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K31

包裝：盒 描述：HEATER HEATER ELEMENT

SIEMENSSiemens Semiconductor Group

西門子德國西門子股份公司

K31

包裝：盒 描述：HEATER HEATER ELEMENT

SIEMENSSiemens Semiconductor Group

西門子德國西門子股份公司

K31

包裝：盒 描述：HEATER HEATER ELEMENT

SIEMENSSiemens Semiconductor Group

西門子德國西門子股份公司

K310

Surface Mounted Schottky Barrier Rectifiers

Features TheplasticpackagecarriesUnderwritersLaboratory FlammabilityClassification94V-0 Forsurfacemountedapplications Built-instrainrelief,idealforautomatedplacement Lowreverseleakage Highforwardsurgecurrentcapability

GWSEMIGoodwork Semiconductor Co., Ltd

唯圣電子唯圣電子有限公司

K3100G

3.3V Crystal Clock Oscillators

?TTL/CMOSCompatible TightSymmetry(45/55)Available ?Tri-StateOptionAvailable ?±100ppmStabilityStandard-K3100GC TighterStabilitiesAvailable ±25ppmStability:-K3100GA ±50ppmStability:-K3100GB ?CaseGroundforEMIProtection

MTRONPTI

mtronpti

K3100GA

3.3V Crystal Clock Oscillators

?TTL/CMOSCompatible TightSymmetry(45/55)Available ?Tri-StateOptionAvailable ?±100ppmStabilityStandard-K3100GC TighterStabilitiesAvailable ±25ppmStability:-K3100GA ±50ppmStability:-K3100GB ?CaseGroundforEMIProtection

MTRONPTI

mtronpti

K3100GB

3.3V Crystal Clock Oscillators

?TTL/CMOSCompatible TightSymmetry(45/55)Available ?Tri-StateOptionAvailable ?±100ppmStabilityStandard-K3100GC TighterStabilitiesAvailable ±25ppmStability:-K3100GA ±50ppmStability:-K3100GB ?CaseGroundforEMIProtection

MTRONPTI

mtronpti

K3100GC

3.3V Crystal Clock Oscillators

?TTL/CMOSCompatible TightSymmetry(45/55)Available ?Tri-StateOptionAvailable ?±100ppmStabilityStandard-K3100GC TighterStabilitiesAvailable ±25ppmStability:-K3100GA ±50ppmStability:-K3100GB ?CaseGroundforEMIProtection

MTRONPTI

mtronpti

K3113

SWITCHING N-CHANNEL POWER MOSFET

DESCRIPTION The2SK3113isN-channelDMOSFETdevicethatfeaturesalowgatechargeandexcellentswitchingcharacteristic,anddesignedforhighvoltageapplicationssuchasswitchingpowersupply,ACadapter. FEATURES ?Lowon-stateresistance RDS(on)=4.4?MAX.(VGS=10V,ID=1.0

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會社

K3113B

MOS FIELD EFFECT TRANSISTOR

DESCRIPTION The2SK3113BisN-channelMOSFETdevicethatfeaturesalowgatechargeandexcellentswitchingcharacteristics,anddesignedforhighvoltageapplicationssuchasswitchingpowersupply,ACadapter. FEATURES ?Lowon-stateresistance RDS(on)=4.4ΩMAX.(VGS=10V,ID=1.0A)

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會社

K3113B-ZK-E1-AY

N-Channel 650 V (D-S) MOSFET

FEATURES ?LowGateChargeQgResultsinSimpleDrive Requirement ?ImprovedGate,AvalancheandDynamicdV/dt Ruggedness ?FullyCharacterizedCapacitanceandAvalancheVoltage andCurrent ?ComplianttoRoHSdirective2002/95/EC

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體（臺灣）有限公司

K3113-Z

Power MOSFET

FEATURES ?LowGateChargeQgResultsinSimpleDrive Requirement ?ImprovedGate,AvalancheandDynamicdV/dt Ruggedness ?FullyCharacterizedCapacitanceandAvalancheVoltage andCurrent ?ComplianttoRoHSdirective2002/95/EC

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體（臺灣）有限公司

K3114

N-Channel 650 V (D-S) MOSFET

FEATURES ?LowGateChargeQgResultsinSimpleDrive Requirement ?ImprovedGate,AvalancheandDynamicdV/dt Ruggedness ?FullyCharacterizedCapacitanceandAvalancheVoltage andCurrent ?ComplianttoRoHSdirective2002/95/EC

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體（臺灣）有限公司

K3114B

N-Channel 650 V (D-S) MOSFET

FEATURES ?LowGateChargeQgResultsinSimpleDrive Requirement ?ImprovedGate,AvalancheandDynamicdV/dt Ruggedness ?FullyCharacterizedCapacitanceandAvalancheVoltage andCurrent ?ComplianttoRoHSdirective2002/95/EC

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體（臺灣）有限公司

K3115

N-Channel 650V (D-S) Power MOSFET

FEATURES ?Lowfigure-of-merit(FOM)RonxQg ?Lowinputcapacitance(Ciss) ?Reducedswitchingandconductionlosses ?Ultralowgatecharge(Qg) ?Avalancheenergyrated(UIS) APPLICATIONS ?Serverandtelecompowersupplies ?Switchmodepowersupplies(SMPS) ?Powerfactorcorrection

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體（臺灣）有限公司

K3115B

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNELPOWERMOSFET DESCRIPTION The2SK3115BisN-ChannelMOSFETdevicethatfeaturesa lowgatechargeandexcellentswitchingcharacteristics,and designedforhighvoltageapplicationssuchasswitchingpower supply,ACadapter. FEATURES ?Lowgatecharge QG=21nC

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

K3116

SWITCHING N-CHANNEL POWER MOS FET

DESCRIPTION The2SK3116isN-channelDMOSFETdevicethatfeaturesalowgatechargeandexcellentswitchingcharacteristics,anddesignedforhighvoltageapplicationssuchasswitchingpowersupply,ACadapter. FEATURES ?Lowgatecharge QG=26nCTYP.(ID=7.5A,VDD=450V,

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會社

K3149

N-Channel 100-V (D-S) MOSFET

FEATURES ?TrenchFET?PowerMOSFETS ?175°CJunctionTemperature ?LowThermalResistancePackage

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體（臺灣）有限公司

K315

Surface Mounted Schottky Barrier Rectifiers

Features TheplasticpackagecarriesUnderwritersLaboratory FlammabilityClassification94V-0 Forsurfacemountedapplications Built-instrainrelief,idealforautomatedplacement Lowreverseleakage Highforwardsurgecurrentcapability

GWSEMIGoodwork Semiconductor Co., Ltd

唯圣電子唯圣電子有限公司

K3155

N-Channel 200 V (D-S) MOSFET

FEATURES ?Halogen-freeAccordingtoIEC61249-2-21Definition ?SurfaceMount ?Low-ProfileThrough-Hole ?AvailableinTapeandReel ?DynamicdV/dtRating ?150°COperatingTemperature ?FastSwitching ?FullyAvalancheRated ?ComplianttoRoHSDirective2002/95/EC

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體（臺灣）有限公司

產(chǎn)品屬性

  • 產(chǎn)品編號：

    K31

  • 制造商：

    Siemens

  • 包裝：

    盒

  • 描述：

    HEATER HEATER ELEMENT

供應(yīng)商型號品牌批號封裝庫存備注價格
日立
23+
TO-3P
5000
原裝正品,假一罰十
 詢價
三洋
24+
TO-92S
5000
詢價
東芝TOSHIBA
23+
TO-264
3000
全新原裝
 詢價
NEC
2339+
TO220F
5825
公司原廠原裝現(xiàn)貨假一罰十!特價出售!強(qiáng)勢庫存!
 詢價
NEC
24+
TO-220
5000
只做原裝公司現(xiàn)貨
 詢價
NEC
2018+
TO252
6528
只做原裝正品假一賠十!只要網(wǎng)上有上百分百有庫存放心
 詢價
PHILIPS
04+
SOP8
260
原裝現(xiàn)貨海量庫存歡迎咨詢
 詢價
TOS
23+
NA
6500
全新原裝假一賠十
 詢價
VectorElectronics&Techno
新
5
全新原裝 貨期兩周
 詢價
N/A
23+
NA
6604
專做原裝正品,假一罰百!
 詢價
更多K31供應(yīng)商 更新時間2025-1-17 15:36:00

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