首頁 >JCS80N10WF-O-W-N-B>規(guī)格書列表
| 零件編號 | 下載&訂購 | 功能描述 | 制造商&上傳企業(yè) | LOGO |
|---|---|---|---|---|
JCS80N10WF-O-W-N-B | N-CHANNEL MOSFET | JSMCJILIN SINO-MICROELECTRONICS CO., LTD. 華微電子吉林華微電子股份有限公司 | JSMC | |
N-Channel100-V(D-S)175?CMOSFET | VBSEMIVBsemi Electronics Co.,Ltd 微碧半導體微碧半導體（臺灣）有限公司 | VBSEMI | ||
N-Channel100-V(D-S)175?CMOSFET FEATURES ?TrenchFET?PowerMOSFET ?175°CMaximumJunctionTemperature ?ComplianttoRoHSDirective2002/95/EC | VBSEMIVBsemi Electronics Co.,Ltd 微碧半導體微碧半導體（臺灣）有限公司 | VBSEMI | ||
N-CHANNELMOSFETinaTO-220PlasticPackage | FOSHANFoshan Blue Rocket Electronics Co.,Ltd. 藍箭電子佛山市藍箭電子股份有限公司 | FOSHAN | ||
N-ChannelMOSFETusesadvancedtrenchtechnology | DOINGTERSHENZHEN DOINGTER SEMICONDUCTOR CO., LTD 杜因特深圳市杜因特半導體有限公司 | DOINGTER | ||
N-CHANNELMOSFETinaTO-263PlasticPackage | FOSHANFoshan Blue Rocket Electronics Co.,Ltd. 藍箭電子佛山市藍箭電子股份有限公司 | FOSHAN | ||
N-ChannelMOSFETusesadvancedtrenchtechnology | DOINGTERSHENZHEN DOINGTER SEMICONDUCTOR CO., LTD 杜因特深圳市杜因特半導體有限公司 | DOINGTER | ||
N-ChannelSuperTrenchPowerMOSFET | HMSEMIShenzhen Huazhimei Semiconductor Co., Ltd 華之美半導體深圳市華之美半導體有限公司 | HMSEMI | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=80A@TC=25℃ ·DrainSourceVoltage :VDSS=100V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=12.5mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導體股份有限公司 | ISC | ||
HiPerFETTMMOSFETISOPLUS220 HiPerFET?MOSFETISOPLUS220? ElectricallyIsolatedBackSurface Features ●SiliconchiponDirect-Copper-Bondsubstrate -Highpowerdissipation -Isolatedmountingsurface -2500Velectricalisolation ●Lowdraintotabcapacitance( | IXYS IXYS Corporation | IXYS | ||
HiPerFETPowerMOSFETs VDSS=100V ID25=80A RDS(on)=12.5m? trr≤200ns N-ChannelEnhancementMode AvalancheRated,Highdv/dt Features Internationalstandardpackages LowRDS(on) RatedforunclampedInductiveloadswitching(UIS) MoldingepoxiesmeetUL94V-0 flammabilit | IXYS IXYS Corporation | IXYS | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent–ID=80A@TC=25℃ ·DrainSourceVoltage- :VDSS=100V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=12.5mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DC | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導體股份有限公司 | ISC | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent–ID=80A@TC=25℃ ·DrainSourceVoltage- :VDSS=100V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=15mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCco | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導體股份有限公司 | ISC | ||
HiPerFETPowerMOSFETsQ-Class VDSS=100V ID25=80A RDS(on)=15m? trr≤200ns N-ChannelEnhancementMode AvalancheRated,HighdV/dt LowGateChargeandCapacitances Features ?IXYSadvancedlowgatechargeprocess ?Internationalstandardpackages ?Lowgatechargeandcapacitance -ea | IXYS IXYS Corporation | IXYS | ||
HiPerFETPowerMOSFETs VDSS=100V ID25=80A RDS(on)=12.5m? trr≤200ns N-ChannelEnhancementMode AvalancheRated,Highdv/dt Features Internationalstandardpackages LowRDS(on) RatedforunclampedInductiveloadswitching(UIS) MoldingepoxiesmeetUL94V-0 flammabilit | IXYS IXYS Corporation | IXYS | ||
HiPerFETPowerMOSFETsQ-Class VDSS=100V ID25=80A RDS(on)=15m? trr≤200ns N-ChannelEnhancementMode AvalancheRated,HighdV/dt LowGateChargeandCapacitances Features ?IXYSadvancedlowgatechargeprocess ?Internationalstandardpackages ?Lowgatechargeandcapacitance -ea | IXYS IXYS Corporation | IXYS | ||
TrenchMVTMPowerMOSFET VDSS=100V ID25=80A RDS(on)≤14mΩ N-ChannelEnhancementMode AvalancheRated FastIntrinsicDiode Features InternationalStandardPackages 175°COperatingTemperature AvalancheRated HighCurrentHandlingCapability FastIntrinsicDiode LowRDS(on) | IXYS IXYS Corporation | IXYS | ||
iscN-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導體股份有限公司 | ISC | ||
iscN-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導體股份有限公司 | ISC | ||
TrenchMVTMPowerMOSFET VDSS=100V ID25=80A RDS(on)≤14mΩ N-ChannelEnhancementMode AvalancheRated FastIntrinsicDiode Features InternationalStandardPackages 175°COperatingTemperature AvalancheRated HighCurrentHandlingCapability FastIntrinsicDiode LowRDS(on) | IXYS IXYS Corporation | IXYS |
| 供應商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
JS |
1822+ |
TO-220C |
9852 |
只做原裝正品假一賠十為客戶做到零風險!! |
詢價 | ||
JS |
18+ |
TO-220C |
41200 |
原裝正品,現(xiàn)貨特價 |
詢價 | ||
JCS |
23+ |
TO-220 |
50000 |
全新原裝正品現(xiàn)貨,支持訂貨 |
詢價 | ||
JCS |
2022 |
TO-220 |
80000 |
原裝現(xiàn)貨,OEM渠道,歡迎咨詢 |
詢價 | ||
JCS |
23+ |
NA/ |
4250 |
原裝現(xiàn)貨,當天可交貨,原型號開票 |
詢價 | ||
SINO |
23+ |
TO-220 |
10000 |
公司只做原裝正品 |
詢價 | ||
Sino |
TO-220 |
22+ |
6000 |
十年配單,只做原裝 |
詢價 | ||
Sino |
23+ |
TO-220 |
6000 |
原裝正品，支持實單 |
詢價 | ||
fairchild |
2023+ |
TO-220 |
80000 |
一級代理/分銷渠道價格優(yōu)勢 十年芯程一路只做原裝正品 |
詢價 | ||
Sino |
22+ |
TO-220 |
25000 |
只做原裝進口現(xiàn)貨,專注配單 |
詢價 |
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