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KSMD6N25

250V N-CHANNEL MOSFET

KERSEMI

Kersemi Electronic Co., Ltd.

6N25

FastSwitchingSpeed

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

FDD6N25

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=4.4A@TC=25℃ ·DrainSourceVoltage :VDSS=250V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=1.1Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

FDD6N25

250VN-ChannelMOSFET

Description TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandhig

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

FDD6N25TF

250VN-ChannelMOSFET

Description TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandhig

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

FDD6N25TM

DESIGN/PROCESSCHANGENOTIFICATION

Description SuperFET?IIMOSFETisFairchildSemiconductor?’sfirstgenerationofhighvoltagesuper-junction(SJ)MOSFETfamilythatisutilizingchargebalancetechnologyforoutstandinglowon-resistanceandlowergatechargeperformance.Thisadvancedtechnologyistailoredtominimizeconducti

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

FDD6N25TM

250VN-ChannelMOSFET

Description TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandhig

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

FDU6N25

250VN-ChannelMOSFET

Description TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandhig

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

FDU6N25TU

250VN-ChannelMOSFET

Description TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandhig

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

FQB6N25

250VN-ChannelMOSFET

Features ?5.5A,250V,RDS(on)=1.0?@VGS=10V ?Lowgatecharge(typical6.6nC) ?LowCrss(typical7.5pF) ?Fastswitching ?100avalanchetested ?Improveddv/dtcapability

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

FQD6N25

250VN-ChannelMOSFET

250VN-ChannelMOSFET

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

FQD6N25

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=4.4A@TC=25℃ ·DrainSourceVoltage-VDSS=250V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=1.0Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

FQD6N25TM

N-ChannelQFETMOSFET250V,4.4A,1.0

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

FQI6N25

250VN-ChannelMOSFET

Features ?5.5A,250V,RDS(on)=1.0?@VGS=10V ?Lowgatecharge(typical6.6nC) ?LowCrss(typical7.5pF) ?Fastswitching ?100avalanchetested ?Improveddv/dtcapability

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

FQP6N25

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=5.5A@TC=25℃ ·DrainSourceVoltage-VDSS=250V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=1.0Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

FQP6N25

250Vn-ChannelMOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproductusingFairchildsproprietary,planarstripe,DMOStechnology. Thisadvancetechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstan

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

FQPF6N25

250VN-ChannelMOSFET

250VN-ChannelMOSFET

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

FQU6N25

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=4.4A@TC=25℃ ·DrainSourceVoltage-VDSS=250V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=1.0Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

FQU6N25

250VN-ChannelMOSFET

250VN-ChannelMOSFET

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

KQB6N25

250VN-ChannelMOSFET

KEXINGuangdong Kexin Industrial Co.,Ltd

科信電子廣東科信實業(yè)有限公司

供應商型號品牌批號封裝庫存備注價格
KERSEMI
23+
TO-252
10000
公司只做原裝正品
詢價
KERSEMI
TO-252
22+
6000
十年配單,只做原裝
詢價
KERSEMI
23+
TO-252
6000
原裝正品,支持實單
詢價
KERSEMI
22+
TO-252
25000
只做原裝進口現(xiàn)貨,專注配單
詢價
KERSEMI
24+
TO-252
12300
獨立分銷商 公司只做原裝 誠心經(jīng)營 免費試樣正品保證
詢價
KERSEMI
23+
TO252
13000
原廠授權一級代理,專業(yè)海外優(yōu)勢訂貨,價格優(yōu)勢、品種
詢價
KERSEMI
1822+
TO-252
6852
只做原裝正品假一賠十為客戶做到零風險!!
詢價
更多KSMD6N25供應商 更新時間2025-1-3 14:30:00