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MJE800

PlasticDarlingtonComplementarySiliconPowerTransistors

...designedforgeneral-purposeamplifierandlow-speedswitchingapplications. ?HighDCCurrentGain— hFE=2000(Typ)@IC=2.0Adc ?MonolithicConstructionwithBuilt-inBase-EmitterResistorstoLimitLeakage Multiplication ?ChoiceofPackages— MJE700andMJE800series

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司

MJE800

COMPLEMENTARYPOWERDARLINGTONTRANSISTORS

DESCRIPTION: TheCENTRALSEMICONDUCTORMJE700,MJE800seriesdevicesaremediumpowercomplementarysiliconDarlingtontransistorsdesignedforaudioamplifierapplicationsascomplementaryoutputdevices.

CentralCentral Semiconductor Corp

美國中央半導(dǎo)體

MJE800G

4.0AMPEREDARLINGTONPOWERTRANSISTORSCOMPLEMENTARYSILICON40WATT50WATT

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

MJE800G

PlasticDarlingtonComplementarySiliconPowerTransistors

Thesedevicesaredesignedforgeneral?purposeamplifierandlow?speedswitchingapplications. Features ?HighDCCurrentGain?hFE =2000(Typ)@IC =2.0Adc ?MonolithicConstructionwithBuilt?inBase?EmitterResistorsto LimitLeakage?Multiplication ?ChoiceofPackages?M

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

MJE800T

POWERTRANSISTORS(4.0A,60-80V,40W)

PLASTICDARLINGTONCOMPLEMENTARYSILICONPOWERTRANSISTORS ...designedforgeneral-purposeamplifierandlow-speedswitchingapplications. FEATURES *HighDCCurrentGain—hFE=2000(Typ)@IC=2.0A *MonolithicConstructionwithBuilt-inBase-EmitterResistorstoLimitLeakageMultiplicat

MOSPECMospec Semiconductor

統(tǒng)懋統(tǒng)懋半導(dǎo)體股份有限公司

MJE800T

DARLINGTONPOWERTRANSISTORSCOMPLEMENTARY

Thesedevicesaredesignedforgeneral?purposeamplifierandlow?speedswitchingapplications. Features ?HighDCCurrentGain?hFE =2000(Typ)@IC =2.0Adc ?MonolithicConstructionwithBuilt?inBase?EmitterResistorsto LimitLeakage?Multiplication ?ChoiceofPackages?M

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

MJE800T

4.0AMPEREDARLINGTONPOWERTRANSISTORSCOMPLEMENTARYSILICON40WATT50WATT

...designedforgeneral–purposeamplifierandlow–speedswitchingapplications. ?HighDCCurrentGain— hFE=2000(Typ)@IC=2.0Adc ?MonolithicConstructionwithBuilt–inBase–EmitterResistorstoLimitLeakage Multiplication ?ChoiceofPackages— MJE700andMJE800series

MotorolaMotorola, Inc

摩托羅拉加爾文制造公司

MJE800T

iscSiliconNPNDarlingtonPowerTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

MJE800T

PlasticDarlingtonComplementarySiliconPowerTransistors

...designedforgeneral-purposeamplifierandlow-speedswitchingapplications. ?HighDCCurrentGain— hFE=2000(Typ)@IC=2.0Adc ?MonolithicConstructionwithBuilt-inBase-EmitterResistorstoLimitLeakage Multiplication ?ChoiceofPackages— MJE700andMJE800series

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司

MJS800-R

TYPEMJSLIGHTNINGSURGEWITHSTANDFUSE

bel

Bel Fuse Inc.

產(chǎn)品屬性

  • 產(chǎn)品編號：

    MDS800

  • 制造商：

    Microsemi Corporation

  • 類別：

    分立半導(dǎo)體產(chǎn)品 > 晶體管 - 雙極（BJT）- 射頻

  • 包裝：

    托盤

  • 晶體管類型：

    NPN

  • 電壓 - 集射極擊穿（最大值）：

    65V

  • 頻率 - 躍遷：

    1.09GHz

  • 增益：

    8.6dB

  • 功率 - 最大值：

    1458W

  • 不同?Ic、Vce?時 DC 電流增益 (hFE)（最小值）：

    20 @ 1A，5V

  • 電流 - 集電極 (Ic)（最大值）：

    60A

  • 工作溫度：

    200°C（TJ）

  • 安裝類型：

    底座安裝

  • 封裝/外殼：

    55ST-1

  • 供應(yīng)商器件封裝：

    55ST-1

  • 描述：

    RF TRANS NPN 65V 1.09GHZ 55ST-1

供應(yīng)商型號品牌批號封裝庫存備注價格
ST/ASI
24+
87
現(xiàn)貨供應(yīng)
 詢價
GHZ
23+
TO-59
8510
原裝正品代理渠道價格優(yōu)勢
 詢價
Microsemi
1942+
N/A
908
加我qq或微信，了解更多詳細(xì)信息,體驗一站式購物
 詢價
MICROSEMI
1809+
55ST-1
7
就找我吧!--邀您體驗愉快問購元件!
 詢價
Microsemi Corporation
2022+
55ST-1
38550
全新原裝 支持表配單 中國著名電子元器件獨立分銷
 詢價
Microsemi Corporation
25+
55ST-1
9350
獨立分銷商 公司只做原裝 誠心經(jīng)營 免費試樣正品保證
 詢價
TECHSEM
23+
MODULE
13000
原廠授權(quán)一級代理,專業(yè)海外優(yōu)勢訂貨,價格優(yōu)勢、品種
 詢價
JSTCORPORATION
新
3101
全新原裝 貨期兩周
 詢價
JST/日壓
2508+
/
309575
一級代理，原裝現(xiàn)貨
 詢價
JST
18+
9800
代理進(jìn)口原裝/實單價格可談
 詢價
更多MDS800供應(yīng)商 更新時間2025-6-27 8:31:00

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