K4G323222M-QCSLASHL60中文資料三星數(shù)據(jù)手冊(cè)PDF規(guī)格書

FEATURES

? 3.3V power supply

? LVTTL compatible with multiplexed address

? Dual bank operation

? MRS cycle with address key programs

-. CAS Latency (2, 3)

-. Burst Length (1, 2, 4, 8 & full page)

-. Burst Type (Sequential & Interleave)

? All inputs are sampled at the positive going edge of the

system clock

? Burst Read Single-bit Write operation

? DQM 0-3 for byte masking

? Auto & self refresh

? 32ms refresh period (2K cycle)

? 100 Pin PQFP, TQFP (14 x 20 mm)

Graphics Features

? SMRS cycle.

-. Load mask register

-. Load color register

? Write Per Bit(Old Mask)

? Block Write(8 Columns)

GENERAL DESCRIPTION

The K4G323222M is 33,554,432 bits synchronous high data

rate Dynamic RAM organized as 2 x 524,288 words by 32 bits,

fabricated with SAMSUNG￠s high performance CMOS technology.

Synchronous design allows precise cycle control with the

use of system clock. I/O transactions are possible on every

clock cycle. Range of operating frequencies, programmable

burst length, and programmable latencies allows the same

device to be useful for a variety of high bandwidth, high performance

memory system applications.

Write per bit and 8 columns block write improves performance in

graphics systems.