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M5M5256DFP-70VLL

262144-BIT (32768-WORD BY 8-BIT) CMOS STATIC RAM

DESCRIPTION TheM5M5256DFP,VP,RVis262,144-bitCMOSstaticRAMsorganizedas32,768-wordsby8-bitswhichisfabricatedusinghigh-performance3polysiliconCMOStechnology.TheuseofresistiveloadNMOScellsandCMOSperipheryresultsinahighdensityandlowpowerstaticRAM.Stand-bycurre

MitsubishiMitsubishi Electric Semiconductor

三菱電機三菱電機株式會社

M5M5256DFP-70VLL-I

262144-BIT (32768-WORD BY 8-BIT) CMOS STATIC RAM

DESCRIPTION TheM5M5256DFP,VP,RVis262,144-bitCMOSstaticRAMsorganizedas32,768-wordsby8-bitswhichisfabricatedusinghigh-performance3polysiliconCMOStechnology.TheuseofresistiveloadNMOScellsandCMOSperipheryresultsinahighdensityandlowpowerstaticRAM.Stand-bycurre

MitsubishiMitsubishi Electric Semiconductor

三菱電機三菱電機株式會社

M5M5256DFP-70VLL-W

262144-BIT (32768-WORD BY 8-BIT) CMOS STATIC RAM

DESCRIPTION TheM5M5256DFP,VP,RVis262,144-bitCMOSstaticRAMsorganizedas32,768-wordsby8-bitswhichisfabricatedusinghigh-performance3polysiliconCMOStechnology.TheuseofresistiveloadNMOScellsandCMOSperipheryresultsinahighdensityandlowpowerstaticRAM.Stand-bycurre

MitsubishiMitsubishi Electric Semiconductor

三菱電機三菱電機株式會社

M5M5256DFP-70G

262144-BIT(32768-WORDBY8-BIT)CMOSSTATICRAM

DESCRIPTION TheM5M5256DFP,VPis262,144-bitCMOSstaticRAMsorganizedas32,768-wordsby8-bitswhichisfabricatedusinghigh-performance3polysiliconCMOStechnology.TheuseofresistiveloadNMOScellsandCMOSperipheryresultsinahighdensityandlowpowerstaticRAM.Stand-bycur

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

M5M5256DFP-70GI

262144-BIT(32768-WORDBY8-BIT)CMOSSTATICRAM

DESCRIPTION TheM5M5256DFP,VPis262,144-bitCMOSstaticRAMsorganizedas32,768-wordsby8-bitswhichisfabricatedusinghigh-performance3polysiliconCMOStechnology.TheuseofresistiveloadNMOScellsandCMOSperipheryresultsinahighdensityandlowpowerstaticRAM.Stand-bycur

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

M5M5256DFP-70LL

262144-BIT(32768-WORDBY8-BIT)CMOSSTATICRAM

DESCRIPTION TheM5M5256DFP,VPis262,144-bitCMOSstaticRAMsorganizedas32,768-wordsby8-bitswhichisfabricatedusinghigh-performance3polysiliconCMOStechnology.TheuseofresistiveloadNMOScellsandCMOSperipheryresultsinahighdensityandlowpowerstaticRAM.Stand-bycur

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

M5M5256DFP-70LL

262144-BIT(32768-WORDBY8-BIT)CMOSSTATICRAM

DESCRIPTION TheM5M5256DP,FP,VP,RVis262,144-bitCMOSstaticRAMsorganizedas32,768-wordsby8-bitswhichisfabricatedusinghigh-performance3polysiliconCMOStechnology.TheuseofresistiveloadNMOScellsandCMOSperipheryresultsinahighdensityandlowpowerstaticRAM.Stand-bycur

MitsubishiMitsubishi Electric Semiconductor

三菱電機三菱電機株式會社

M5M5256DFP-70LLI

262144-BIT(32768-WORDBY8-BIT)CMOSSTATICRAM

DESCRIPTION TheM5M5256DFP,VPis262,144-bitCMOSstaticRAMsorganizedas32,768-wordsby8-bitswhichisfabricatedusinghigh-performance3polysiliconCMOStechnology.TheuseofresistiveloadNMOScellsandCMOSperipheryresultsinahighdensityandlowpowerstaticRAM.Stand-bycur

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

M5M5256DFP-70LLIBM

262144-BIT(32768-WORDBY8-BIT)CMOSSTATICRAM

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

M5M5256DFP-70VXL

262144-BIT(32768-WORDBY8-BIT)CMOSSTATICRAM

DESCRIPTION TheM5M5256DFP,VP,RVis262,144-bitCMOSstaticRAMsorganizedas32,768-wordsby8-bitswhichisfabricatedusinghigh-performance3polysiliconCMOStechnology.TheuseofresistiveloadNMOScellsandCMOSperipheryresultsinahighdensityandlowpowerstaticRAM.Stand-bycurre

MitsubishiMitsubishi Electric Semiconductor

三菱電機三菱電機株式會社

M5M5256DFP-70VXL-I

262144-BIT(32768-WORDBY8-BIT)CMOSSTATICRAM

DESCRIPTION TheM5M5256DFP,VP,RVis262,144-bitCMOSstaticRAMsorganizedas32,768-wordsby8-bitswhichisfabricatedusinghigh-performance3polysiliconCMOStechnology.TheuseofresistiveloadNMOScellsandCMOSperipheryresultsinahighdensityandlowpowerstaticRAM.Stand-bycurre

MitsubishiMitsubishi Electric Semiconductor

三菱電機三菱電機株式會社

M5M5256DFP-70XG

262144-BIT(32768-WORDBY8-BIT)CMOSSTATICRAM

DESCRIPTION TheM5M5256DFP,VPis262,144-bitCMOSstaticRAMsorganizedas32,768-wordsby8-bitswhichisfabricatedusinghigh-performance3polysiliconCMOStechnology.TheuseofresistiveloadNMOScellsandCMOSperipheryresultsinahighdensityandlowpowerstaticRAM.Stand-bycur

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

M5M5256DFP-70XL

262144-BIT(32768-WORDBY8-BIT)CMOSSTATICRAM

DESCRIPTION TheM5M5256DFP,VPis262,144-bitCMOSstaticRAMsorganizedas32,768-wordsby8-bitswhichisfabricatedusinghigh-performance3polysiliconCMOStechnology.TheuseofresistiveloadNMOScellsandCMOSperipheryresultsinahighdensityandlowpowerstaticRAM.Stand-bycur

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

M5M5256DFP-70XL

262144-BIT(32768-WORDBY8-BIT)CMOSSTATICRAM

DESCRIPTION TheM5M5256DP,FP,VP,RVis262,144-bitCMOSstaticRAMsorganizedas32,768-wordsby8-bitswhichisfabricatedusinghigh-performance3polysiliconCMOStechnology.TheuseofresistiveloadNMOScellsandCMOSperipheryresultsinahighdensityandlowpowerstaticRAM.Stand-bycur

MitsubishiMitsubishi Electric Semiconductor

三菱電機三菱電機株式會社

詳細參數(shù)

  • 型號:

    M5M5256DFP-70VLL

  • 制造商:

    MITSUBISHI

  • 制造商全稱:

    Mitsubishi Electric Semiconductor

  • 功能描述:

    262144-BIT(32768-WORD BY 8-BIT) CMOS STATIC RAM

供應商型號品牌批號封裝庫存備注價格
24+
3000
公司存貨
詢價
MITSUBISHI
24+
SOP-28
4650
詢價
MITSUBISHI
23+
NA
25060
只做進口原裝,終端工廠免費送樣
詢價
MIT
21+
SOP-28
5000
原裝現(xiàn)貨/假一賠十/支持第三方檢驗
詢價
MIT
2022
SOP
6000
全新原裝現(xiàn)貨
詢價
MIT
23+
SOP-28
50000
全新原裝正品現(xiàn)貨,支持訂貨
詢價
MIT
2022
SOP-28
80000
原裝現(xiàn)貨,OEM渠道,歡迎咨詢
詢價
MIT
23+
QFP
3200
全新原裝、誠信經(jīng)營、公司現(xiàn)貨銷售!
詢價
M5M5256DFP-70VLL
200
200
詢價
MIT有批量
SOP-28
68900
原包原標簽100%進口原裝常備現(xiàn)貨!
詢價
更多M5M5256DFP-70VLL供應商 更新時間2025-1-14 16:00:00