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MBRS170

Marking：K17；Package：SOD-123FL；SCHOTTK Y BARRIER DIODE

Features TheplasticpackagecarriesUnderwritersLaboratory FlammabilityClassification94V-0 Metalsiliconjunction,majoritycarrierconduction Lowpowerloss,highefficiency Highforwardsurgecurrentcapability Hightemperaturesolderingguaranteed: 250C/10seconds,0.375”(9.5mm)leadl

SYChangzhou Shunye Electronics Co.,Ltd.

順燁電子江蘇順燁電子有限公司

SS1070FL

Marking：K17；Package：SOD-123FL；SCHOTTK Y BARRIER DIODE

Features TheplasticpackagecarriesUnderwritersLaboratory FlammabilityClassification94V-0 Metalsiliconjunction,majoritycarrierconduction Lowpowerloss,highefficiency Highforwardsurgecurrentcapability Hightemperaturesolderingguaranteed: 250C/10seconds,0.375”(9.5mm)leadl

SYChangzhou Shunye Electronics Co.,Ltd.

順燁電子江蘇順燁電子有限公司

TK17A65W

Marking：K17A65W；Package：TO-220SIS；MOSFETs Silicon N-Channel MOS

Applications ?SwitchingVoltageRegulators Features (1)Lowdrain-sourceon-resistance:RDS(ON)=0.17Ω(typ.) byusedtoSuperJunctionStructure:DTMOS (2)EasytocontrolGateswitching (3)Enhancementmode:Vth=2.5to3.5V(VDS=10V,ID=0.9mA)

TOSHIBAToshiba Semiconductor

東芝株式會(huì)社東芝

TK17A65W5

Marking：K17A65W5；Package：TO-220SIS；MOSFETs Silicon N-Channel MOS

Applications ?SwitchingVoltageRegulators Features (1)Fastreverserecoverytime:trr=110ns(typ.) (2)Lowdrain-sourceon-resistance:RDS(ON)=0.19Ω(typ.) byusedtoSuperJunctionStructure:DTMOS (3)EasytocontrolGateswitching (4)Enhancementmode:Vth=3to4.5V(VDS=

TOSHIBAToshiba Semiconductor

東芝株式會(huì)社東芝

TK17A80W

Marking：K17A80W；Package：TO-220SIS；MOSFETs Silicon N-Channel MOS

Applications ?SwitchingVoltageRegulators Features (1)Lowdrain-sourceon-resistance:RDS(ON)=0.25Ω(typ.) byusingSuperJunctionStructure:DTMOS (2)EasytocontrolGateswitching (3)Enhancementmode:Vth=3.0to4.0V(VDS=10V,ID=0.85mA)

TOSHIBAToshiba Semiconductor

東芝株式會(huì)社東芝

TK17E65W

Marking：K17E65W；Package：TO-220；MOSFETs Silicon N-Channel MOS

Applications ?SwitchingVoltageRegulators Features (1)Lowdrain-sourceon-resistance:RDS(ON)=0.17Ω(typ.) byusedtoSuperJunctionStructure:DTMOS (2)EasytocontrolGateswitching (3)Enhancementmode:Vth=2.5to3.5V(VDS=10V,ID=0.9mA)

TOSHIBAToshiba Semiconductor

東芝株式會(huì)社東芝

TK17E80W

Marking：K17E80W；Package：TO-220；MOSFETs Silicon N-Channel MOS

Applications ?SwitchingVoltageRegulators Features (1)Lowdrain-sourceon-resistance:RDS(ON)=0.25Ω(typ.) byusingSuperJunctionStructure:DTMOS (2)EasytocontrolGateswitching (3)Enhancementmode:Vth=3.0to4.0V(VDS=10V,ID=0.85mA)

TOSHIBAToshiba Semiconductor

東芝株式會(huì)社東芝

TK17N65W

Marking：K17N65W；Package：TO-247；MOSFETs Silicon N-Channel MOS

Applications ?SwitchingVoltageRegulators Features (1)Lowdrain-sourceon-resistance:RDS(ON)=0.17Ω(typ.) byusedtoSuperJunctionStructure:DTMOS (2)EasytocontrolGateswitching (3)Enhancementmode:Vth=2.5to3.5V(VDS=10V,ID=0.9mA)

TOSHIBAToshiba Semiconductor

東芝株式會(huì)社東芝

產(chǎn)品屬性

  • 產(chǎn)品編號：

    K17

  • 制造商：

    Carlo Gavazzi Inc.

  • 類別：

    開關(guān) > 配件

  • 包裝：

    散裝

  • 配件類型：

    操作鍵

  • 配套使用/相關(guān)產(chǎn)品：

    PS21S 和 PS42S 系列

  • 描述：

    SHOCK MNT BENT KEY PS21S/PS42S

供應(yīng)商型號品牌批號封裝庫存備注價(jià)格
NEC
12+
TO-263
15000
全新原裝,絕對正品,公司現(xiàn)貨供應(yīng)。
 詢價(jià)
日立
23+
TO-3P
5000
原裝正品,假一罰十
 詢價(jià)
東芝
24+
TO-92
8000
詢價(jià)
TOSHIBA
23+
TO-263
1505
專業(yè)優(yōu)勢供應(yīng)
 詢價(jià)
NEC
24+
TO-3P
5000
全現(xiàn)原裝公司現(xiàn)貨
 詢價(jià)
NEC
2018+
TO263
6528
只做原裝正品假一賠十!只要網(wǎng)上有上百分百有庫存放心
 詢價(jià)
ICST
23+
NA
19960
只做進(jìn)口原裝,終端工廠免費(fèi)送樣
 詢價(jià)
NEC
2020+
TO-3P
5000
百分百原裝正品 真實(shí)公司現(xiàn)貨庫存 本公司只做原裝 可
 詢價(jià)
TOS
23+
NA
6500
全新原裝假一賠十
 詢價(jià)
KOA
新
4000
全新原裝 貨期兩周
 詢價(jià)
更多K17供應(yīng)商 更新時(shí)間2025-3-25 11:04:00

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