Pages	COMPLEMENTARYSILICONPOWERDARLINGTONTRANSISTORS COMPLEMENTARYSILICONPOWERDARLINGTONTRANSISTORS HammerDrivers,AudioAmplifiersApplications PowerLinearandSwitchingApplications	TGS Tiger Electronic Co.,Ltd	TGS
MJD122	文件：315.34 Kbytes Page：2 Pages	iscSiliconNPNDarlingtonPowerTransistor	ISCInchange Semiconductor Company Limited 無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司	ISC
MJD122	文件：408.73 Kbytes Page：5 Pages	COMPLEMENTARYDARLINGTONPLASTICPOWERTRANSISTORS DesignedforGeneralPurposeAmplifierandLowSpeedSwitchingApplications	CDIL Continental Device India Limited	CDIL
MJD122	文件：1.15875 Mbytes Page：3 Pages	TRANSISTOR(NPN) TRANSISTOR（NPN） FEATURES ?HighDCCurrentGain ?ElectricallySimilartoPopularTIP122 ?Built-inaDamperDiodeatE-C	JIANGSUJiangsu Changjiang Electronics Technology Co., Ltd 長(zhǎng)電科技江蘇長(zhǎng)電科技股份有限公司	JIANGSU
MJD122	文件：2.2067 Mbytes Page：3 Pages	TO-252-2LPlastic-EncapsulateTransistors TRANSISTOR（NPN） Feature ●HighDCCurrentGain ●ElectricallySimilartoPopularTIP122 ●Built-inaDamperDiodeatE-C	HDSEMIJiangsu High diode Semiconductor Co., Ltd 蘇海德半導(dǎo)體蘇海德半導(dǎo)體有限公司	HDSEMI
MJD122	文件：205.51 Kbytes Page：1 Pages	COMPLEMENTARYSILICONPOWERDARLINGTONTRANSISTORS COMPLEMENTARYSILICONPOWERDARLINGTONTRANSISTORS HammerDrivers,AudioAmplifiersApplications PowerLinearandSwitchingApplications	TGS Tiger Electronic Co.,Ltd	TGS
MJD122	文件：337.92 Kbytes Page：3 Pages	SiliconNPNepitaxialplanerTransistors	MCCMicro Commercial Components 美微科美微科半導(dǎo)體股份有限公司	MCC
MJD122	文件：457.2 Kbytes Page：2 Pages	NPNSiliconDarlingtonTransistor FEATURES ?HighDCCurrentGain ?ElectricallySimilartoPopularTIP122 ?Built-inaDamperDiodeatE-C WedeclarethatthematerialofproductcompliancewithRoHSrequirements.	FS First Silicon Co., Ltd	FS

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供應(yīng)商	型號(hào)	品牌	批號(hào)	封裝	庫(kù)存	備注	價(jià)格
深圳市國(guó)宇半導(dǎo)體科技有限公司	MJB122	ON/安森美	23+	TO-263	10000	公司只做原裝正品	詢價(jià)
深圳市河鋒鑫科技有限公司	MJB122	ON/安森美	22+	TO-263	6000	十年配單,只做原裝	詢價(jià)
易創(chuàng)佳業(yè)科技（深圳）有限公司	MJB122	ON/安森美	23+	TO-263	6000	原裝正品，支持實(shí)單	詢價(jià)
深圳市創(chuàng)新跡電子有限公司	MJB122	ON/安森美	22+	TO-263	25000	只做原裝進(jìn)口現(xiàn)貨,專(zhuān)注配單	詢價(jià)
深圳和潤(rùn)天下電子科技有限公司	MJB122	ON/安森美	22+	TO-263	100903		詢價(jià)
深圳市宏捷佳電子科技有限公司	MJB122	ON	24+	TO-263	12300	獨(dú)立分銷(xiāo)商公司只做原裝誠(chéng)心經(jīng)營(yíng) 免費(fèi)試樣正品保證	詢價(jià)
深圳市佳鑫美電子科技有限公司	MJB18004D2T4	MOT	24+	大2腳半	2560	絕對(duì)原裝!現(xiàn)貨熱賣(mài)!	詢價(jià)
深圳市一線半導(dǎo)體有限公司	MJB18004D2T4	MOTOROLA	24+	TO-263	6400		詢價(jià)
瀚佳科技(深圳)有限公司	MJB18004D2T4	MOTOROLA	2020+	TO-263	16800	絕對(duì)原裝進(jìn)口現(xiàn)貨,假一賠十,價(jià)格優(yōu)勢(shì)!?	詢價(jià)
貿(mào)澤芯城（深圳）電子科技有限公司	MJB18004D2T4	MOTOROLA/摩托羅拉	23+	SOT220	13000	原廠授權(quán)一級(jí)代理,專(zhuān)業(yè)海外優(yōu)勢(shì)訂貨,價(jià)格優(yōu)勢(shì)、品種	詢價(jià)

更多MJB122供應(yīng)商更新時(shí)間2024-12-23 14:30:00

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