首頁(yè)>K4G41325FE>規(guī)格書(shū)詳情

K4G41325FE中文資料三星數(shù)據(jù)手冊(cè)PDF規(guī)格書(shū)

K4G41325FE
廠商型號(hào)

K4G41325FE

功能描述

4Gb GDDR5 SGRAM E-die 8M x 32Bit x 16 Banks Graphic Double Data Rate 5 Synchronous DRAM (170Ball FBGA)

文件大小

1.97233 Mbytes

頁(yè)面數(shù)量

120 頁(yè)

生產(chǎn)廠商 Samsung semiconductor
企業(yè)簡(jiǎn)稱

Samsung三星

中文名稱

三星半導(dǎo)體官網(wǎng)

原廠標(biāo)識(shí)
數(shù)據(jù)手冊(cè)

下載地址一下載地址二到原廠下載

更新時(shí)間

2025-3-1 23:00:00

人工找貨

K4G41325FE價(jià)格和庫(kù)存,歡迎聯(lián)系客服免費(fèi)人工找貨

K4G41325FE規(guī)格書(shū)詳情

1. FEATURES

? 1.5V + 0.045V power supply for device operations(VDD)

(Specific parts support 1.35V + 0.0405V)

? 1.5V + 0.045V power supply for I/O interface(VDDQ)

(Specific parts support 1.35V + 0.0405V)

? Maximum CK/CK up to 2.25GHz

? Maximum WCK/WCK up to 4.5GHz

? Maximum data rate up to 9.0Gbps/pin

? Halogen free 170 Ball FBGA(RoHS Compliant)

? Single ended interface for data, address and command

? Quarter data-rate differential clock inputs CK/CK for ADD/CMD

? Two half data-rate differential clock inputs WCK/WCK,

each associated with two data bytes(DQ, DBI, EDC)

? Double Data Rate (DDR) data (WCK)

? Single data rate (SDR) command (CK)

? Double data rate (DDR) addressing (CK)

? 16 internal banks for concurrent operation

? 4 bank groups for tCCDL 3 tCK and 4 tCK

? 8n prefetch architecture: 256bit per array read or write access

? Burst length: 8 only

? Programmable CAS latency:

? Programmable write latency :

? WRITE Data mask function via address bus

(single/double byte mask)

? Data bus inversion(DBI) and address bus inversion(ABI)

? Input/output PLL on/off mode

? Address training: Address input monitoring by DQ pins

? WCK2CK clock training with phase information by EDC pins

? Data read and write training via READ FIFO

? READ FIFO pattern preload by LDFF command

? Direct write data load to READ FIFO by WRTR command

? Consecutive read of READ FIFO by RDTR command

? Read/Write data transmission integrity secured by cyclic

redundancy check ; CRC-8(X8+X2+X+1) for EDC

? Read/write EDC on/off mode

? Programmable EDC hold pattern for CDR

? Programmable CRC read latency(CRCRL) range 0 to 3 tCK

? Programmable CRC write latency(CRCWL) range 7 to 14 tCK

? Low Power modes

? RDQS mode on EDC pin

? Auto & self refresh modes

? Auto precharge option for each burst access

? 32ms, auto refresh (16K cycles)

? On-die termination (ODT)

; Nominal values of 60ohm and 120ohm

? Pseudo open drain(POD-15) compatible inputs and outputs

; 40ohm pull down, 60ohm pull up

? ODT and output driver strength auto-calibration with external

resistor ZQ pin(120ohm)

? Programmable termination and driver strength offsets

? Output driver strength adjustment by MRS

? Selectable external or internal VREF for data inputs

;Programmable offsets for internal VREF

? Separate external VREF for address / command inputsdmd

? Vendor ID, FIFO depth and Density info fields for identification

? X32/X16 mode configuration set at power-up with EDC pin

? 16bits support for vendor ID/Density/FIFO depth MRS

? Mirror function with MF pin

? Boundary scan function with SEN pin

供應(yīng)商 型號(hào) 品牌 批號(hào) 封裝 庫(kù)存 備注 價(jià)格
SAMSUNG(三星)
23+
NA/
8735
原廠直銷,現(xiàn)貨供應(yīng),賬期支持!
詢價(jià)
N/A
/
BGA
4
一級(jí)代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力
詢價(jià)
SAMSUNG
22+23+
BGA
78502
絕對(duì)原裝正品現(xiàn)貨,全新深圳原裝進(jìn)口現(xiàn)貨
詢價(jià)
SAMSUNG(三星)
23+
NA
20094
正納10年以上分銷經(jīng)驗(yàn)原裝進(jìn)口正品做服務(wù)做口碑有支持
詢價(jià)
SAMSUNG
16+
BGA
4
原裝
詢價(jià)
SAMSUNG/三星
18+
FBGA
4000
正規(guī)渠道原裝正品
詢價(jià)
SAMSUNG
589220
16余年資質(zhì) 絕對(duì)原盒原盤(pán) 更多數(shù)量
詢價(jià)
SAMSUNG/三星
22+
BGA
9000
原裝正品
詢價(jià)
SAMSUNG/三星
22+
BGA
20000
原裝正品現(xiàn)貨
詢價(jià)
SAMAUNG
23+
IC
5864
原裝原標(biāo)原盒 給價(jià)就出 全網(wǎng)最低
詢價(jià)