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MGP11N60E中文資料安森美半導(dǎo)體數(shù)據(jù)手冊(cè)PDF規(guī)格書(shū)

MGP11N60E
廠商型號(hào)

MGP11N60E

功能描述

SHORT CIRCUIT RATED LOW ON-VOLTAGE

文件大小

120.21 Kbytes

頁(yè)面數(shù)量

5 頁(yè)

生產(chǎn)廠商 ON Semiconductor
企業(yè)簡(jiǎn)稱

ONSEMI安森美半導(dǎo)體

中文名稱

安森美半導(dǎo)體公司官網(wǎng)

原廠標(biāo)識(shí)
數(shù)據(jù)手冊(cè)

下載地址一下載地址二到原廠下載

更新時(shí)間

2025-3-25 20:00:00

人工找貨

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MGP11N60E規(guī)格書(shū)詳情

Insulated Gate Bipolar Transistor

N–Channel Enhancement–Mode Silicon Gate

This Insulated Gate Bipolar Transistor (IGBT) uses an advanced termination scheme to provide an enhanced and reliable high voltage–blocking capability. Its new 600 V IGBT technology is specifically suited for applications requiring both a high temperature short circuit capability and a low VCE(on). It also provides fast switching characteristics and results in efficient operation at high frequencies. This new E–series introduces an Energy–efficient, ESD protected, and short circuit rugged device.

? Industry Standard TO–220 Package

? High Speed: Eoff = 60 μJ/A typical at 125°C

? High Voltage Short Circuit Capability – 10 μs minimum at 125°C, 400 V

? Low On–Voltage 2.0 V typical at 8.0 A, 125°C

? Robust High Voltage Termination

? ESD Protection Gate–Emitter Zener Diodes

產(chǎn)品屬性

  • 型號(hào):

    MGP11N60E

  • 制造商:

    Rochester Electronics LLC

  • 功能描述:

    - Bulk

供應(yīng)商 型號(hào) 品牌 批號(hào) 封裝 庫(kù)存 備注 價(jià)格
ON/安森美
22+
TO-220
100000
代理渠道/只做原裝/可含稅
詢價(jià)
ON
1822+
TO-220
9852
只做原裝正品假一賠十為客戶做到零風(fēng)險(xiǎn)!!
詢價(jià)
INFINEON
24+
TO-TO-220
12300
獨(dú)立分銷商 公司只做原裝 誠(chéng)心經(jīng)營(yíng) 免費(fèi)試樣正品保證
詢價(jià)
ON/安森美
23+
NA
25630
原裝正品
詢價(jià)
ON/安森美
21+
NA
12820
只做原裝,質(zhì)量保證
詢價(jià)
ON
23+
TO-220
11846
一級(jí)代理商現(xiàn)貨批發(fā),原裝正品,假一罰十
詢價(jià)
Infineon/英飛凌
22+
TO-220
25000
只做原裝進(jìn)口現(xiàn)貨,專注配單
詢價(jià)
ON/安森美
22+
N/A
12245
現(xiàn)貨,原廠原裝假一罰十!
詢價(jià)
ON
24+
90000
詢價(jià)
ON/安森美
23+
TO
13000
原廠授權(quán)一級(jí)代理,專業(yè)海外優(yōu)勢(shì)訂貨,價(jià)格優(yōu)勢(shì)、品種
詢價(jià)