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MHVIC915R2中文資料摩托羅拉數(shù)據(jù)手冊(cè)PDF規(guī)格書

MHVIC915R2
廠商型號(hào)

MHVIC915R2

功能描述

746-960 MHz RF LDMOS Wideband Integrated Power Amplifier

文件大小

652.37 Kbytes

頁(yè)面數(shù)量

12 頁(yè)

生產(chǎn)廠商 Motorola, Inc
企業(yè)簡(jiǎn)稱

Motorola摩托羅拉

中文名稱

加爾文制造公司官網(wǎng)

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數(shù)據(jù)手冊(cè)

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更新時(shí)間

2024-12-23 10:43:00

MHVIC915R2規(guī)格書詳情

The RF Line

746–960 MHz RF LDMOS Wideband Integrated Power Amplifier

The MHVIC915R2 wideband integrated circuit is designed for CDMA and GSM/GSM EDGE applications. It uses Motorola’s newest high voltage (26 to 28 Volts) LDMOS IC technology and integrates a multi–stage structure. Its wideband On–Chip integral matching circuitry makes it usable from 746 to 960 MHz. The linearity performances cover all modulations for cellular applications: GSM, GSM EDGE, TDMA, and CDMA. The device is packaged in a PFP–16 flat pack package that provides excellent thermal performance through a solderable backside contact.

? Typical CDMA Performance: 869–894 MHz, 27 Volts, IDQ1 = 80 mA, IDQ2 = 120 mA, 1–Carrier N–CDMA, IS–95 CDMA 9–Channel Forward

Driver Application

Output Power — 23 dBm

Power Gain — 31 dB

Adjacent Channel Power Ratio —

–60 dBc @ 750 kHz in a 30 kHz BW

–66 dBc @ 1.98 MHz in a 30 kHz BW

Output Application

Output Power — 34 dBm

PAE = 21

Adjacent Channel Power Ratio —

–50 dBc @ 750 kHz in a 30 kHz BW

? Typical GSM Performance: 921–960 MHz, 26 Volts

Output Power — 15 W P1dB

Power Gain — 30 dB @ P1dB

Drain Efficiency = 56 @ P1dB

? On–Chip Matching (50 Ohm Input, >9 Ohm Output)

? On–Chip Current Mirror gm Sensing FET for Self Bias Application

? Integrated Temperature Compensation Capability

? Usable for SCPA and MCPA Architecture

? Integrated ESD Protection

? Available in Tape and Reel. R2 Suffix = 1,500 Units per 16 mm, 13 inch Reel.

產(chǎn)品屬性

  • 型號(hào):

    MHVIC915R2

  • 制造商:

    FREESCALE

  • 制造商全稱:

    Freescale Semiconductor, Inc

  • 功能描述:

    RF LDMOS Wideband Integrated Power Amplifier

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