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首頁 >M59DR008E>規(guī)格書列表

零件編號	下載訂購	功能描述/絲印	制造商上傳企業(yè)	LOGO
M59DR008E	文件：267.87 Kbytes Page：37 Pages	8 Mbit 512Kb x16, Dual Bank, Page Low Voltage Flash Memory DESCRIPTION TheM59DR008isan8Mbitnon-volatileFlashmemorythatmaybeerasedelectricallyatblocklevelandprogrammedin-systemonaWord-by-Wordbasisusinga1.65Vto2.2VVDDsupplyforthecircuitry.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally	STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團	STMICROELECTRONICS
M59DR008E100N1T	文件：267.87 Kbytes Page：37 Pages	8 Mbit 512Kb x16, Dual Bank, Page Low Voltage Flash Memory DESCRIPTION TheM59DR008isan8Mbitnon-volatileFlashmemorythatmaybeerasedelectricallyatblocklevelandprogrammedin-systemonaWord-by-Wordbasisusinga1.65Vto2.2VVDDsupplyforthecircuitry.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally	STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團	STMICROELECTRONICS
M59DR008E100N6T	文件：267.87 Kbytes Page：37 Pages	8 Mbit 512Kb x16, Dual Bank, Page Low Voltage Flash Memory DESCRIPTION TheM59DR008isan8Mbitnon-volatileFlashmemorythatmaybeerasedelectricallyatblocklevelandprogrammedin-systemonaWord-by-Wordbasisusinga1.65Vto2.2VVDDsupplyforthecircuitry.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally	STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團	STMICROELECTRONICS
M59DR008E100ZB1T	文件：267.87 Kbytes Page：37 Pages	8 Mbit 512Kb x16, Dual Bank, Page Low Voltage Flash Memory DESCRIPTION TheM59DR008isan8Mbitnon-volatileFlashmemorythatmaybeerasedelectricallyatblocklevelandprogrammedin-systemonaWord-by-Wordbasisusinga1.65Vto2.2VVDDsupplyforthecircuitry.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally	STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團	STMICROELECTRONICS
M59DR008E100ZB6T	文件：267.87 Kbytes Page：37 Pages	8 Mbit 512Kb x16, Dual Bank, Page Low Voltage Flash Memory DESCRIPTION TheM59DR008isan8Mbitnon-volatileFlashmemorythatmaybeerasedelectricallyatblocklevelandprogrammedin-systemonaWord-by-Wordbasisusinga1.65Vto2.2VVDDsupplyforthecircuitry.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally	STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團	STMICROELECTRONICS
M59DR008E120N1T	文件：267.87 Kbytes Page：37 Pages	8 Mbit 512Kb x16, Dual Bank, Page Low Voltage Flash Memory DESCRIPTION TheM59DR008isan8Mbitnon-volatileFlashmemorythatmaybeerasedelectricallyatblocklevelandprogrammedin-systemonaWord-by-Wordbasisusinga1.65Vto2.2VVDDsupplyforthecircuitry.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally	STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團	STMICROELECTRONICS
M59DR008E120N6T	文件：267.87 Kbytes Page：37 Pages	8 Mbit 512Kb x16, Dual Bank, Page Low Voltage Flash Memory DESCRIPTION TheM59DR008isan8Mbitnon-volatileFlashmemorythatmaybeerasedelectricallyatblocklevelandprogrammedin-systemonaWord-by-Wordbasisusinga1.65Vto2.2VVDDsupplyforthecircuitry.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally	STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團	STMICROELECTRONICS
M59DR008E120ZB1T	文件：267.87 Kbytes Page：37 Pages	8 Mbit 512Kb x16, Dual Bank, Page Low Voltage Flash Memory DESCRIPTION TheM59DR008isan8Mbitnon-volatileFlashmemorythatmaybeerasedelectricallyatblocklevelandprogrammedin-systemonaWord-by-Wordbasisusinga1.65Vto2.2VVDDsupplyforthecircuitry.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally	STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團	STMICROELECTRONICS
M59DR008E120ZB6T	文件：267.87 Kbytes Page：37 Pages	8 Mbit 512Kb x16, Dual Bank, Page Low Voltage Flash Memory DESCRIPTION TheM59DR008isan8Mbitnon-volatileFlashmemorythatmaybeerasedelectricallyatblocklevelandprogrammedin-systemonaWord-by-Wordbasisusinga1.65Vto2.2VVDDsupplyforthecircuitry.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally	STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團	STMICROELECTRONICS
M59DR008EN	文件：267.87 Kbytes Page：37 Pages	8 Mbit 512Kb x16, Dual Bank, Page Low Voltage Flash Memory DESCRIPTION TheM59DR008isan8Mbitnon-volatileFlashmemorythatmaybeerasedelectricallyatblocklevelandprogrammedin-systemonaWord-by-Wordbasisusinga1.65Vto2.2VVDDsupplyforthecircuitry.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally	STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團	STMICROELECTRONICS

詳細參數(shù)

型號：
M59DR008E
制造商：
STMICROELECTRONICS
制造商全稱：
STMicroelectronics
功能描述：
8 Mbit 512Kb x16, Dual Bank, Page Low Voltage Flash Memory

供應(yīng)商	型號	品牌	批號	封裝	庫存	備注	價格
深圳市富誠威科技有限公司	M59DR008E		24+	SMD	3200	十年品牌!原裝現(xiàn)貨!!!	詢價
深圳市一線半導(dǎo)體有限公司	M59DR008E		24+		3000	公司存貨	詢價
深圳市弘為電子有限公司	M59DR008E	ST	24+	BGA	2211	原裝現(xiàn)貨假一罰十	詢價
深圳市鑫宇楊電子科技有限公司	M59DR008E	ST	2020+	原廠封裝	35000	100%進口原裝正品公司現(xiàn)貨庫存	詢價
深圳市中福國際管理有限公司	M59DR008E	ST	21+	BGA	23480		詢價
深圳市科恒偉業(yè)電子有限公司	M59DR008E120N6T	ST	2016+	SOP	6528	只做進口原裝現(xiàn)貨!假一賠十!	詢價
齊創(chuàng)科技(上海,北京,青島)有限公司	M59DR008E120ZB6	ST	23+	BGA	5000	原裝正品,假一罰十	詢價
深圳市豪邁興電子有限公司	M59DR008E120ZB6	ST	24+	BGA	5632	公司原廠原裝現(xiàn)貨假一罰十!特價出售!強勢庫存!	詢價
深圳市鵬和科技有限公司	M59DR008E120N6T	ST	24+	SOP	5000	只做原裝公司現(xiàn)貨	詢價
深圳市佳鑫美電子科技有限公司	M59DR008E-120ZB6ES	ST	24+	BGA-48	2987	只售原裝自家現(xiàn)貨!誠信經(jīng)營!歡迎來電!	詢價

更多M59DR008E供應(yīng)商更新時間2025-3-21 17:33:00

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