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MJ2955PNP

SILICON PLANAR POWER TRANSISTORS

GeneralPurposeSwitchingandAmplifierApplications 2N3055NPN MJ2955PNP

CDIL

Continental Device India Limited

MJB2955

iscSiliconPNPPowerTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

MJD2955

ComplementaryPowerTransistorsDPAKForSurfaceMountApplications

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

MJD2955

ComplementaryPowerTransistors

MJD2955(PNP) MJD3055(NPN) SILICONPOWERTRANSISTORS10AMPERES60VOLTS,20WATTS DPAKForSurfaceMountApplications Designedforgeneralpurposeamplifierandlowspeedswitchingapplications. Features ?LeadFormedforSurfaceMountApplicationsinPlasticSleeves(NoSuffix) ?Strai

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

MJD2955

COMPLEMENTARYSILICONPOWERTRANSISTORS

DESCRIPTION TheMJD2955andMJD3055formcomplementaryPNP-NPNpairs.TheyaremanufacturedusingEpitaxialBasetechnologyforcost-effectiveperformance. ■STMicroelectronicsPREFERRED SALESTYPES ■SURFACE-MOUNTINGTO-252(DPAK) POWERPACKAGEINTAPE&REEL (SUFFIXT4)

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

MJD2955

GeneralPurposeAmplifierLowSpeedSwitchingApplicationsD-PAKforSurfaceMountApplications

GeneralPurposeAmplifier LowSpeedSwitchingApplications D-PAKforSurfaceMountApplications ?LeadFormedforSurfaceMountApplications(NoSuffix) ?StraightLead(I-PAK,“-I“Suffix) ?ElectricallySimilartoPopularMJE2955T ?DCCurrentGainSpecifiedto10A ?HighCurrentG

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

MJD2955

ComplementaryPowerTransistors

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

MJD2955

COMPLEMENTARYPOWERTRANSISTORS

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

MJD2955

TRANSISTOR(PNP)

FEATURES ●DesignedforGeneralPurposeAmplifierandLowSpeed SwitchingApplications ●ElectricallySimiartoMJD3055 ●DCCurrentGainSpecifiedto10Amperes

FS

First Silicon Co., Ltd

MJD2955

GeneralPurposeAmplifier

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

MJD2955

ComplementaryPowerTransistors

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

MJD2955

iscSiliconPNPPowerTransistor

DESCRIPTION ?ExcellentSafeOperatingArea ?Collector-EmitterSaturationVoltage- :VCE(sat)=-1.1V(Max)@IC=-4A ?ComplementtoTypeMJD3055 ?DPAKforSurfaceMountApplications ?MinimumLot-to-Lotvariationsforrobustdeviceperformance andreliableoperation APPLICA

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

MJD2955

TO-251-3LPlastic-EncapsulateTransistors

TRANSISTOR(PNP) FEATURES ●DesignedforGeneralPurposeAmplifierandLowSpeed SwitchingApplications ●ElectricallySimiartoMJD3055 ●DCCurrentGainSpecifiedto10Amperes

JIANGSUJiangsu Changjiang Electronics Technology Co., Ltd

長電科技江蘇長電科技股份有限公司

MJD2955G

ComplementaryPowerTransistorsDPAKForSurfaceMountApplications

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

MJD2955G

ComplementaryPowerTransistors

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

MJD2955G

ComplementaryPowerTransistors

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

MJD2955G

ComplementaryPowerTransistors

ComplementaryPowerTransistors DPAKForSurfaceMountApplications Designedforgeneralpurposeamplifierandlowspeedswitchingapplications. Features ?LeadFormedforSurfaceMountApplicationsinPlasticSleeves(NoSuffix) ?StraightLeadVersioninPlasticSleeves(“?1”Suff

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

MJD2955TF

GeneralPurposeAmplifier

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

MJE2955

POWERTRANSISTORS(10A,60V,75W)

COMPLEMENTARYSILICONPOWERTRANSISTORS.

MOSPECMospec Semiconductor

統(tǒng)懋統(tǒng)懋半導(dǎo)體股份有限公司

MJE2955

GeneralPurposeandSwitchingApplications

GeneralPurposeandSwitchingApplications ?DCCurrentGainSpecifiedtoIC=10A ?HighCurrentGainBandwidthProduct:fT=2MHz(Min.)

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

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更多MJ2955PNP供應(yīng)商 更新時(shí)間2024-12-25 11:00:00