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LMC835

LMC835DigitalControlledGraphicEqualizer

NSCNational Semiconductor (TI)

美國國家半導體美國國家半導體公司

LMC835N

LMC835DigitalControlledGraphicEqualizer

NSCNational Semiconductor (TI)

美國國家半導體美國國家半導體公司

LMC835V

LMC835DigitalControlledGraphicEqualizer

NSCNational Semiconductor (TI)

美國國家半導體美國國家半導體公司

LSM835

8AmpSchottkyRectifier

8AmpSchottkyRectifier ●SchottkyBarrierRectifier ●GuardRingProtection ●LowForwardVoltage ●150°CJunctionTemperature ●VRRM35to45Volts ●HighCurrentCapability

MicrosemiMicrosemi Corporation

美高森美美高森美公司

M835

M840CONNECTORHARNESSVEHICLESANDOFF-HIGHWAYMACHINERY

DSEDeep Sea Electronics

深海DSE英國深海電子有限公司

MAX835

Micropower,LatchingVoltageMonitorsinSOT23-5

GeneralDescription TheMAX834/MAX835micropowervoltagemonitorscontaina1.204Vprecisionbandgapreference,comparator,andlatchedoutputina5-pinSOT23package.Usingthelatchedoutputpreventsdeepdischargeofbatteries.TheMAX834hasanopen-drain,n-channeloutputdriver,whilethe

MaximMaxim Integrated Products

美信美信半導體

MAX835

Micropower,LatchingVoltageMonitorsinSOT23-5

MaximMaxim Integrated Products

美信美信半導體

MAX835EUK-T

Micropower,LatchingVoltageMonitorsinSOT23-5

GeneralDescription TheMAX834/MAX835micropowervoltagemonitorscontaina1.204Vprecisionbandgapreference,comparator,andlatchedoutputina5-pinSOT23package.Usingthelatchedoutputpreventsdeepdischargeofbatteries.TheMAX834hasanopen-drain,n-channeloutputdriver,whilethe

MaximMaxim Integrated Products

美信美信半導體

MAX835EUK-T

Micropower,LatchingVoltageMonitorsinSOT23-5

MaximMaxim Integrated Products

美信美信半導體

MBR835

8.0ASCHOTTKYBARRIERRECTIFIER

Features ●SchottkyBarrierChip ●GuardRingDieConstructionfor TransientProtection ●LowPowerLoss,HighEfficiency ●HighSurgeCapability ●HighCurrentCapabilityandLowForward VoltageDrop ●ForUseinLowVoltage,HighFrequency Inverters,FreeWheeling,andPolarity

DIODES

Diodes Incorporated

MBR835

AxialLeadRectifiers

AxialLeadRectifiers ...employingtheSchottkyBarrierprincipleinalargeareametal?to?siliconpowerdiode.State?of?the?artgeometryfeaturesepitaxialconstructionwithoxidepassivationandmetaloverlapcontact.Ideallysuitedforuseasrectifiersinlow?voltage,high?frequencyinvert

ONSEMION Semiconductor

安森美半導體安森美半導體公司

MBR835

SCHOTTKYBARRIERRECTIFIER

VOLTAGERANGE:30-100VCURRENT:8.0A FEATURES ◇Highsurgecapacity. ◇Foruseinlowvoltage,highfrequencyinverters,freewheeling,andpolarityprotectionapplications. ◇Metalsiliconjunction,majoritycarrierconduction. ◇Highcurrentcapacity,lowforwardvoltagedrop. ◇Guard

BILINChangzhou Galaxy Century Microelectronics Co.,Ltd.

銀河微電常州銀河世紀微電子股份有限公司

MBR835

WideTemperatureRangeandHighTjmSchottkyBarrierRectifiers

FEATURES *Metalofsiliconrectifier,majoritycarrierconducton *Guardringfortransientprotection *Lowpowerloss,highefficiency *Highcurrentcapability,lowVF *Highsurgecapacity *Foruseinlowvoltage,highfrequencyinverters,free whelling,andpolarityprotectionapp

SIRECTIFIERSirectifier Semiconductors

矽萊克電子江蘇矽萊克電子科技有限公司

MBR835

HighTjmLowIRRMSchottkyBarrierDiodes

SIRECTIFIERSirectifier Semiconductors

矽萊克電子江蘇矽萊克電子科技有限公司

MBR835

8.0ASCHOTTKYBARRIERRECTIFIER

Features ●SchottkyBarrierChip ●GuardRingDieConstructionfor TransientProtection ●LowPowerLoss,HighEfficiency ●HighSurgeCapability ●HighCurrentCapabilityandLowForward VoltageDrop ●ForUseinLowVoltage,HighFrequency Inverters,FreeWheeling,andPolarity

KERSEMI

Kersemi Electronic Co., Ltd.

MBR835

8.0ASCHOTTKYBARRIERRECTIFIER

Features ●SchottkyBarrierChip ●GuardRingDieConstructionfor TransientProtection ●LowPowerLoss,HighEfficiency ●HighSurgeCapability ●HighCurrentCapabilityandLowForward VoltageDrop ●ForUseinLowVoltage,HighFrequency Inverters,FreeWheeling,andPolarity

KERSEMI

Kersemi Electronic Co., Ltd.

MBR835

SchottkyBarrierRectifiers

VOLTAGERANGE:30-100VCURRENT:8.0A Features ◇Highsurgecapacity. ◇Foruseinlowvoltage,highfrequencyinverters,freewheeling,andpolarityprotectionapplications. ◇Metalsiliconjunction,majoritycarrierconduction. ◇Highcurrentcapacity,lowforwardvoltagedrop. ◇Thepl

LUGUANGShenzhen Luguang Electronic Technology Co., Ltd

魯光電子深圳市魯光電子科技有限公司

MBR835

8.0ASCHOTTKYBARRIERRECTIFIER

Features ●SchottkyBarrierChip ●GuardRingDieConstructionfor TransientProtection ●LowPowerLoss,HighEfficiency ●HighSurgeCapability ●HighCurrentCapabilityandLowForward VoltageDrop ●ForUseinLowVoltage,HighFrequency Inverters,FreeWheeling,andPolarity

KERSEMI

Kersemi Electronic Co., Ltd.

MBR835RL

AxialLeadRectifiers

AxialLeadRectifiers ...employingtheSchottkyBarrierprincipleinalargeareametal?to?siliconpowerdiode.State?of?the?artgeometryfeaturesepitaxialconstructionwithoxidepassivationandmetaloverlapcontact.Ideallysuitedforuseasrectifiersinlow?voltage,high?frequencyinvert

ONSEMION Semiconductor

安森美半導體安森美半導體公司

MBRB835

SCHOTTKYBARRIERRECTIFIER

VOLTAGERANGE:30-100VCURRENT:8.0A FEATURES ◇Highsurgecapacity. ◇Foruseinlowvoltage,highfrequencyinverters,free wheeling,andpolarityprotectionapplications. ◇Metalsiliconjunction,majoritycarrierconduction. ◇Highcurrentcapacity,lowforwardvoltagedrop. ◇Gu

BILINChangzhou Galaxy Century Microelectronics Co.,Ltd.

銀河微電常州銀河世紀微電子股份有限公司

供應商型號品牌批號封裝庫存備注價格
KINGBRIG
2339+
NA
5825
公司原廠原裝現(xiàn)貨假一罰十!特價出售!強勢庫存!
 詢價
KINGBRIG
23+
13000
原廠授權(quán)一級代理,專業(yè)海外優(yōu)勢訂貨,價格優(yōu)勢、品種
 詢價
KINGBRIGHT
23+
NA
19960
只做進口原裝,終端工廠免費送樣
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KGB
6000
面議
19
DIP/SMD
 詢價
KINGBRIGHT
24+
ROHS
68900
一站配齊 原盒原包現(xiàn)貨 朱S Q2355605126
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更多KB835B-B供應商 更新時間2025-1-10 17:22:00

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