MHVIC915RF/IF射頻/中頻RFID的射頻放大器規(guī)格書(shū)PDF中文資料

The RF Line

746–960 MHz RF LDMOS Wideband Integrated Power Amplifier

The MHVIC915R2 wideband integrated circuit is designed for CDMA and GSM/GSM EDGE applications. It uses Motorola’s newest high voltage (26 to 28 Volts) LDMOS IC technology and integrates a multi–stage structure. Its wideband On–Chip integral matching circuitry makes it usable from 746 to 960 MHz. The linearity performances cover all modulations for cellular applications: GSM, GSM EDGE, TDMA, and CDMA. The device is packaged in a PFP–16 flat pack package that provides excellent thermal performance through a solderable backside contact.

? Typical CDMA Performance: 869–894 MHz, 27 Volts, IDQ1 = 80 mA, IDQ2 = 120 mA, 1–Carrier N–CDMA, IS–95 CDMA 9–Channel Forward

Driver Application

Output Power — 23 dBm

Power Gain — 31 dB

Adjacent Channel Power Ratio —

–60 dBc @ 750 kHz in a 30 kHz BW

–66 dBc @ 1.98 MHz in a 30 kHz BW

Output Application

Output Power — 34 dBm

PAE = 21

Adjacent Channel Power Ratio —

–50 dBc @ 750 kHz in a 30 kHz BW

? Typical GSM Performance: 921–960 MHz, 26 Volts

Output Power — 15 W P1dB

Power Gain — 30 dB @ P1dB

Drain Efficiency = 56 @ P1dB

? On–Chip Matching (50 Ohm Input, >9 Ohm Output)

? On–Chip Current Mirror gm Sensing FET for Self Bias Application

? Integrated Temperature Compensation Capability

? Usable for SCPA and MCPA Architecture

? Integrated ESD Protection

? Available in Tape and Reel. R2 Suffix = 1,500 Units per 16 mm, 13 inch Reel.