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MURT20010R

SiliconSuperFastRecoveryDiode

GENESIC

GeneSiC Semiconductor, Inc.

MV20010

GaAsVaractorDiodesAbruptJunction

Description Microsemi’sGaAsabruptjunctionvaractorsarefabricatedfromepitaxiallayersgrownatMicrosemiusingChemicalVaporDeposition.ThelayersareprocessedusingproprietarytechniquesresultinginahighQfactorandveryrepeatabletuningcurves.Thediodesareavailableinavarie

MicrosemiMicrosemi Corporation

美高森美美高森美公司

PD20010-E

RFpowertransistor,LdmoSTplasticfamilyN-channelenhancement-modelateralMOSFETs

Description ThePD20010-EisacommonsourceN-Channel,enhancement-modelateralfield-effectRFpowertransistor.Itisdesignedforhighgain,broadbandcommercialandindustrialapplications.Itoperatesat13.6Vincommonsourcemodeatfrequenciesofupto1GHz.PD20010-Eboaststheexcell

STMICROELECTRONICSSTMicroelectronics

意法半導體意法半導體集團

PD20010S-E

RFpowertransistor,LdmoSTplasticfamilyN-channelenhancement-modelateralMOSFETs

Description ThePD20010-EisacommonsourceN-Channel,enhancement-modelateralfield-effectRFpowertransistor.Itisdesignedforhighgain,broadbandcommercialandindustrialapplications.Itoperatesat13.6Vincommonsourcemodeatfrequenciesofupto1GHz.PD20010-Eboaststheexcell

STMICROELECTRONICSSTMicroelectronics

意法半導體意法半導體集團

PD20010STR-E

RFpowertransistor,LdmoSTplasticfamilyN-channelenhancement-modelateralMOSFETs

Description ThePD20010-EisacommonsourceN-Channel,enhancement-modelateralfield-effectRFpowertransistor.Itisdesignedforhighgain,broadbandcommercialandindustrialapplications.Itoperatesat13.6Vincommonsourcemodeatfrequenciesofupto1GHz.PD20010-Eboaststheexcell

STMICROELECTRONICSSTMicroelectronics

意法半導體意法半導體集團

PD20010TR-E

RFpowertransistor,LdmoSTplasticfamilyN-channelenhancement-modelateralMOSFETs

Description ThePD20010-EisacommonsourceN-Channel,enhancement-modelateralfield-effectRFpowertransistor.Itisdesignedforhighgain,broadbandcommercialandindustrialapplications.Itoperatesat13.6Vincommonsourcemodeatfrequenciesofupto1GHz.PD20010-Eboaststheexcell

STMICROELECTRONICSSTMicroelectronics

意法半導體意法半導體集團

PNE20010ER

200V,1Ahyperfastrecoveryrectifier

NEXPERIANexperia B.V. All rights reserved

安世安世半導體(中國)有限公司

PNE20010ER-Q

200V,1Ahyperfastrecoveryrectifier

1.Generaldescription Highpowerdensity,hyperfastrecoveryrectifierwithhigh-efficiencyplanartechnology, encapsulatedinasmallandflatleadSOD123WSurface-MountedDevice(SMD)plasticpackage. 2.Featuresandbenefits ?ReversevoltageVR≤200V ?ForwardcurrentIF≤1A ?Hyp

NEXPERIANexperia B.V. All rights reserved

安世安世半導體(中國)有限公司

PNE20010EXD

200V,1Ahyperfastrecoveryrectifier

1.Generaldescription Highpowerdensity,hyperfastrecoveryrectifierwithhigh-efficiencyplanartechnology, encapsulatedinaCFP2-HP(SOD323HP)powerandflatleadSurface-MountedDevice(SMD) plasticpackage. 2.Featuresandbenefits ?Reversevoltage:VR≤200V ?Forwardcurrent:I

NEXPERIANexperia B.V. All rights reserved

安世安世半導體(中國)有限公司

PNE20010EXD-Q

200V,1Ahyperfastrecoveryrectifier

1.Generaldescription Highpowerdensity,hyperfastrecoveryrectifierwithhigh-efficiencyplanartechnology, encapsulatedinaCFP2-HP(SOD323HP)powerandflatleadSurface-MountedDevice(SMD) plasticpackage. 2.Featuresandbenefits ?Reversevoltage:VR≤200V ?Forwardcurrent:I

NEXPERIANexperia B.V. All rights reserved

安世安世半導體(中國)有限公司

供應商型號品牌批號封裝庫存備注價格
Maxim
21+
25000
原廠原包 深圳現(xiàn)貨 主打品牌 假一賠百 可開票!
 詢價
Maxim
155
只做正品
 詢價
Analog Devices Inc./Maxim Inte
24+
20-WFQFN 裸露焊盤
9350
獨立分銷商 公司只做原裝 誠心經(jīng)營 免費試樣正品保證
 詢價
Maxim
22+
20-WFQFN
9000
原廠渠道,現(xiàn)貨配單
 詢價
Maxim Integrated
2021+
SOIC
57500
科研單位合格供應商!現(xiàn)貨庫存
 詢價
MAXIM(美信)
2447
TQFN-20-EP(4x4)
105000
nan一級代理專營品牌!原裝正品,優(yōu)勢現(xiàn)貨,長期排單
 詢價
MAXIM(美信)
2021+
TQFN-20-EP(4x4)
499
詢價
MAXIM/美信
23+
TQFN-20
3000
一級代理原廠VIP渠道,專注軍工、汽車、醫(yī)療、工業(yè)、
 詢價
MAXIM(美信)
23+
TQFN-20_EP(4x4)
9990
原裝正品，支持實單
 詢價
MAXIM/美信
22+
TQFN-20
18000
原裝正品
 詢價
更多MAX20010CATPDV供應商 更新時間2025-4-10 16:30:00

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