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PSB-3636

SPLITBOBBINHIGHISOLATIONPOWERTRANSFORMERS

PMI

Premier Magnetics, Inc.

PSB-3636D

SPLITBOBBINHIGHISOLATIONPOWERTRANSFORMERS

PMI

Premier Magnetics, Inc.

PST3636NR

ICforCMOSSystemReset

MITSUMIMitsumi Electronics, Corp.

三美三美電機(jī)株式會社

PST3636UR

ICforCMOSSystemReset

MITSUMIMitsumi Electronics, Corp.

三美三美電機(jī)株式會社

PT3636

HighSensitivityUnipolarSwitch

PROLIFICProlific Technology Inc.

旺玖科技旺玖科技股份有限公司

PT3636

3.8V~24Voperation

etc2List of Unclassifed Manufacturers

etc未分類制造商etc2未分類制造商

RMQCBA3636DGBA

36-MbitDDR??IISRAM2-wordBurstArchitecture(2.5CycleReadlatency)

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

RMQCEA3636DGBA

36-MbitDDR?IISRAM2-wordBurstArchitecture(2.5CycleReadlatency)withODT

Description TheRMQCEA3636DGBAisa1,048,576-wordby36-bitandtheRMQCEA3618DGBAisa2,097,152-wordby18-bit synchronousquaddataratestaticRAMfabricatedwithadvancedCMOStechnologyusingfullCMOSsix-transistor memorycell.Itintegratesuniquesynchronousperipheralcircuitryand

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

RMQCHA3636DGBA

36-MbitDDR?IISRAM2-wordBurstArchitecture(2.0CycleReadlatency)

Description TheRMQCHA3636DGBAisa1,048,576-wordby36-bitandtheRMQCHA3618DGBAisa2,097,152-wordby18-bit synchronousquaddataratestaticRAMfabricatedwithadvancedCMOStechnologyusingfullCMOSsix-transistor memorycell.Itintegratesuniquesynchronousperipheralcircuitryand

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

RMQCLA3636DGBA

36-MbitDDR?IISRAM2-wordBurstArchitecture(2.0CycleReadlatency)

Description TheRMQCHA3636DGBAisa1,048,576-wordby36-bitandtheRMQCHA3618DGBAisa2,097,152-wordby18-bit synchronousquaddataratestaticRAMfabricatedwithadvancedCMOStechnologyusingfullCMOSsix-transistor memorycell.Itintegratesuniquesynchronousperipheralcircuitryand

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

RMQSAA3636DGBA

36-MbitQDR?IISRAM4-wordBurstArchitecture(2.5CycleReadlatency)

Description TheRMQSAA3636DGBAisa1,048,576-wordby36-bitandtheRMQSAA3618DGBAisa2,097,152-wordby18-bit synchronousquaddataratestaticRAMfabricatedwithadvancedCMOStechnologyusingfullCMOSsix-transistor memorycell.Itintegratesuniquesynchronousperipheralcircuitryand

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

RMQSDA3636DGBA

36-MbitQDR?IISRAM4-wordBurstArchitecture(2.5CycleReadlatency)withODT

Description TheRMQSDA3636DGBAisa1,048,576-wordby36-bitandtheRMQSDA3618DGBAisa2,097,152-wordby18-bit synchronousquaddataratestaticRAMfabricatedwithadvancedCMOStechnologyusingfullCMOSsix-transistor memorycell.Itintegratesuniquesynchronousperipheralcircuitryand

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

RMQSGA3636DGBA

36-MbitQDR?IISRAM4-wordBurstArchitecture(2.0CycleReadlatency)

Description TheRMQSGA3636DGBAisa1,048,576-wordby36-bitandtheRMQSGA3618DGBAisa2,097,152-wordby18-bit synchronousquaddataratestaticRAMfabricatedwithadvancedCMOStechnologyusingfullCMOSsix-transistor memorycell.Itintegratesuniquesynchronousperipheralcircuitryand

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

RMQSKA3636DGBA

36-MbitQDR?IISRAM4-wordBurstArchitecture(2.0CycleReadlatency)withODT

Features PowerSupply 1.8Vforcore(VDD),1.4VtoVDDforI/O(VDDQ) Clock Fastclockcycletimeforhighbandwidth Twoinputclocks(Kand/K)forpreciseDDRtimingatclockrisingedgesonly Twooutputechoclocks(CQand/CQ)simplifydatacaptureinhigh-speedsystems 

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

TPESD3636P

4=ChannelESDProtectionDiodeforUSBType=CandHDMI2.0

Features Ultralowcapacitance:0.25pFtypical(I/Oto1/0) Ultralowleakage:nAlevel BreakdownVoltage:5.5V(Minimum) Lowclampingvoitage Complieswithfollowingstandards: —|IEC61000-4-2(ESD)immunitytest Airdischarge:+20kV Contactdischarge:+15kV —IEC61000-4-4(EFT)80A(

TECHPUBLICTECH PUBLIC Electronics co LTD

臺舟電子臺舟電子股份有限公司

晶體管資料

  • 型號:

    LY3636A

  • 別名:

    三極管、晶體管、晶體三極管

  • 生產(chǎn)廠家:

  • 制作材料:

  • 性質(zhì):

    射頻/高頻放大 (HF)_功率放大 (PA)

  • 封裝形式:

    直插封裝

  • 極限工作電壓:

    150V

  • 最大電流允許值:

    0.2A

  • 最大工作頻率:

    <1MHZ或未知

  • 引腳數(shù):

    4

  • 可代換的型號:

    GES3636,TR3636,2N3636,

  • 最大耗散功率:

    1W

  • 放大倍數(shù):

  • 圖片代號:

    D-51

  • vtest:

    150

  • htest:

    999900

  • atest:

    0.2

  • wtest:

    1

供應(yīng)商型號品牌批號封裝庫存備注價格
23+
SOP48
20000
原廠原裝正品現(xiàn)貨
詢價
2023+
SOP48
80000
一級代理/分銷渠道價格優(yōu)勢 十年芯程一路只做原裝正品
詢價
24+
SOT23-5
8866666
原裝現(xiàn)貨
詢價
端子
2022+
13000
只做原裝,可提供樣品
詢價
CARRY
01+
QFP
36
原裝現(xiàn)貨海量庫存歡迎咨詢
詢價
OMRON(歐姆龍)
23+
7350
現(xiàn)貨供應(yīng),當(dāng)天可交貨!免費(fèi)送樣,原廠技術(shù)支持!!!
詢價
OMRON
20+
繼電器
396
就找我吧!--邀您體驗(yàn)愉快問購元件!
詢價
OMRON/歐姆龍
2420+
/
137962
一級代理,原裝正品!
詢價
Omron Automation and Safety
2022+
原廠封裝
38550
全新原裝 支持表配單 中國著名電子元器件獨(dú)立分銷
詢價
OMRON(歐姆龍)
23+
6000
誠信服務(wù),絕對原裝原盤
詢價
更多LY3636A供應(yīng)商 更新時間2025-1-11 19:00:00