零件編號 | 下載&訂購 | 功能描述 | 制造商&上傳企業(yè) | LOGO |
---|---|---|---|---|
N-Channel650V(D-S)MOSFET | VBSEMIVBsemi Electronics Co.,Ltd 微碧半導體微碧半導體(臺灣)有限公司 | VBSEMI | ||
600VN-ChannelMOSFET | BWTECH Bruckewell Technology LTD | BWTECH | ||
600VN-ChannelMOSFET | BWTECH Bruckewell Technology LTD | BWTECH | ||
N-ChannelEnhancementModePowerMOSFET | BWTECH Bruckewell Technology LTD | BWTECH | ||
600VN-ChannelMOSFET | BWTECH Bruckewell Technology LTD | BWTECH | ||
600VN-ChannelMOSFET | BWTECH Bruckewell Technology LTD | BWTECH | ||
TMOSPOWERFET2.0AMPERES600VOLTS | MotorolaMotorola, Inc 摩托羅拉加爾文制造公司 | Motorola | ||
HighEnergyPowerFET | ONSEMION Semiconductor 安森美半導體安森美半導體公司 | ONSEMI | ||
N-ChannelEnhancementModePowerMOSFET | CYSTEKECCystech Electonics Corp. 全宇昕科技全宇昕科技股份有限公司 | CYSTEKEC | ||
N-ChannelEnhancementModePowerMOSFET | CYSTEKECCystech Electonics Corp. 全宇昕科技全宇昕科技股份有限公司 | CYSTEKEC | ||
N-ChannelEnhancementModePowerMOSFET | CYSTEKECCystech Electonics Corp. 全宇昕科技全宇昕科技股份有限公司 | CYSTEKEC | ||
TMOSPOWERFET2.0AMPERES600VOLTSRDS(on)=3.8OHMS TMOSE-FET?PowerFieldEffectTransistor N–ChannelEnhancement–ModeSiliconGate ThishighvoltageMOSFETusesanadvancedterminationschemetoprovideenhancedvoltage–blockingcapabilitywithoutdegradingperformanceovertime.Inaddition,thisadvancedTMOSE–FETisdesignedtowithstandh | MotorolaMotorola, Inc 摩托羅拉加爾文制造公司 | Motorola | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=2A@TC=25℃ ·DrainSourceVoltage-VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=6Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive. | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導體股份有限公司 | ISC | ||
TMOSPOWERFET2.0AMPERES600VOLTSRDS(on)=3.8OHMS TMOSE-FET?PowerFieldEffectTransistor N–ChannelEnhancement–ModeSiliconGate ThishighvoltageMOSFETusesanadvancedterminationschemetoprovideenhancedvoltage–blockingcapabilitywithoutdegradingperformanceovertime.Inaddition,thisadvancedTMOSE–FETisdesignedtowithstandh | MotorolaMotorola, Inc 摩托羅拉加爾文制造公司 | Motorola | ||
N-ChannelEnhancement-ModeSiliconGate TMOSE?FETPowerFieldEffectTransistor N?ChannelEnhancement?ModeSiliconGate ThishighvoltageMOSFETusesanadvancedterminationschemetoprovideenhancedvoltage?blockingcapabilitywithoutdegradingperformanceovertime.Inaddition,thisadvancedTMOSE?FETisdesignedtowithstandhi | NJSEMINew Jersey Semi-Conductor Products, Inc. 新澤西半導體新澤西半導體產品股份有限公司 | NJSEMI | ||
PowerFieldEffectTransistor | ONSEMION Semiconductor 安森美半導體安森美半導體公司 | ONSEMI | ||
N-Channel650V(D-S)MOSFET FEATURES ?LowGateChargeQgResultsinSimpleDrive Requirement ?ImprovedGate,AvalancheandDynamicdV/dt Ruggedness ?FullyCharacterizedCapacitanceandAvalancheVoltage andCurrent ?ComplianttoRoHSdirective2002/95/EC | VBSEMIVBsemi Electronics Co.,Ltd 微碧半導體微碧半導體(臺灣)有限公司 | VBSEMI | ||
N-ChannelMOSFET | KEXINGuangdong Kexin Industrial Co.,Ltd 科信電子廣東科信實業(yè)有限公司 | KEXIN | ||
N-ChannelMOSFET | KEXINGuangdong Kexin Industrial Co.,Ltd 科信電子廣東科信實業(yè)有限公司 | KEXIN | ||
2.0A600VN-CHANNELPOWERMOSFET FEATURES RDS(ON)@VGS=10V UltraLowgatecharge(typical9.0nC) Lowreversetransfercapacitance(CRSS=typical5.0pF) Fastswitchingcapability Avalancheenergyspecified Improveddv/dtcapability,highruggedness | DGNJDZNanjing International Group Co 南晶電子東莞市南晶電子有限公司 | DGNJDZ |
供應商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
---|---|---|---|---|---|---|---|
MAGNACHIP |
TO-220F |
50 |
原裝現貨 |
詢價 | |||
MAGNACHIP/美格納 |
2405+ |
TO-220F |
4475 |
只做原裝正品渠道訂貨 |
詢價 | ||
美格納 |
22+23+ |
TO-220F |
26577 |
絕對原裝正品全新進口深圳現貨 |
詢價 | ||
MagnaChip |
24+ |
TO-220F |
9860 |
一級代理 |
詢價 | ||
MAGNACH |
2020+ |
TO-220F |
80000 |
只做自己庫存,全新原裝進口正品假一賠百,可開13%增 |
詢價 | ||
MAGNACHIP/美格納 |
23+ |
TO-220F |
50000 |
全新原裝正品現貨,支持訂貨 |
詢價 | ||
MAGNACHIP/美格納 |
2022 |
TO-220F |
80000 |
原裝現貨,OEM渠道,歡迎咨詢 |
詢價 | ||
MAGNACHIP/美格納 |
22+ |
TO220 |
9800 |
只做原裝正品假一賠十!正規(guī)渠道訂貨! |
詢價 | ||
MAGNACHIP |
22+ |
TO-220F |
12245 |
現貨,原廠原裝假一罰十! |
詢價 | ||
NOV |
No |
49 |
一級代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力 |
詢價 |
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相關庫存
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