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首頁(yè) >M36DR432BD>規(guī)格書列表

零件編號(hào)	下載&訂購(gòu)	功能描述	制造商&上傳企業(yè)	LOGO
M36DR432BD	文件：834.14 Kbytes Page：52 Pages	32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 4 Mbit 256Kb x16 SRAM, Multiple Memory Product SUMMARYDESCRIPTION TheM36DR432AD/BDisalow-voltageMultipleMemoryProductwhichcombinestwomemorydevices:a32Mbit(2Mbitx16)non-volatileFlashmemoryanda4MbitSRAM. ThememoryisavailableinaStackedLFBGA6612x8mm-8x8activeballarray,0.8mmpitchpackageandsuppliedwit	STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體（ST）集團(tuán)	STMICROELECTRONICS
M36DR432BD10ZA6T	文件：834.14 Kbytes Page：52 Pages	32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 4 Mbit 256Kb x16 SRAM, Multiple Memory Product SUMMARYDESCRIPTION TheM36DR432AD/BDisalow-voltageMultipleMemoryProductwhichcombinestwomemorydevices:a32Mbit(2Mbitx16)non-volatileFlashmemoryanda4MbitSRAM. ThememoryisavailableinaStackedLFBGA6612x8mm-8x8activeballarray,0.8mmpitchpackageandsuppliedwit	STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體（ST）集團(tuán)	STMICROELECTRONICS
M36DR432BD12ZA6T	文件：834.14 Kbytes Page：52 Pages	32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 4 Mbit 256Kb x16 SRAM, Multiple Memory Product SUMMARYDESCRIPTION TheM36DR432AD/BDisalow-voltageMultipleMemoryProductwhichcombinestwomemorydevices:a32Mbit(2Mbitx16)non-volatileFlashmemoryanda4MbitSRAM. ThememoryisavailableinaStackedLFBGA6612x8mm-8x8activeballarray,0.8mmpitchpackageandsuppliedwit	STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體（ST）集團(tuán)	STMICROELECTRONICS
M36DR432BD85ZA6T	文件：834.14 Kbytes Page：52 Pages	32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 4 Mbit 256Kb x16 SRAM, Multiple Memory Product SUMMARYDESCRIPTION TheM36DR432AD/BDisalow-voltageMultipleMemoryProductwhichcombinestwomemorydevices:a32Mbit(2Mbitx16)non-volatileFlashmemoryanda4MbitSRAM. ThememoryisavailableinaStackedLFBGA6612x8mm-8x8activeballarray,0.8mmpitchpackageandsuppliedwit	STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體（ST）集團(tuán)	STMICROELECTRONICS
M36DR432BDZA	文件：834.14 Kbytes Page：52 Pages	32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 4 Mbit 256Kb x16 SRAM, Multiple Memory Product SUMMARYDESCRIPTION TheM36DR432AD/BDisalow-voltageMultipleMemoryProductwhichcombinestwomemorydevices:a32Mbit(2Mbitx16)non-volatileFlashmemoryanda4MbitSRAM. ThememoryisavailableinaStackedLFBGA6612x8mm-8x8activeballarray,0.8mmpitchpackageandsuppliedwit	STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體（ST）集團(tuán)	STMICROELECTRONICS
M36DR432BDZA	文件：834.14 Kbytes Page：52 Pages	32Mbit2Mbx16,DualBank,PageFlashMemoryand4Mbit256Kbx16SRAM,MultipleMemoryProduct SUMMARYDESCRIPTION TheM36DR432AD/BDisalow-voltageMultipleMemoryProductwhichcombinestwomemorydevices:a32Mbit(2Mbitx16)non-volatileFlashmemoryanda4MbitSRAM. ThememoryisavailableinaStackedLFBGA6612x8mm-8x8activeballarray,0.8mmpitchpackageandsuppliedwit	STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體（ST）集團(tuán)	STMICROELECTRONICS
M36DR432BZA	文件：328.77 Kbytes Page：46 Pages	32Mbit2Mbx16,DualBank,PageFlashMemoryand4Mbit256Kx16SRAM,MultipleMemoryProduct DESCRIPTION TheM36DR432isamultichipmemorydevicecontaininga32MbitbootblockFlashmemoryanda4MbitofSRAM.ThedeviceisofferedinaStackedLFBGA66(0.8mmpitch)package. FEATURESSUMMARY ■SUPPLYVOLTAGE –VDDF=VDDS=1.65Vto2.2V –VPPF=12VforFastProgram(opt	STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體（ST）集團(tuán)	STMICROELECTRONICS
M36DR432C	文件：330.36 Kbytes Page：46 Pages	32Mbit2Mbx16,DualBank,PageFlashMemoryand4Mbit256Kx16SRAM,MultipleMemoryProduct DESCRIPTION TheM36DR432isamultichipmemorydevicecontaininga32MbitbootblockFlashmemoryanda4MbitofSRAM.ThedeviceisofferedinaStackedLFBGA66(0.8mmpitch)package. Thetwocomponentsaredistinguishedbyusewiththreechipenableinputs:EFfortheFlashmemoryand,E1S	STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體（ST）集團(tuán)	STMICROELECTRONICS
M36DR432CZA	文件：330.36 Kbytes Page：46 Pages	32Mbit2Mbx16,DualBank,PageFlashMemoryand4Mbit256Kx16SRAM,MultipleMemoryProduct DESCRIPTION TheM36DR432isamultichipmemorydevicecontaininga32MbitbootblockFlashmemoryanda4MbitofSRAM.ThedeviceisofferedinaStackedLFBGA66(0.8mmpitch)package. Thetwocomponentsaredistinguishedbyusewiththreechipenableinputs:EFfortheFlashmemoryand,E1S	STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體（ST）集團(tuán)	STMICROELECTRONICS
M36DR432D	文件：330.36 Kbytes Page：46 Pages	32Mbit2Mbx16,DualBank,PageFlashMemoryand4Mbit256Kx16SRAM,MultipleMemoryProduct DESCRIPTION TheM36DR432isamultichipmemorydevicecontaininga32MbitbootblockFlashmemoryanda4MbitofSRAM.ThedeviceisofferedinaStackedLFBGA66(0.8mmpitch)package. Thetwocomponentsaredistinguishedbyusewiththreechipenableinputs:EFfortheFlashmemoryand,E1S	STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體（ST）集團(tuán)	STMICROELECTRONICS
M36DR432DZA	文件：330.36 Kbytes Page：46 Pages	32Mbit2Mbx16,DualBank,PageFlashMemoryand4Mbit256Kx16SRAM,MultipleMemoryProduct DESCRIPTION TheM36DR432isamultichipmemorydevicecontaininga32MbitbootblockFlashmemoryanda4MbitofSRAM.ThedeviceisofferedinaStackedLFBGA66(0.8mmpitch)package. Thetwocomponentsaredistinguishedbyusewiththreechipenableinputs:EFfortheFlashmemoryand,E1S	STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體（ST）集團(tuán)	STMICROELECTRONICS
M36DR432-ZAT	文件：328.77 Kbytes Page：46 Pages	32Mbit2Mbx16,DualBank,PageFlashMemoryand4Mbit256Kx16SRAM,MultipleMemoryProduct DESCRIPTION TheM36DR432isamultichipmemorydevicecontaininga32MbitbootblockFlashmemoryanda4MbitofSRAM.ThedeviceisofferedinaStackedLFBGA66(0.8mmpitch)package. FEATURESSUMMARY ■SUPPLYVOLTAGE –VDDF=VDDS=1.65Vto2.2V –VPPF=12VforFastProgram(opt	STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體（ST）集團(tuán)	STMICROELECTRONICS
M36DR432-ZAT	文件：330.36 Kbytes Page：46 Pages	32Mbit2Mbx16,DualBank,PageFlashMemoryand4Mbit256Kx16SRAM,MultipleMemoryProduct DESCRIPTION TheM36DR432isamultichipmemorydevicecontaininga32MbitbootblockFlashmemoryanda4MbitofSRAM.ThedeviceisofferedinaStackedLFBGA66(0.8mmpitch)package. Thetwocomponentsaredistinguishedbyusewiththreechipenableinputs:EFfortheFlashmemoryand,E1S	STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體（ST）集團(tuán)	STMICROELECTRONICS

詳細(xì)參數(shù)

型號(hào)：
M36DR432BD
制造商：
STMICROELECTRONICS
制造商全稱：
STMicroelectronics
功能描述：
32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 4 Mbit 256Kb x16 SRAM, Multiple Memory Product

供應(yīng)商	型號(hào)	品牌	批號(hào)	封裝	庫(kù)存	備注	價(jià)格
深圳市華斯頓科技有限公司	M36DR432BD10ZA6	STM	22+23+	BGA	29270	絕對(duì)原裝正品全新進(jìn)口深圳現(xiàn)貨	詢價(jià)
貿(mào)澤芯城（深圳）電子科技有限公司	M36DR432BD10ZA6	ST/意法	23+	BGA	3000	一級(jí)代理原廠VIP渠道,專注軍工、汽車、醫(yī)療、工業(yè)、	詢價(jià)
中科航電（深圳）電子集團(tuán)有限公司	M36DR432BD10ZA6	ST		BGA	93480	集團(tuán)化配單-有更多數(shù)量-免費(fèi)送樣-原包裝正品現(xiàn)貨-正規(guī)	詢價(jià)
深圳市佳鑫美電子科技有限公司	M36DR864CB85ZA	STM	22+	BGA	2568	原裝優(yōu)勢(shì)!絕對(duì)公司現(xiàn)貨	詢價(jià)
深圳市振芯物聯(lián)科技有限公司	M36DR864CB85ZA	ST	22+	BGA	32350	原裝正品假一罰十公司現(xiàn)貨	詢價(jià)
深圳市鵬錦翔科技有限公司	M36DR864CB85ZA	ST	20+	BGA	25000	全新原裝現(xiàn)貨假一賠十	詢價(jià)
深圳市君億電子科技有限公司	M36DR864CB85ZA	ST	22+	BGA	8700	原裝現(xiàn)貨	詢價(jià)
深圳市威雅利發(fā)展有限公司	M36DR864CB85ZA	ST	0341+	BGA	1800	一級(jí)代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力	詢價(jià)
深圳市遠(yuǎn)進(jìn)半導(dǎo)體有限公司	M36DR864CB85ZA	ST	22	BGA	25000	3月31原裝,微信報(bào)價(jià)	詢價(jià)
深圳市匯萊威科技有限公司	M36DR864CB85ZA	ST			589220	16余年資質(zhì) 絕對(duì)原盒原盤更多數(shù)量	詢價(jià)

更多M36DR432BD供應(yīng)商更新時(shí)間2024-11-19 16:50:00

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