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TK25N60X

Marking:K25N60X;Package:TO-247;MOSFETs Silicon N-Channel MOS

Applications ?SwitchingVoltageRegulators Features (1)Lowdrain-sourceon-resistance:RDS(ON)=0.105Ω(typ.) byusedtoSuperJunctionStructure:DTMOS (2)High-speedswitchingpropertieswithlowercapacitance. (3)Enhancementmode:Vth=2.5to3.5V(VDS=10V,ID=1.2mA)

TOSHIBAToshiba Semiconductor

東芝株式會社東芝

TK25N60X5

Marking:K25N60X5;Package:TO-247;MOSFETs Silicon N-Channel MOS

Applications ?SwitchingVoltageRegulators Features (1)Fastreverserecoverytime:trr=120ns(typ.) (2)Lowdrain-sourceon-resistance:RDS(ON)=0.12Ω(typ.) (3)EasytocontrolGateswitching (4)Enhancementmode:Vth=3to4.5V(VDS=10V,ID=1.2mA)

TOSHIBAToshiba Semiconductor

東芝株式會社東芝

TK25Z60X

Marking:K25Z60X;Package:TO-247-4L;MOSFETs Silicon N-Channel MOS

Applications ?SwitchingVoltageRegulators Features (1)Lowdrain-sourceon-resistance:RDS(ON)=0.105Ω(typ.) byusedtoSuperJunctionStructure:DTMOS (2)High-speedswitchingpropertieswithlowercapacitance. (3)Enhancementmode:Vth=2.5to3.5V(VDS=10V,ID=1.2mA)

TOSHIBAToshiba Semiconductor

東芝株式會社東芝

TK28A65W

Marking:K28A65W;Package:TO-220SIS;MOSFETs Silicon N-Channel MOS

Applications ?SwitchingVoltageRegulators Features (1)Lowdrain-sourceon-resistance:RDS(ON)=0.094Ω(typ.) byusingSuperJunctionStructure:DTMOS (2)EasytocontrolGateswitching (3)Enhancementmode:Vth=2.5to3.5V(VDS=10V,ID=1.6mA)

TOSHIBAToshiba Semiconductor

東芝株式會社東芝

TK28E65W

Marking:K28E65W;Package:TO-220;MOSFETs Silicon N-Channel MOS

Applications ?SwitchingVoltageRegulators Features (1)Lowdrain-sourceon-resistance:RDS(ON)=0.094Ω(typ.) byusingSuperJunctionStructure:DTMOS (2)EasytocontrolGateswitching (3)Enhancementmode:Vth=2.5to3.5V(VDS=10V,ID=1.6mA)

TOSHIBAToshiba Semiconductor

東芝株式會社東芝

TK28N65W

Marking:K28N65W;Package:TO-247;MOSFETs Silicon N-Channel MOS

Applications ?SwitchingVoltageRegulators Features (1)Lowdrain-sourceon-resistance:RDS(ON)=0.094Ω(typ.) byusedtoSuperJunctionStructure:DTMOS (2)EasytocontrolGateswitching (3)Enhancementmode:Vth=2.5to3.5V(VDS=10V,ID=1.6mA)

TOSHIBAToshiba Semiconductor

東芝株式會社東芝

TK28N65W5

Marking:K28N65W5;Package:TO-247;MOSFETs Silicon N-Channel MOS

Applications ?SwitchingVoltageRegulators Features (1)Fastreverserecoverytime:trr=115ns(typ.) (2)Lowdrain-sourceon-resistance:RDS(ON)=0.11Ω(typ.) byusedtoSuperJunctionStructure:DTMOS (3)EasytocontrolGateswitching (4)Enhancementmode:Vth=3to4.5V(VDS=

TOSHIBAToshiba Semiconductor

東芝株式會社東芝

TK290A60Y

Marking:K290A60Y;Package:TO-220SIS;MOSFETs Silicon N-Channel MOS

Applications ?SwitchingVoltageRegulators Features (1)Lowdrain-sourceon-resistance:RDS(ON)=0.23Ω(typ.)byusingSuperJunctionStructure:DTMOS (2)EasytocontrolGateswitching (3)Enhancementmode:Vth=3to4V(VDS=10V,ID=0.45mA)

TOSHIBAToshiba Semiconductor

東芝株式會社東芝

TK290A65Y

Marking:K290A65Y;Package:TO-220SIS;MOSFETs Silicon N-Channel MOS

Applications ?SwitchingVoltageRegulators Features (1)Lowdrain-sourceon-resistance:RDS(ON)=0.23Ω(typ.)byusingSuperJunctionStructure:DTMOS (2)EasytocontrolGateswitching (3)Enhancementmode:Vth=3to4V(VDS=10V,ID=0.45mA)

TOSHIBAToshiba Semiconductor

東芝株式會社東芝

TK2K2A60F

Marking:K2K2A60F;Package:TO-220SIS;MOSFETs Silicon N-Channel MOS

Applications ?SwitchingPowerSupplies Features (1)EasytocontrolGateswitching (2)Lowdrain-sourceon-resistance:RDS(ON)=1.82Ω(typ.) (3)Enhancementmode:Vth=2to4V(VDS=10V,ID=0.35mA)

TOSHIBAToshiba Semiconductor

東芝株式會社東芝

詳細(xì)參數(shù)

  • 型號:

    K2

  • 制造商:

    Low Power Radio Solutions

  • 功能描述:

    PROGRAMMER RSC2-ALIEN

  • 功能描述:

    PROGRAMMER, RSC2-ALIEN

  • 功能描述:

    PROGRAMMER, RSC2-ALIEN,

  • SVHC:

    No SVHC(20-Jun-2013)

  • SVHC:

    No SVHC(20-Jun-2013) , RoHS

  • Compliant:

    Yes

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更多K2供應(yīng)商 更新時間2025-6-28 11:00:00