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K3113

SWITCHING N-CHANNEL POWER MOSFET

DESCRIPTION The2SK3113isN-channelDMOSFETdevicethatfeaturesalowgatechargeandexcellentswitchingcharacteristic,anddesignedforhighvoltageapplicationssuchasswitchingpowersupply,ACadapter. FEATURES ?Lowon-stateresistance RDS(on)=4.4?MAX.(VGS=10V,ID=1.0

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會社

K3113B

MOS FIELD EFFECT TRANSISTOR

DESCRIPTION The2SK3113BisN-channelMOSFETdevicethatfeaturesalowgatechargeandexcellentswitchingcharacteristics,anddesignedforhighvoltageapplicationssuchasswitchingpowersupply,ACadapter. FEATURES ?Lowon-stateresistance RDS(on)=4.4ΩMAX.(VGS=10V,ID=1.0A)

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會社

K3113B-ZK-E1-AY

N-Channel 650 V (D-S) MOSFET

FEATURES ?LowGateChargeQgResultsinSimpleDrive Requirement ?ImprovedGate,AvalancheandDynamicdV/dt Ruggedness ?FullyCharacterizedCapacitanceandAvalancheVoltage andCurrent ?ComplianttoRoHSdirective2002/95/EC

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體（臺灣）有限公司

K3113-Z

Power MOSFET

FEATURES ?LowGateChargeQgResultsinSimpleDrive Requirement ?ImprovedGate,AvalancheandDynamicdV/dt Ruggedness ?FullyCharacterizedCapacitanceandAvalancheVoltage andCurrent ?ComplianttoRoHSdirective2002/95/EC

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體（臺灣）有限公司

K3114

N-Channel 650 V (D-S) MOSFET

FEATURES ?LowGateChargeQgResultsinSimpleDrive Requirement ?ImprovedGate,AvalancheandDynamicdV/dt Ruggedness ?FullyCharacterizedCapacitanceandAvalancheVoltage andCurrent ?ComplianttoRoHSdirective2002/95/EC

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體（臺灣）有限公司

K3114B

N-Channel 650 V (D-S) MOSFET

FEATURES ?LowGateChargeQgResultsinSimpleDrive Requirement ?ImprovedGate,AvalancheandDynamicdV/dt Ruggedness ?FullyCharacterizedCapacitanceandAvalancheVoltage andCurrent ?ComplianttoRoHSdirective2002/95/EC

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體（臺灣）有限公司

K3115

N-Channel 650V (D-S) Power MOSFET

FEATURES ?Lowfigure-of-merit(FOM)RonxQg ?Lowinputcapacitance(Ciss) ?Reducedswitchingandconductionlosses ?Ultralowgatecharge(Qg) ?Avalancheenergyrated(UIS) APPLICATIONS ?Serverandtelecompowersupplies ?Switchmodepowersupplies(SMPS) ?Powerfactorcorrection

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體（臺灣）有限公司

K3115B

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNELPOWERMOSFET DESCRIPTION The2SK3115BisN-ChannelMOSFETdevicethatfeaturesa lowgatechargeandexcellentswitchingcharacteristics,and designedforhighvoltageapplicationssuchasswitchingpower supply,ACadapter. FEATURES ?Lowgatecharge QG=21nC

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

K3116

SWITCHING N-CHANNEL POWER MOS FET

DESCRIPTION The2SK3116isN-channelDMOSFETdevicethatfeaturesalowgatechargeandexcellentswitchingcharacteristics,anddesignedforhighvoltageapplicationssuchasswitchingpowersupply,ACadapter. FEATURES ?Lowgatecharge QG=26nCTYP.(ID=7.5A,VDD=450V,

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會社

K3149

N-Channel 100-V (D-S) MOSFET

FEATURES ?TrenchFET?PowerMOSFETS ?175°CJunctionTemperature ?LowThermalResistancePackage

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體（臺灣）有限公司

產(chǎn)品屬性

  • 產(chǎn)品編號：

    K31

  • 制造商：

    Siemens

  • 包裝：

    盒

  • 描述：

    HEATER HEATER ELEMENT

供應(yīng)商型號品牌批號封裝庫存備注價格
日立
23+
TO-3P
5000
原裝正品,假一罰十
 詢價
三洋
24+
TO-92S
5000
詢價
東芝TOSHIBA
23+
TO-264
3000
全新原裝
 詢價
NEC
24+
TO220F
5825
公司原廠原裝現(xiàn)貨假一罰十!特價出售!強(qiáng)勢庫存!
 詢價
NEC
24+
TO-220
5000
只做原裝公司現(xiàn)貨
 詢價
NEC
2018+
TO252
6528
只做原裝正品假一賠十!只要網(wǎng)上有上百分百有庫存放心
 詢價
PHILIPS
04+
SOP8
260
原裝現(xiàn)貨海量庫存歡迎咨詢
 詢價
TOS
23+
NA
6500
全新原裝假一賠十
 詢價
VectorElectronics&Techno
新
5
全新原裝 貨期兩周
 詢價
N/A
23+
NA
6604
專做原裝正品,假一罰百!
 詢價
更多K31供應(yīng)商 更新時間2025-3-28 15:36:00

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