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M5M51008CVP

1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM

DESCRIPTION TheM5M51008CP,FP,VP,RV,KV,KRarea1048576-bitCMOSstaticRAMorganizedas131072wordby8-bitwhicharefabricatedusinghigh-performancequadruple-polysiliconanddoublemetalCMOStechnology.Theuseofthinfilmtransistor(TFT)loadcellsandCMOSperipheryresultinahighde

MitsubishiMitsubishi Electric Semiconductor

三菱電機(jī)三菱電機(jī)半導(dǎo)體(Mitsubishi Electric Semiconductor)

M5M51008CVP-55H

1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM

DESCRIPTION TheM5M51008CP,FP,VP,RV,KV,KRarea1048576-bitCMOSstaticRAMorganizedas131072wordby8-bitwhicharefabricatedusinghigh-performancequadruple-polysiliconanddoublemetalCMOStechnology.Theuseofthinfilmtransistor(TFT)loadcellsandCMOSperipheryresultinahighde

MitsubishiMitsubishi Electric Semiconductor

三菱電機(jī)三菱電機(jī)半導(dǎo)體(Mitsubishi Electric Semiconductor)

M5M51008CVP-55X

1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM

DESCRIPTION TheM5M51008CP,FP,VP,RV,KV,KRarea1048576-bitCMOSstaticRAMorganizedas131072wordby8-bitwhicharefabricatedusinghigh-performancequadruple-polysiliconanddoublemetalCMOStechnology.Theuseofthinfilmtransistor(TFT)loadcellsandCMOSperipheryresultinahighde

MitsubishiMitsubishi Electric Semiconductor

三菱電機(jī)三菱電機(jī)半導(dǎo)體(Mitsubishi Electric Semiconductor)

M5M51008CVP-70H

1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM

DESCRIPTION TheM5M51008CP,FP,VP,RV,KV,KRarea1048576-bitCMOSstaticRAMorganizedas131072wordby8-bitwhicharefabricatedusinghigh-performancequadruple-polysiliconanddoublemetalCMOStechnology.Theuseofthinfilmtransistor(TFT)loadcellsandCMOSperipheryresultinahighde

MitsubishiMitsubishi Electric Semiconductor

三菱電機(jī)三菱電機(jī)半導(dǎo)體(Mitsubishi Electric Semiconductor)

M5M51008CVP-70X

1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM

DESCRIPTION TheM5M51008CP,FP,VP,RV,KV,KRarea1048576-bitCMOSstaticRAMorganizedas131072wordby8-bitwhicharefabricatedusinghigh-performancequadruple-polysiliconanddoublemetalCMOStechnology.Theuseofthinfilmtransistor(TFT)loadcellsandCMOSperipheryresultinahighde

MitsubishiMitsubishi Electric Semiconductor

三菱電機(jī)三菱電機(jī)半導(dǎo)體(Mitsubishi Electric Semiconductor)

M5M51008DFP

1048576-BIT(131072-WORDBY8-BIT)CMOSSTATICRAM

DESCRIPTION TheM5M51008DP,FP,VP,RV,KVarea1048576-bitCMOSstaticRAMorganizedas131072wordby8-bitwhicharefabricatedusinghigh-performancequadruple-polysiliconanddoublemetalCMOStechnology.Theuseofthinfilmtransistor(TFT)loadcellsandCMOSperipheryresultinahighdensi

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

M5M51008DFP

1048576-BIT(131072-WORDBY8-BIT)CMOSSTATICRAM

DESCRIPTION TheM5M51008DP,FP,VP,RV,KVarea1048576-bitCMOSstaticRAMorganizedas131072wordby8-bitwhicharefabricatedusinghigh-performancequadruple-polysiliconanddoublemetalCMOStechnology.Theuseofthinfilmtransistor(TFT)loadcellsandCMOSperipheryresultinahighdensi

MitsubishiMitsubishi Electric Semiconductor

三菱電機(jī)三菱電機(jī)半導(dǎo)體(Mitsubishi Electric Semiconductor)

M5M51008DKR

1048576-BIT(131072-WORDBY8-BIT)CMOSSTATICRAM

DESCRIPTION TheM5M51008DP,FP,VP,RV,KVarea1048576-bitCMOSstaticRAMorganizedas131072wordby8-bitwhicharefabricatedusinghigh-performancequadruple-polysiliconanddoublemetalCMOStechnology.Theuseofthinfilmtransistor(TFT)loadcellsandCMOSperipheryresultinahighdensi

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

M5M51008DKV

1048576-BIT(131072-WORDBY8-BIT)CMOSSTATICRAM

DESCRIPTION TheM5M51008DP,FP,VP,RV,KVarea1048576-bitCMOSstaticRAMorganizedas131072wordby8-bitwhicharefabricatedusinghigh-performancequadruple-polysiliconanddoublemetalCMOStechnology.Theuseofthinfilmtransistor(TFT)loadcellsandCMOSperipheryresultinahighdensi

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

M5M51008DRV

1048576-BIT(131072-WORDBY8-BIT)CMOSSTATICRAM

DESCRIPTION TheM5M51008DP,FP,VP,RV,KVarea1048576-bitCMOSstaticRAMorganizedas131072wordby8-bitwhicharefabricatedusinghigh-performancequadruple-polysiliconanddoublemetalCMOStechnology.Theuseofthinfilmtransistor(TFT)loadcellsandCMOSperipheryresultinahighdensi

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

M5M51008DVP

1048576-BIT(131072-WORDBY8-BIT)CMOSSTATICRAM

DESCRIPTION TheM5M51008DP,FP,VP,RV,KVarea1048576-bitCMOSstaticRAMorganizedas131072wordby8-bitwhicharefabricatedusinghigh-performancequadruple-polysiliconanddoublemetalCMOStechnology.Theuseofthinfilmtransistor(TFT)loadcellsandCMOSperipheryresultinahighdensi

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

詳細(xì)參數(shù)

  • 型號:

    M5M51008CVP

  • 制造商:

    MITSUBISHI

  • 制造商全稱:

    Mitsubishi Electric Semiconductor

  • 功能描述:

    1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM

供應(yīng)商型號品牌批號封裝庫存備注價(jià)格
24+
3000
公司存貨
詢價(jià)
N/A
16+
TSOP
13734
原裝現(xiàn)貨假一罰十
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MITSUBISHI
23+
NA
25060
只做進(jìn)口原裝,終端工廠免費(fèi)送樣
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2022
TSOP
5280
原廠原裝正品,價(jià)格超越代理
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MITSUBISHI
05+
原廠原裝
4305
只做全新原裝真實(shí)現(xiàn)貨供應(yīng)
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MIT
2016+
TSSOP32
3900
只做原裝,假一罰十,公司可開17%增值稅發(fā)票!
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MITSUBISHI
22+
TSSOP-32
4650
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MIT
00+
TSOP-32
844
原裝現(xiàn)貨海量庫存歡迎咨詢
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MIT
23+
TSSOP32
8650
受權(quán)代理!全新原裝現(xiàn)貨特價(jià)熱賣!
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MITSUBISHI
19+
TSOP
32000
原裝正品,現(xiàn)貨特價(jià)
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更多M5M51008CVP供應(yīng)商 更新時(shí)間2024-11-8 14:00:00