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MAX3636ETM+T

包裝：卷帶（TR） 封裝/外殼：48-WFQFN 裸露焊盤 類別：集成電路（IC） 應(yīng)用特定時鐘/定時 描述：IC CLOCK GENERATOR PROGR 48TQFP

MicrosemiMicrosemi Corporation

美高森美美高森美公司

PSB-3636

SPLITBOBBINHIGHISOLATIONPOWERTRANSFORMERS

PMI

Premier Magnetics, Inc.

PSB-3636D

SPLITBOBBINHIGHISOLATIONPOWERTRANSFORMERS

PMI

Premier Magnetics, Inc.

PST3636NR

ICforCMOSSystemReset

MITSUMIMitsumi Electronics, Corp.

三美三美電機(jī)株式會社

PST3636UR

ICforCMOSSystemReset

MITSUMIMitsumi Electronics, Corp.

三美三美電機(jī)株式會社

PT3636

HighSensitivityUnipolarSwitch

PROLIFICProlific Technology Inc.

旺玖科技旺玖科技股份有限公司

PT3636

3.8V~24Voperation

etc2List of Unclassifed Manufacturers

etc未分類制造商etc2未分類制造商

RMQCBA3636DGBA

36-MbitDDR??IISRAM2-wordBurstArchitecture(2.5CycleReadlatency)

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

RMQCEA3636DGBA

36-MbitDDR?IISRAM2-wordBurstArchitecture(2.5CycleReadlatency)withODT

Description TheRMQCEA3636DGBAisa1,048,576-wordby36-bitandtheRMQCEA3618DGBAisa2,097,152-wordby18-bit synchronousquaddataratestaticRAMfabricatedwithadvancedCMOStechnologyusingfullCMOSsix-transistor memorycell.Itintegratesuniquesynchronousperipheralcircuitryand

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

RMQCHA3636DGBA

36-MbitDDR?IISRAM2-wordBurstArchitecture(2.0CycleReadlatency)

Description TheRMQCHA3636DGBAisa1,048,576-wordby36-bitandtheRMQCHA3618DGBAisa2,097,152-wordby18-bit synchronousquaddataratestaticRAMfabricatedwithadvancedCMOStechnologyusingfullCMOSsix-transistor memorycell.Itintegratesuniquesynchronousperipheralcircuitryand

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

RMQCLA3636DGBA

36-MbitDDR?IISRAM2-wordBurstArchitecture(2.0CycleReadlatency)

Description TheRMQCHA3636DGBAisa1,048,576-wordby36-bitandtheRMQCHA3618DGBAisa2,097,152-wordby18-bit synchronousquaddataratestaticRAMfabricatedwithadvancedCMOStechnologyusingfullCMOSsix-transistor memorycell.Itintegratesuniquesynchronousperipheralcircuitryand

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

RMQSAA3636DGBA

36-MbitQDR?IISRAM4-wordBurstArchitecture(2.5CycleReadlatency)

Description TheRMQSAA3636DGBAisa1,048,576-wordby36-bitandtheRMQSAA3618DGBAisa2,097,152-wordby18-bit synchronousquaddataratestaticRAMfabricatedwithadvancedCMOStechnologyusingfullCMOSsix-transistor memorycell.Itintegratesuniquesynchronousperipheralcircuitryand

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

RMQSDA3636DGBA

36-MbitQDR?IISRAM4-wordBurstArchitecture(2.5CycleReadlatency)withODT

Description TheRMQSDA3636DGBAisa1,048,576-wordby36-bitandtheRMQSDA3618DGBAisa2,097,152-wordby18-bit synchronousquaddataratestaticRAMfabricatedwithadvancedCMOStechnologyusingfullCMOSsix-transistor memorycell.Itintegratesuniquesynchronousperipheralcircuitryand

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

RMQSGA3636DGBA

36-MbitQDR?IISRAM4-wordBurstArchitecture(2.0CycleReadlatency)

Description TheRMQSGA3636DGBAisa1,048,576-wordby36-bitandtheRMQSGA3618DGBAisa2,097,152-wordby18-bit synchronousquaddataratestaticRAMfabricatedwithadvancedCMOStechnologyusingfullCMOSsix-transistor memorycell.Itintegratesuniquesynchronousperipheralcircuitryand

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

RMQSKA3636DGBA

36-MbitQDR?IISRAM4-wordBurstArchitecture(2.0CycleReadlatency)withODT

Features PowerSupply 1.8Vforcore(VDD),1.4VtoVDDforI/O(VDDQ) Clock Fastclockcycletimeforhighbandwidth Twoinputclocks(Kand/K)forpreciseDDRtimingatclockrisingedgesonly Twooutputechoclocks(CQand/CQ)simplifydatacaptureinhigh-speedsystems 

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

TPESD3636P

4=ChannelESDProtectionDiodeforUSBType=CandHDMI2.0

Features Ultralowcapacitance:0.25pFtypical(I/Oto1/0) Ultralowleakage:nAlevel BreakdownVoltage:5.5V(Minimum) Lowclampingvoitage Complieswithfollowingstandards: —|IEC61000-4-2(ESD)immunitytest Airdischarge:+20kV Contactdischarge:+15kV —IEC61000-4-4(EFT)80A(

TECHPUBLICTECH PUBLIC Electronics co LTD

臺舟電子臺舟電子股份有限公司

產(chǎn)品屬性

  • 產(chǎn)品編號：

    MAX3636ETM+T

  • 制造商：

    Microsemi Corporation

  • 類別：

    集成電路（IC） > 應(yīng)用特定時鐘/定時

  • 包裝：

    卷帶（TR）

  • PLL：

    是

  • 主要用途：

    以太網(wǎng)，光纖通道，PCI Express（PCIe），SONET/SDH

  • 輸入：

    LVCMOS，LVPECL，晶體

  • 輸出：

    LVCMOS，LVDS，LVPECL

  • 比率 - 輸入：

    3：10

  • 差分 - 輸入：

    是/是

  • 頻率 - 最大值：

    800MHz

  • 電壓 - 供電：

    3V ~ 3.6V

  • 工作溫度：

    -40°C ~ 85°C

  • 安裝類型：

    表面貼裝型

  • 封裝/外殼：

    48-WFQFN 裸露焊盤

  • 供應(yīng)商器件封裝：

    48-TQFN（7x7）

  • 描述：

    IC CLOCK GENERATOR PROGR 48TQFP

供應(yīng)商型號品牌批號封裝庫存備注價格
Microsemi Corporation
24+
48-TQFN(7x7)
53200
一級代理/放心采購
 詢價
MICROSEMI
20+
QFN-48
1001
就找我吧!--邀您體驗愉快問購元件!
 詢價
Microsemi Corporation
22+
48TQFN
9000
原廠渠道,現(xiàn)貨配單
 詢價
Microsemi Corporation
21+
48TQFN
13880
公司只售原裝,支持實單
 詢價
Microsemi Corporation
21+
48TQFN
610880
本公司只售原裝 支持實單
 詢價
Microsemi Corporation
23+
48TQFN
9000
原裝正品，支持實單
 詢價
Microsemi Corporation
24+
48-WFQFN 裸露焊盤
9350
獨立分銷商 公司只做原裝 誠心經(jīng)營 免費試樣正品保證
 詢價
Microsemi
1942+
N/A
908
加我qq或微信，了解更多詳細(xì)信息,體驗一站式購物
 詢價
MAXIM
23+
NA
25060
只做進(jìn)口原裝,終端工廠免費送樣
 詢價
Microsemi/美高森美
18+
QFN
23579
全新原裝現(xiàn)貨,可出樣品,可開增值稅發(fā)票
 詢價
更多MAX3636ETM+T供應(yīng)商 更新時間2024-12-28 10:00:00

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