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MDP12N50BTH

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent:ID=11.5A@TC=25℃ ·DrainSourceVoltage :VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.65Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

MDP12N50BTH

N-Channel MOSFET 500V, 11.5A, 0.65(ohm)

MGCHIP

MagnaChip Semiconductor.

MDP12N50F

N-ChannelMOSFET500V,11.5A,0.75ohm

MGCHIP

MagnaChip Semiconductor.

MDP12N50FTH

N-ChannelMOSFET500V,11.5A,0.75ohm

MGCHIP

MagnaChip Semiconductor.

MDP12N50TH

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=11.5A@TC=25℃ ·DrainSourceVoltage :VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.65Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

MDP12N50TH

N-ChannelMOSFET500V,11.5A,0.65(ohm)

MGCHIP

MagnaChip Semiconductor.

MSAER12N50A

N-CHANNELENHANCEMENTMODEPOWERMOSFET

Features ?Ultrafastrectifierinparallelwiththebodydiode(MSAEtypeonly) ?Ruggedpolysilicongatecellstructure ?IncreasedUnclampedInductiveSwitching(UIS)capability ?Hermeticallysealed,surfacemountpowerpackage ?Lowpackageinductance ?Verylowthermalresistance ?Rev

MicrosemiMicrosemi Corporation

美高森美美高森美公司

MSAFR12N50A

N-CHANNELENHANCEMENTMODEPOWERMOSFET

Features ?Ultrafastrectifierinparallelwiththebodydiode(MSAEtypeonly) ?Ruggedpolysilicongatecellstructure ?IncreasedUnclampedInductiveSwitching(UIS)capability ?Hermeticallysealed,surfacemountpowerpackage ?Lowpackageinductance ?Verylowthermalresistance ?Rev

MicrosemiMicrosemi Corporation

美高森美美高森美公司

SIHA12N50E

ESeriesPowerMOSFET

FEATURES ?Lowfigure-of-merit(FOM)RonxQg ?Lowinputcapacitance(Ciss) ?Reducedswitchingandconductionlosses ?Lowgatecharge(Qg) ?Avalancheenergyrated(UIS) ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 APPLICATIONS ?Comput

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

SIHA12N50E

ESeriesPowerMOSFET

FEATURES ?Lowfigure-of-merit(FOM)RonxQg ?Lowinputcapacitance(Ciss) ?Reducedswitchingandconductionlosses ?Lowgatecharge(Qg) ?Avalancheenergyrated(UIS) ?Materialcategorization:fordefinitionsofcompliancepleaseseewww.vishay.com/doc?99912 APPLICATIONS ?Computing

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
MAGNACHIP
20+
TO-220
36900
原裝優(yōu)勢(shì)主營(yíng)型號(hào)-可開(kāi)原型號(hào)增稅票
 詢價(jià)
MAGNACHIP/美格納
23+
TO-220
50000
全新原裝正品現(xiàn)貨,支持訂貨
 詢價(jià)
美格納
2022+
TO-220
12888
原廠代理 終端免費(fèi)提供樣品
 詢價(jià)
MAGNACHIP/美格納
23+
TO-220
13000
原廠授權(quán)一級(jí)代理,專業(yè)海外優(yōu)勢(shì)訂貨,價(jià)格優(yōu)勢(shì)、品種
 詢價(jià)
MAGNACHIP/美格納
23+
TO-220
20000
原裝正品 歡迎咨詢
 詢價(jià)
MAGNACHIP
23+
TO-220
12800
公司只有原裝 歡迎來(lái)電咨詢。
 詢價(jià)
MAGNACHIP/美格納
23+
NA/
18500
優(yōu)勢(shì)代理渠道,原裝正品,可全系列訂貨開(kāi)增值稅票
 詢價(jià)
MAGNACHIP/美格納
2022+
TO-220
30000
進(jìn)口原裝現(xiàn)貨供應(yīng),原裝 假一罰十
 詢價(jià)
MAGNACHIP/美格納
20+
TO-220
32500
現(xiàn)貨很近!原廠很遠(yuǎn)!只做原裝
 詢價(jià)
MAGNACHIP
24+
TO-TO-220
12300
獨(dú)立分銷商 公司只做原裝 誠(chéng)心經(jīng)營(yíng) 免費(fèi)試樣正品保證
 詢價(jià)
更多MDP12N50BTH供應(yīng)商 更新時(shí)間2025-3-27 18:13:00

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