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M5M5256RV

262144-BIT (32768-WORD BY 8-BIT) CMOS STATIC RAM???

MitsubishiMitsubishi Electric Semiconductor

三菱電機三菱電機半導體(Mitsubishi Electric Semiconductor)

M5M5256RV

262144-BIT (32768-WORD BY 8-BIT) CMOS STATIC RAM???

MitsubishiMitsubishi Electric Semiconductor

三菱電機三菱電機半導體(Mitsubishi Electric Semiconductor)

M5M5256RV-45LL-I

262144-BIT (32768-WORD BY 8-BIT) CMOS STATIC RAM

DESCRIPTION TheM5M5256DP,KP,FP,VP,RVis262,144-bitCMOSstaticRAMsorganizedas32,768-wordsby8-bitswhichisfabricatedusinghigh-performance3polysiliconCMOStechnology.TheuseofresistiveloadNMOScellsandCMOSperipheryresultsinahighdensityandlowpowerstaticRAM.Stand-by

MitsubishiMitsubishi Electric Semiconductor

三菱電機三菱電機半導體(Mitsubishi Electric Semiconductor)

M5M5256RV-45LL-W

262144-BIT (32768-WORD BY 8-BIT) CMOS STATIC RAM

DESCRIPTION TheM5M5256DP,KP,FP,VP,RVis262,144-bitCMOSstaticRAMsorganizedas32,768-wordsby8-bitswhichisfabricatedusinghigh-performance3polysiliconCMOStechnology.TheuseofresistiveloadNMOScellsandCMOSperipheryresultsinahighdensityandlowpowerstaticRAM.Stand-by

MitsubishiMitsubishi Electric Semiconductor

三菱電機三菱電機半導體(Mitsubishi Electric Semiconductor)

M5M5256RV-45XL-I

262144-BIT (32768-WORD BY 8-BIT) CMOS STATIC RAM

DESCRIPTION TheM5M5256DP,KP,FP,VP,RVis262,144-bitCMOSstaticRAMsorganizedas32,768-wordsby8-bitswhichisfabricatedusinghigh-performance3polysiliconCMOStechnology.TheuseofresistiveloadNMOScellsandCMOSperipheryresultsinahighdensityandlowpowerstaticRAM.Stand-by

MitsubishiMitsubishi Electric Semiconductor

三菱電機三菱電機半導體(Mitsubishi Electric Semiconductor)

M5M5256RV-45XL-W

262144-BIT (32768-WORD BY 8-BIT) CMOS STATIC RAM

DESCRIPTION TheM5M5256DP,KP,FP,VP,RVis262,144-bitCMOSstaticRAMsorganizedas32,768-wordsby8-bitswhichisfabricatedusinghigh-performance3polysiliconCMOStechnology.TheuseofresistiveloadNMOScellsandCMOSperipheryresultsinahighdensityandlowpowerstaticRAM.Stand-by

MitsubishiMitsubishi Electric Semiconductor

三菱電機三菱電機半導體(Mitsubishi Electric Semiconductor)

M5M5256RV-55LL-I

262144-BIT (32768-WORD BY 8-BIT) CMOS STATIC RAM

DESCRIPTION TheM5M5256DP,KP,FP,VP,RVis262,144-bitCMOSstaticRAMsorganizedas32,768-wordsby8-bitswhichisfabricatedusinghigh-performance3polysiliconCMOStechnology.TheuseofresistiveloadNMOScellsandCMOSperipheryresultsinahighdensityandlowpowerstaticRAM.Stand-by

MitsubishiMitsubishi Electric Semiconductor

三菱電機三菱電機半導體(Mitsubishi Electric Semiconductor)

M5M5256RV-55LL-W

262144-BIT (32768-WORD BY 8-BIT) CMOS STATIC RAM

DESCRIPTION TheM5M5256DP,KP,FP,VP,RVis262,144-bitCMOSstaticRAMsorganizedas32,768-wordsby8-bitswhichisfabricatedusinghigh-performance3polysiliconCMOStechnology.TheuseofresistiveloadNMOScellsandCMOSperipheryresultsinahighdensityandlowpowerstaticRAM.Stand-by

MitsubishiMitsubishi Electric Semiconductor

三菱電機三菱電機半導體(Mitsubishi Electric Semiconductor)

M5M5256RV-55XL-I

262144-BIT (32768-WORD BY 8-BIT) CMOS STATIC RAM

DESCRIPTION TheM5M5256DP,KP,FP,VP,RVis262,144-bitCMOSstaticRAMsorganizedas32,768-wordsby8-bitswhichisfabricatedusinghigh-performance3polysiliconCMOStechnology.TheuseofresistiveloadNMOScellsandCMOSperipheryresultsinahighdensityandlowpowerstaticRAM.Stand-by

MitsubishiMitsubishi Electric Semiconductor

三菱電機三菱電機半導體(Mitsubishi Electric Semiconductor)

M5M5256RV-55XL-W

262144-BIT (32768-WORD BY 8-BIT) CMOS STATIC RAM

DESCRIPTION TheM5M5256DP,KP,FP,VP,RVis262,144-bitCMOSstaticRAMsorganizedas32,768-wordsby8-bitswhichisfabricatedusinghigh-performance3polysiliconCMOStechnology.TheuseofresistiveloadNMOScellsandCMOSperipheryresultsinahighdensityandlowpowerstaticRAM.Stand-by

MitsubishiMitsubishi Electric Semiconductor

三菱電機三菱電機半導體(Mitsubishi Electric Semiconductor)

M5M5256RV-70LL-I

262144-BIT (32768-WORD BY 8-BIT) CMOS STATIC RAM

DESCRIPTION TheM5M5256DP,KP,FP,VP,RVis262,144-bitCMOSstaticRAMsorganizedas32,768-wordsby8-bitswhichisfabricatedusinghigh-performance3polysiliconCMOStechnology.TheuseofresistiveloadNMOScellsandCMOSperipheryresultsinahighdensityandlowpowerstaticRAM.Stand-by

MitsubishiMitsubishi Electric Semiconductor

三菱電機三菱電機半導體(Mitsubishi Electric Semiconductor)

M5M5256RV-70LL-W

262144-BIT (32768-WORD BY 8-BIT) CMOS STATIC RAM

DESCRIPTION TheM5M5256DP,KP,FP,VP,RVis262,144-bitCMOSstaticRAMsorganizedas32,768-wordsby8-bitswhichisfabricatedusinghigh-performance3polysiliconCMOStechnology.TheuseofresistiveloadNMOScellsandCMOSperipheryresultsinahighdensityandlowpowerstaticRAM.Stand-by

MitsubishiMitsubishi Electric Semiconductor

三菱電機三菱電機半導體(Mitsubishi Electric Semiconductor)

M5M5256RV-70XL-I

262144-BIT (32768-WORD BY 8-BIT) CMOS STATIC RAM

DESCRIPTION TheM5M5256DP,KP,FP,VP,RVis262,144-bitCMOSstaticRAMsorganizedas32,768-wordsby8-bitswhichisfabricatedusinghigh-performance3polysiliconCMOStechnology.TheuseofresistiveloadNMOScellsandCMOSperipheryresultsinahighdensityandlowpowerstaticRAM.Stand-by

MitsubishiMitsubishi Electric Semiconductor

三菱電機三菱電機半導體(Mitsubishi Electric Semiconductor)

M5M5256RV-70XL-W

262144-BIT (32768-WORD BY 8-BIT) CMOS STATIC RAM

DESCRIPTION TheM5M5256DP,KP,FP,VP,RVis262,144-bitCMOSstaticRAMsorganizedas32,768-wordsby8-bitswhichisfabricatedusinghigh-performance3polysiliconCMOStechnology.TheuseofresistiveloadNMOScellsandCMOSperipheryresultsinahighdensityandlowpowerstaticRAM.Stand-by

MitsubishiMitsubishi Electric Semiconductor

三菱電機三菱電機半導體(Mitsubishi Electric Semiconductor)

詳細參數

  • 型號:

    M5M5256RV

  • 制造商:

    MITSUBISHI

  • 制造商全稱:

    Mitsubishi Electric Semiconductor

  • 功能描述:

    262144-BIT(32768-WORD BY 8-BIT) CMOS STATIC RAM

供應商型號品牌批號封裝庫存備注價格
MITSUBISHI
23+
NA
25060
只做進口原裝,終端工廠免費送樣
詢價
22+
TSOP28
3629
原裝優(yōu)勢!房間現貨!歡迎來電!
詢價
MIT
2022
TSOP
6000
全新原裝現貨
詢價
MIT
23+
TSOP
8000
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詢價
更多M5M5256RV供應商 更新時間2024-11-8 9:02:00