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LM358W

Low Power Dual Operational Amplifiers

Description Thesecircuitsconsistoftwoindependent,highgain,internallyfrequency-compensatedwhichweredesignedspecificallytooperatefromasinglepowersupplyoverawiderangeofvoltages.Thelowpowersupplydrainisindependentofthemagnitudeofthepowersupplyvoltage. App

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

LM358W

Low power dual operational amplifiers

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

LM358WD

Low Power Dual Operational Amplifiers

Description Thesecircuitsconsistoftwoindependent,highgain,internallyfrequency-compensatedwhichweredesignedspecificallytooperatefromasinglepowersupplyoverawiderangeofvoltages.Thelowpowersupplydrainisindependentofthemagnitudeofthepowersupplyvoltage. App

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

LM358WD

Low power dual operational amplifiers

Description Thesecircuitsconsistoftwoindependent,highgain,internallyfrequency-compensatedwhichweredesignedspecificallytooperatefromasinglepowersupplyoverawiderangeofvoltages.Thelowpowersupplydrainisindependentofthemagnitudeofthepowersupplyvoltage. App

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

LM358WDT

SILICON MONNOLITHIC INTEGRATED CIRCUIT

Description TheUniversalStandardfamilyLM358/324,LM2904/2902monolithicICsintegratetwoindependentop-ampsandphasecompensationcapacitorsonasinglechip andfeaturehigh-gain,lowpowerconsumption,andanoperatingvoltagerangeof3[V]to32[V](singlepowersupply.) Features

ROHMRohm

羅姆羅姆半導(dǎo)體集團(tuán)

LM358WDT

Low power dual operational amplifiers

Description Thesecircuitsconsistoftwoindependent,highgain,internallyfrequency-compensatedwhichweredesignedspecificallytooperatefromasinglepowersupplyoverawiderangeofvoltages.Thelowpowersupplydrainisindependentofthemagnitudeofthepowersupplyvoltage. App

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

LM358WDT

Low Power Dual Operational Amplifiers

Description Thesecircuitsconsistoftwoindependent,highgain,internallyfrequency-compensatedwhichweredesignedspecificallytooperatefromasinglepowersupplyoverawiderangeofvoltages.Thelowpowersupplydrainisindependentofthemagnitudeofthepowersupplyvoltage. App

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

LM358WN

Low Power Dual Operational Amplifiers

Description Thesecircuitsconsistoftwoindependent,highgain,internallyfrequency-compensatedwhichweredesignedspecificallytooperatefromasinglepowersupplyoverawiderangeofvoltages.Thelowpowersupplydrainisindependentofthemagnitudeofthepowersupplyvoltage. App

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

LM358WN

Low power dual operational amplifiers

Description Thesecircuitsconsistoftwoindependent,highgain,internallyfrequency-compensatedwhichweredesignedspecificallytooperatefromasinglepowersupplyoverawiderangeofvoltages.Thelowpowersupplydrainisindependentofthemagnitudeofthepowersupplyvoltage. App

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

LM358WPT

SILICON MONNOLITHIC INTEGRATED CIRCUIT

Description TheUniversalStandardfamilyLM358/324,LM2904/2902monolithicICsintegratetwoindependentop-ampsandphasecompensationcapacitorsonasinglechip andfeaturehigh-gain,lowpowerconsumption,andanoperatingvoltagerangeof3[V]to32[V](singlepowersupply.) Features

ROHMRohm

羅姆羅姆半導(dǎo)體集團(tuán)

LM358WYD

Low power dual operational amplifiers

Description Thesecircuitsconsistoftwoindependent,highgain,internallyfrequency-compensatedwhichweredesignedspecificallytooperatefromasinglepowersupplyoverawiderangeofvoltages.Thelowpowersupplydrainisindependentofthemagnitudeofthepowersupplyvoltage. App

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

LM358WYDT

Low power dual operational amplifiers

Description Thesecircuitsconsistoftwoindependent,highgain,internallyfrequency-compensatedwhichweredesignedspecificallytooperatefromasinglepowersupplyoverawiderangeofvoltages.Thelowpowersupplydrainisindependentofthemagnitudeofthepowersupplyvoltage. App

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

LM358WYPT

Low power dual operational amplifiers

Description Thesecircuitsconsistoftwoindependent,highgain,internallyfrequency-compensatedwhichweredesignedspecificallytooperatefromasinglepowersupplyoverawiderangeofvoltages.Thelowpowersupplydrainisindependentofthemagnitudeofthepowersupplyvoltage. App

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

LM358WD

Low power dual operational amplifiers

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

LM358WDR

SIGNATURE SERIES Operational Amplifiers

ROHMRohm

羅姆羅姆半導(dǎo)體集團(tuán)

LM358WDT

Low power dual operational amplifiers

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

LM358WDT

SIGNATURE SERIES Operational Amplifiers

ROHMRohm

羅姆羅姆半導(dǎo)體集團(tuán)

LM358WN

Low power dual operational amplifiers

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

LM358WPR

SIGNATURE SERIES Operational Amplifiers

ROHMRohm

羅姆羅姆半導(dǎo)體集團(tuán)

LM358WPT

SIGNATURE SERIES Operational Amplifiers

ROHMRohm

羅姆羅姆半導(dǎo)體集團(tuán)

詳細(xì)參數(shù)

  • 型號:

    LM358W

  • 制造商:

    STMICROELECTRONICS

  • 制造商全稱:

    STMicroelectronics

  • 功能描述:

    Low Power Dual Operational Amplifiers

供應(yīng)商型號品牌批號封裝庫存備注價格
ST
23+
SO-8
12335
詢價
ST
24+
SO-8
3200
絕對原裝自家現(xiàn)貨!真實庫存!歡迎來電!
詢價
STM原廠目錄
24+
DIP-8;SO-8
96000
全新原裝
詢價
ST
23+
NA
16900
正規(guī)渠道,只有原裝!
詢價
ST
23+
SO-8
38000
正品原裝貨價格低
詢價
ST/意法
23+
SOP-8
89630
當(dāng)天發(fā)貨全新原裝現(xiàn)貨
詢價
ST
22+
NA
16900
支持樣品 原裝現(xiàn)貨 提供技術(shù)支持!
詢價
ROHM
23+
8-SOIC
7750
全新原裝優(yōu)勢
詢價
STM
24+
SOP-8
192
詢價
ST
24+
DIP8
5000
全現(xiàn)原裝公司現(xiàn)貨
詢價
更多LM358W供應(yīng)商 更新時間2025-1-12 9:00:00