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RMQSKA3636DGBA中文資料瑞薩數(shù)據(jù)手冊PDF規(guī)格書

RMQSKA3636DGBA
廠商型號

RMQSKA3636DGBA

功能描述

36-Mbit QDR? II SRAM 4-word Burst Architecture (2.0 Cycle Read latency) with ODT

文件大小

399.71 Kbytes

頁面數(shù)量

31

生產(chǎn)廠商 Renesas Technology Corp
企業(yè)簡稱

RENESAS瑞薩

中文名稱

瑞薩科技有限公司官網(wǎng)

原廠標(biāo)識
數(shù)據(jù)手冊

下載地址一下載地址二到原廠下載

更新時間

2024-10-26 18:04:00

RMQSKA3636DGBA規(guī)格書詳情

Features

 Power Supply

 1.8 V for core (VDD), 1.4 V to VDD for I/O (VDDQ)

 Clock

 Fast clock cycle time for high bandwidth

 Two input clocks (K and /K) for precise DDR timing at clock rising edges only

 Two output echo clocks (CQ and /CQ) simplify data capture in high-speed systems

 Clock-stop capability with ms restart

 I/O

 Separate independent read and write data ports with concurrent transactions

 100 bus utilization DDR read and write operation

 HSTL I/O

 User programmable output impedance

 PLL circuitry for wide output data valid window and future frequency scaling

 Data valid pin (QVLD) to indicate valid data on the output

 Function

 Four-tick burst for reduced address frequency

 Internally self-timed write control

 Simple control logic for easy depth expansion

 JTAG 1149.1 compatible test access port

 Package

 165 FBGA package (13 x 15 x 1.4 mm)

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