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M36DR432BZA中文資料意法半導(dǎo)體數(shù)據(jù)手冊PDF規(guī)格書

M36DR432BZA
廠商型號

M36DR432BZA

功能描述

32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 4 Mbit 256K x16 SRAM, Multiple Memory Product

文件大小

328.77 Kbytes

頁面數(shù)量

46

生產(chǎn)廠商 STMicroelectronics
企業(yè)簡稱

STMICROELECTRONICS意法半導(dǎo)體

中文名稱

意法半導(dǎo)體(ST)集團(tuán)官網(wǎng)

原廠標(biāo)識
數(shù)據(jù)手冊

下載地址一下載地址二原廠數(shù)據(jù)手冊到原廠下載

更新時(shí)間

2024-11-19 22:59:00

M36DR432BZA規(guī)格書詳情

DESCRIPTION

The M36DR432 is a multichip memory device containing a 32 Mbit boot block Flash memory and a 4 Mbit of SRAM. The device is offered in a Stacked LFBGA66 (0.8 mm pitch) package.

FEATURES SUMMARY

■ SUPPLY VOLTAGE

– VDDF = VDDS =1.65V to 2.2V

– VPPF = 12V for Fast Program (optional)

■ ACCESS TIME: 100,120ns

■ LOW POWER CONSUMPTION

■ ELECTRONIC SIGNATURE

– Manufacturer Code: 20h

– Top Device Code, M36DR432A: 00A0h

– Bottom Device Code, M36DR432B: 00A1h

FLASH MEMORY

■ 32 Mbit (2Mb x16) BOOT BLOCK

– Parameter Blocks (Top or Bottom Location)

■ PROGRAMMING TIME

– 10μs typical

– Double Word Programming Option

■ ASYNCRONOUS PAGE MODE READ

– Page width: 4 Word

– Page Mode Access Time: 35ns

■ DUAL BANK OPERATION

– Read within one Bank while Program or Erase within the other

– No Delay between Read and Write Operations

■ BLOCK PROTECTION ON ALL BLOCKS

– WPF for Block Locking

■ COMMON FLASH INTERFACE

– 64 bit Security Code

SRAM

■ 4 Mbit (256K x 16 bit)

■ LOW VDDS DATA RETENTION: 1V

■ POWER DOWN FEATURES USING TWO CHIP ENABLE INPUTS

供應(yīng)商 型號 品牌 批號 封裝 庫存 備注 價(jià)格
ST/意法
23+
NA/
10450
原裝現(xiàn)貨,當(dāng)天可交貨,原型號開票
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2017+
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28562
只做原裝正品假一賠十!
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ST/意法
23+
BGA
8160
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ST/意法
2022
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80000
原裝現(xiàn)貨,OEM渠道,歡迎咨詢
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ST
2315+
BGA
3886
優(yōu)勢代理渠道,原裝現(xiàn)貨,可全系列訂貨
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STM
2021+
BGA
6581
百分百原裝正品
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ST
589220
16余年資質(zhì) 絕對原盒原盤 更多數(shù)量
詢價(jià)
STM
23+
BGA-67
3200
全新原裝、誠信經(jīng)營、公司現(xiàn)貨銷售!
詢價(jià)
STM
22+
BGA
2568
原裝優(yōu)勢!絕對公司現(xiàn)貨
詢價(jià)
ST
22+
BGA
43167
原裝正品現(xiàn)貨
詢價(jià)