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MDP1

SERIES 34C Sub-Miniature Toggle Switches

grayhill

Grayhill, Inc

MDP10N055TH

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent:ID=130A@TC=25℃ ·DrainSourceVoltage :VDSS=100V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=5.5mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

MDP10N60G

N-Channel MOSFET 600V, 10A, 0.7(ohm)

GeneralDescription TheseN-channelMOSFETareproducedusingadvancedMagnaChip’sMOSFETTechnology,whichprovideslowon-stateresistance,highswitchingperformanceandexcellentquality. ThesedevicesaresuitabledeviceforSMPS,highSpeedswitchingandgeneralpurposeapplications. Feat

MGCHIP

MagnaChip Semiconductor.

MDP10N60GTH

N-Channel MOSFET 600V, 10A, 0.7(ohm)

GeneralDescription TheseN-channelMOSFETareproducedusingadvancedMagnaChip’sMOSFETTechnology,whichprovideslowon-stateresistance,highswitchingperformanceandexcellentquality. ThesedevicesaresuitabledeviceforSMPS,highSpeedswitchingandgeneralpurposeapplications. Feat

MGCHIP

MagnaChip Semiconductor.

MDP10N60GTH

isc N-Channel MOSFET Transistor

?FEATURES ?WithTO-220Fpackaging ?Highspeedswitching ?Veryhighcommutationruggedness ?Easytouse ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperationz ?APPLICATIONS ?PFCstages ?LCD&PDPTV ?Powersupply ?Sw

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

MDP11N60TH

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent:ID=11A@TC=25℃ ·DrainSourceVoltage :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.55Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-D

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

MDP12N50BTH

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent:ID=11.5A@TC=25℃ ·DrainSourceVoltage :VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.65Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

MDP12N50TH

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent:ID=11.5A@TC=25℃ ·DrainSourceVoltage :VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.65Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

MDP13N50

N-Channel MOSFET 500V, 13.0A, 0.5(ohm)

GeneralDescription TheMDP13N50usesadvancedMagnachip’sMOSFETTechnology,whichprovideslowonstateresistance,highswitchingperformanceandexcellentquality.MDP13N50issuitabledeviceforSMPS,HIDandgeneralpurposeapplications. Features ■VDS=500V ■ID=13.0A@VGS=10V ■R

MGCHIP

MagnaChip Semiconductor.

MDP13N50BTH

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent:ID=13A@TC=25℃ ·DrainSourceVoltage :VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.5Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DC

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

詳細(xì)參數(shù)

  • 型號：

    MDP1

  • 制造商：

    Panasonic Industrial Company

  • 功能描述：

    CHASSIS

供應(yīng)商型號品牌批號封裝庫存備注價格
DLE
05+
原廠原裝
997
只做全新原裝真實現(xiàn)貨供應(yīng)
 詢價
PASSIVE
25
DLE
3700
詢價
MAGNACHIP
15+
TO220
12000
原裝現(xiàn)貨價格有優(yōu)勢量大可以發(fā)貨
 詢價
23+
模塊
120
全新原裝正品,量大可訂貨!可開17%增值票!價格優(yōu)勢!
 詢價
DALE
2016+
DIP14
9000
只做原裝,假一罰十,公司可開17%增值稅發(fā)票!
 詢價
VISHAY
2020+
DIP-16
129
百分百原裝正品 真實公司現(xiàn)貨庫存 本公司只做原裝 可
 詢價
DLE
24+
DIP
6980
原裝現(xiàn)貨,可開13%稅票
 詢價
MDP
17+
DIP
6200
100%原裝正品現(xiàn)貨
 詢價
DALE
24+
2560
絕對原裝!現(xiàn)貨熱賣!
 詢價
DALE
24+
DIP14
500
詢價
更多MDP1供應(yīng)商 更新時間2025-3-20 10:31:00

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