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LM358W

Low Power Dual Operational Amplifiers

Description Thesecircuitsconsistoftwoindependent,highgain,internallyfrequency-compensatedwhichweredesignedspecificallytooperatefromasinglepowersupplyoverawiderangeofvoltages.Thelowpowersupplydrainisindependentofthemagnitudeofthepowersupplyvoltage. App

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

LM358W

Low power dual operational amplifiers

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

LM358WD

Low Power Dual Operational Amplifiers

Description Thesecircuitsconsistoftwoindependent,highgain,internallyfrequency-compensatedwhichweredesignedspecificallytooperatefromasinglepowersupplyoverawiderangeofvoltages.Thelowpowersupplydrainisindependentofthemagnitudeofthepowersupplyvoltage. App

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

LM358WD

Low power dual operational amplifiers

Description Thesecircuitsconsistoftwoindependent,highgain,internallyfrequency-compensatedwhichweredesignedspecificallytooperatefromasinglepowersupplyoverawiderangeofvoltages.Thelowpowersupplydrainisindependentofthemagnitudeofthepowersupplyvoltage. App

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

LM358WDT

SILICON MONNOLITHIC INTEGRATED CIRCUIT

Description TheUniversalStandardfamilyLM358/324,LM2904/2902monolithicICsintegratetwoindependentop-ampsandphasecompensationcapacitorsonasinglechip andfeaturehigh-gain,lowpowerconsumption,andanoperatingvoltagerangeof3[V]to32[V](singlepowersupply.) Features

ROHMRohm

羅姆羅姆半導(dǎo)體集團(tuán)

LM358WDT

Low power dual operational amplifiers

Description Thesecircuitsconsistoftwoindependent,highgain,internallyfrequency-compensatedwhichweredesignedspecificallytooperatefromasinglepowersupplyoverawiderangeofvoltages.Thelowpowersupplydrainisindependentofthemagnitudeofthepowersupplyvoltage. App

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

LM358WDT

Low Power Dual Operational Amplifiers

Description Thesecircuitsconsistoftwoindependent,highgain,internallyfrequency-compensatedwhichweredesignedspecificallytooperatefromasinglepowersupplyoverawiderangeofvoltages.Thelowpowersupplydrainisindependentofthemagnitudeofthepowersupplyvoltage. App

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

LM358WN

Low Power Dual Operational Amplifiers

Description Thesecircuitsconsistoftwoindependent,highgain,internallyfrequency-compensatedwhichweredesignedspecificallytooperatefromasinglepowersupplyoverawiderangeofvoltages.Thelowpowersupplydrainisindependentofthemagnitudeofthepowersupplyvoltage. App

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

LM358WN

Low power dual operational amplifiers

Description Thesecircuitsconsistoftwoindependent,highgain,internallyfrequency-compensatedwhichweredesignedspecificallytooperatefromasinglepowersupplyoverawiderangeofvoltages.Thelowpowersupplydrainisindependentofthemagnitudeofthepowersupplyvoltage. App

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

LM358WPT

SILICON MONNOLITHIC INTEGRATED CIRCUIT

Description TheUniversalStandardfamilyLM358/324,LM2904/2902monolithicICsintegratetwoindependentop-ampsandphasecompensationcapacitorsonasinglechip andfeaturehigh-gain,lowpowerconsumption,andanoperatingvoltagerangeof3[V]to32[V](singlepowersupply.) Features

ROHMRohm

羅姆羅姆半導(dǎo)體集團(tuán)

詳細(xì)參數(shù)

  • 型號(hào):

    LM358W

  • 制造商:

    STMICROELECTRONICS

  • 制造商全稱:

    STMicroelectronics

  • 功能描述:

    Low Power Dual Operational Amplifiers

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
ST
23+
SO-8
12335
詢價(jià)
ST
24+
SO-8
3200
絕對(duì)原裝自家現(xiàn)貨!真實(shí)庫(kù)存!歡迎來(lái)電!
詢價(jià)
STM原廠目錄
24+
DIP-8;SO-8
96000
全新原裝
詢價(jià)
ST
23+
NA
16900
正規(guī)渠道,只有原裝!
詢價(jià)
ST
23+
SO-8
38000
正品原裝貨價(jià)格低
詢價(jià)
ST/意法
23+
SOP-8
89630
當(dāng)天發(fā)貨全新原裝現(xiàn)貨
詢價(jià)
ST
21+
NA
23480
詢價(jià)
ROHM
23+
8-SOIC
7750
全新原裝優(yōu)勢(shì)
詢價(jià)
STM
24+
SOP-8
192
詢價(jià)
ST
24+
DIP8
5000
全現(xiàn)原裝公司現(xiàn)貨
詢價(jià)
更多LM358W供應(yīng)商 更新時(shí)間2025-4-17 17:14:00