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TK20E60W

Marking:K20E60W;Package:TO-220;MOSFETs Silicon N-Channel MOS

Applications ?SwitchingVoltageRegulators Features (1)Lowdrain-sourceon-resistance:RDS(ON)=0.13Ω(typ.) byusedtoSuperJunctionStructure:DTMOS (2)EasytocontrolGateswitching (3)Enhancementmode:Vth=2.7to3.7V(VDS=10V,ID=1mA)

TOSHIBAToshiba Semiconductor

東芝株式會社東芝

TK20E60W5

Marking:K20E60W5;Package:TO-220;MOSFETs Silicon N-Channel MOS

Applications ?SwitchingVoltageRegulators Features (1)Fastreverserecoverytime:trr=110ns(typ.) (2)Lowdrain-sourceon-resistance:RDS(ON)=0.15Ω(typ.) byusedtoSuperJunctionStructure:DTMOS (3)EasytocontrolGateswitching (4)Enhancementmode:Vth=3to4.5V(VDS=

TOSHIBAToshiba Semiconductor

東芝株式會社東芝

TK20J60W5

Marking:K20J60W5;Package:TO-3P;MOSFETs Silicon N-Channel MOS

Applications ?SwitchingVoltageRegulators Features (1)Fastreverserecoverytime:trr=110ns(typ.) (2)Lowdrain-sourceon-resistance:RDS(ON)=0.15Ω(typ.) byusedtoSuperJunctionStructure:DTMOS (3)EasytocontrolGateswitching (4)Enhancementmode:Vth=3to4.5V(VDS=

TOSHIBAToshiba Semiconductor

東芝株式會社東芝

TK20N60W5

Marking:K20N60W5;Package:TO-247;MOSFETs Silicon N-Channel MOS

Applications ?SwitchingVoltageRegulators Features (1)Fastreverserecoverytime:trr=110ns(typ.) (2)Lowdrain-sourceon-resistance:RDS(ON)=0.15Ω(typ.) byusedtoSuperJunctionStructure:DTMOS (3)EasytocontrolGateswitching (4)Enhancementmode:Vth=3to4.5V(VDS=

TOSHIBAToshiba Semiconductor

東芝株式會社東芝

TK22A65X

Marking:K22A65X;Package:TO-220SIS;MOSFETs Silicon N-Channel MOS

Applications ?SwitchingVoltageRegulators Features (1)Lowdrain-sourceon-resistance:RDS(ON)=0.12Ω(typ.) byusingSuperJunctionStructure:DTMOS (2)EasytocontrolGateswitching (3)Enhancementmode:Vth=2.5to3.5V(VDS=10V,ID=1.1mA)

TOSHIBAToshiba Semiconductor

東芝株式會社東芝

TK22A65X5

Marking:K22A65X5;Package:TO-220SIS;MOSFETs Silicon N-Channel MOS

Applications ?SwitchingVoltageRegulators Features (1)Lowdrain-sourceon-resistance:RDS(ON)=0.135Ω(typ.) byusingSuperJunctionStructure:DTMOS (2)EasytocontrolGateswitching (3)Enhancementmode:Vth=3to4.5V(VDS=10V,ID=1.1mA)

TOSHIBAToshiba Semiconductor

東芝株式會社東芝

TK25A60X

Marking:K25A60X;Package:TO-220SIS;MOSFETs Silicon N-Channel MOS

Applications ?SwitchingVoltageRegulators Features (1)Lowdrain-sourceon-resistance:RDS(ON)=0.105Ω(typ.) byusedtoSuperJunctionStructure:DTMOS (2)High-speedswitchingpropertieswithlowercapacitance. (3)Enhancementmode:Vth=2.5to3.5V(VDS=10V,ID=1.2mA)

TOSHIBAToshiba Semiconductor

東芝株式會社東芝

TK25A60X5

Marking:K25A60X5;Package:TO-220SIS;MOSFETs Silicon N-Channel MOS

Applications ?SwitchingVoltageRegulators Features (1)Fastreverserecoverytime:trr=120ns(typ.) (2)Lowdrain-sourceon-resistance:RDS(ON)=0.12Ω(typ.) (3)EasytocontrolGateswitching (4)Enhancementmode:Vth=3to4.5V(VDS=10V,ID=1.2mA)

TOSHIBAToshiba Semiconductor

東芝株式會社東芝

TK25E60X

Marking:K25E60X;Package:TO-220;MOSFETs Silicon N-Channel MOS

Applications ?SwitchingVoltageRegulators Features (1)Lowdrain-sourceon-resistance:RDS(ON)=0.105Ω(typ.) byusedtoSuperJunctionStructure:DTMOS (2)High-speedswitchingpropertieswithlowercapacitance. (3)Enhancementmode:Vth=2.5to3.5V(VDS=10V,ID=1.2mA)

TOSHIBAToshiba Semiconductor

東芝株式會社東芝

TK25E60X5

Marking:K25E60X5;Package:TO-220;MOSFETs Silicon N-Channel MOS

Applications ?SwitchingVoltageRegulators Features (1)Fastreverserecoverytime:trr=120ns(typ.) (2)Lowdrain-sourceon-resistance:RDS(ON)=0.12Ω(typ.) (3)EasytocontrolGateswitching (4)Enhancementmode:Vth=3to4.5V(VDS=10V,ID=1.2mA)

TOSHIBAToshiba Semiconductor

東芝株式會社東芝

詳細(xì)參數(shù)

  • 型號:

    K2

  • 制造商:

    Low Power Radio Solutions

  • 功能描述:

    PROGRAMMER RSC2-ALIEN

  • 功能描述:

    PROGRAMMER, RSC2-ALIEN

  • 功能描述:

    PROGRAMMER, RSC2-ALIEN,

  • SVHC:

    No SVHC(20-Jun-2013)

  • SVHC:

    No SVHC(20-Jun-2013) , RoHS

  • Compliant:

    Yes

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更多K2供應(yīng)商 更新時間2025-6-28 11:00:00