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M5M51008DRV

1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM

DESCRIPTION TheM5M51008DP,FP,VP,RV,KVarea1048576-bitCMOSstaticRAMorganizedas131072wordby8-bitwhicharefabricatedusinghigh-performancequadruple-polysiliconanddoublemetalCMOStechnology.Theuseofthinfilmtransistor(TFT)loadcellsandCMOSperipheryresultinahighdensi

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

M5M51008DRV-55H

1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM

DESCRIPTION TheM5M51008DP,FP,VP,RV,KVarea1048576-bitCMOSstaticRAMorganizedas131072wordby8-bitwhicharefabricatedusinghigh-performancequadruple-polysiliconanddoublemetalCMOStechnology.Theuseofthinfilmtransistor(TFT)loadcellsandCMOSperipheryresultinahighdensi

MitsubishiMitsubishi Electric Semiconductor

三菱電機三菱電機半導體(Mitsubishi Electric Semiconductor)

M5M51008DRV-55H

1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM

DESCRIPTION TheM5M51008DP,FP,VP,RV,KVarea1048576-bitCMOSstaticRAMorganizedas131072wordby8-bitwhicharefabricatedusinghigh-performancequadruple-polysiliconanddoublemetalCMOStechnology.Theuseofthinfilmtransistor(TFT)loadcellsandCMOSperipheryresultinahighdensi

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

M5M51008DRV-70H

1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM

DESCRIPTION TheM5M51008DP,FP,VP,RV,KVarea1048576-bitCMOSstaticRAMorganizedas131072wordby8-bitwhicharefabricatedusinghigh-performancequadruple-polysiliconanddoublemetalCMOStechnology.Theuseofthinfilmtransistor(TFT)loadcellsandCMOSperipheryresultinahighdensi

MitsubishiMitsubishi Electric Semiconductor

三菱電機三菱電機半導體(Mitsubishi Electric Semiconductor)

M5M51008DRV-70H

1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM

DESCRIPTION TheM5M51008DP,FP,VP,RV,KVarea1048576-bitCMOSstaticRAMorganizedas131072wordby8-bitwhicharefabricatedusinghigh-performancequadruple-polysiliconanddoublemetalCMOStechnology.Theuseofthinfilmtransistor(TFT)loadcellsandCMOSperipheryresultinahighdensi

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

M5M51008BFP

1048576-BIT(131072-WORDBY8-BIT)CMOSSTATICRAM

DESCRIPTION TheM5M51008BFP,VP,RV,KV,KRarea1048576-bitCMOSstaticRAMorganizedas131072wordby8-bitwhichare fabricatedusinghigh-performancetriplepolysiliconCMOStechnology.TheuseofresistiveloadNMOScellsandCMOSperipheryresultinahighdensityandlowpowerstaticRAM.T

MitsubishiMitsubishi Electric Semiconductor

三菱電機三菱電機半導體(Mitsubishi Electric Semiconductor)

M5M51008CFP

1048576-BIT(131072-WORDBY8-BIT)CMOSSTATICRAM

DESCRIPTION TheM5M51008CP,FP,VP,RV,KV,KRarea1048576-bitCMOSstaticRAMorganizedas131072wordby8-bitwhicharefabricatedusinghigh-performancequadruple-polysiliconanddoublemetalCMOStechnology.Theuseofthinfilmtransistor(TFT)loadcellsandCMOSperipheryresultinahighde

MitsubishiMitsubishi Electric Semiconductor

三菱電機三菱電機半導體(Mitsubishi Electric Semiconductor)

M5M51008CKV

1048576-BIT(131072-WORDBY8-BIT)CMOSSTATICRAM

DESCRIPTION TheM5M51008CP,FP,VP,RV,KV,KRarea1048576-bitCMOSstaticRAMorganizedas131072wordby8-bitwhicharefabricatedusinghigh-performancequadruple-polysiliconanddoublemetalCMOStechnology.Theuseofthinfilmtransistor(TFT)loadcellsandCMOSperipheryresultinahighde

MitsubishiMitsubishi Electric Semiconductor

三菱電機三菱電機半導體(Mitsubishi Electric Semiconductor)

M5M51008CP

1048576-BIT(131072-WORDBY8-BIT)CMOSSTATICRAM

DESCRIPTION TheM5M51008CP,FP,VP,RV,KV,KRarea1048576-bitCMOSstaticRAMorganizedas131072wordby8-bitwhicharefabricatedusinghigh-performancequadruple-polysiliconanddoublemetalCMOStechnology.Theuseofthinfilmtransistor(TFT)loadcellsandCMOSperipheryresultinahighde

MitsubishiMitsubishi Electric Semiconductor

三菱電機三菱電機半導體(Mitsubishi Electric Semiconductor)

M5M51008CRV

1048576-BIT(131072-WORDBY8-BIT)CMOSSTATICRAM

DESCRIPTION TheM5M51008CP,FP,VP,RV,KV,KRarea1048576-bitCMOSstaticRAMorganizedas131072wordby8-bitwhicharefabricatedusinghigh-performancequadruple-polysiliconanddoublemetalCMOStechnology.Theuseofthinfilmtransistor(TFT)loadcellsandCMOSperipheryresultinahighde

MitsubishiMitsubishi Electric Semiconductor

三菱電機三菱電機半導體(Mitsubishi Electric Semiconductor)

M5M51008CVP

1048576-BIT(131072-WORDBY8-BIT)CMOSSTATICRAM

DESCRIPTION TheM5M51008CP,FP,VP,RV,KV,KRarea1048576-bitCMOSstaticRAMorganizedas131072wordby8-bitwhicharefabricatedusinghigh-performancequadruple-polysiliconanddoublemetalCMOStechnology.Theuseofthinfilmtransistor(TFT)loadcellsandCMOSperipheryresultinahighde

MitsubishiMitsubishi Electric Semiconductor

三菱電機三菱電機半導體(Mitsubishi Electric Semiconductor)

M5M51008DFP

1048576-BIT(131072-WORDBY8-BIT)CMOSSTATICRAM

DESCRIPTION TheM5M51008DP,FP,VP,RV,KVarea1048576-bitCMOSstaticRAMorganizedas131072wordby8-bitwhicharefabricatedusinghigh-performancequadruple-polysiliconanddoublemetalCMOStechnology.Theuseofthinfilmtransistor(TFT)loadcellsandCMOSperipheryresultinahighdensi

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

M5M51008DFP

1048576-BIT(131072-WORDBY8-BIT)CMOSSTATICRAM

DESCRIPTION TheM5M51008DP,FP,VP,RV,KVarea1048576-bitCMOSstaticRAMorganizedas131072wordby8-bitwhicharefabricatedusinghigh-performancequadruple-polysiliconanddoublemetalCMOStechnology.Theuseofthinfilmtransistor(TFT)loadcellsandCMOSperipheryresultinahighdensi

MitsubishiMitsubishi Electric Semiconductor

三菱電機三菱電機半導體(Mitsubishi Electric Semiconductor)

M5M51008DKR

1048576-BIT(131072-WORDBY8-BIT)CMOSSTATICRAM

DESCRIPTION TheM5M51008DP,FP,VP,RV,KVarea1048576-bitCMOSstaticRAMorganizedas131072wordby8-bitwhicharefabricatedusinghigh-performancequadruple-polysiliconanddoublemetalCMOStechnology.Theuseofthinfilmtransistor(TFT)loadcellsandCMOSperipheryresultinahighdensi

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

M5M51008DKV

1048576-BIT(131072-WORDBY8-BIT)CMOSSTATICRAM

DESCRIPTION TheM5M51008DP,FP,VP,RV,KVarea1048576-bitCMOSstaticRAMorganizedas131072wordby8-bitwhicharefabricatedusinghigh-performancequadruple-polysiliconanddoublemetalCMOStechnology.Theuseofthinfilmtransistor(TFT)loadcellsandCMOSperipheryresultinahighdensi

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

M5M51008DVP

1048576-BIT(131072-WORDBY8-BIT)CMOSSTATICRAM

DESCRIPTION TheM5M51008DP,FP,VP,RV,KVarea1048576-bitCMOSstaticRAMorganizedas131072wordby8-bitwhicharefabricatedusinghigh-performancequadruple-polysiliconanddoublemetalCMOStechnology.Theuseofthinfilmtransistor(TFT)loadcellsandCMOSperipheryresultinahighdensi

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

詳細參數(shù)

  • 型號:

    M5M51008DRV

  • 制造商:

    RENESAS

  • 制造商全稱:

    Renesas Technology Corp

  • 功能描述:

    1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM

供應(yīng)商型號品牌批號封裝庫存備注價格
MITSUBISHI
23+
NA
25060
只做進口原裝,終端工廠免費送樣
詢價
24+
3000
公司存貨
詢價
MITSUBISHI
22+
TSSOP-32
4650
詢價
RENESAS
2022
TSOP32
2944
原廠原裝正品,價格超越代理
詢價
M5M
2016+
TSSOP
6528
只做原廠原裝現(xiàn)貨!終端客戶個別型號可以免費送樣品!
詢價
RENESAS
2020+
TSOP32
4033
百分百原裝正品 真實公司現(xiàn)貨庫存 本公司只做原裝 可
詢價
N/A
16+
TSOP
6037
原裝現(xiàn)貨假一罰十
詢價
MIT
TSOP32
00+
110
全新原裝進口自己庫存優(yōu)勢
詢價
RENESAS
TSOP32
9856
只做原裝貨值得信賴
詢價
MIT
17+
TSOP32
9988
只做原裝進口,自己庫存
詢價
更多M5M51008DRV供應(yīng)商 更新時間2024-11-8 9:02:00