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2N6758

VGSRatedat?20V

DESCRIPTION ?VGSRatedat±20V ?SiliconGateforfastswitchingspeeds ?IDSS、RDS(ON),specifiedatelevatedtemperature ?Lowdrivereqirements APPLICATIONS designedforhighpower,highspeedapplication,suchasswitchingapplies,UPS,ACandDCmotorcontrols,relayandhighenergy

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

2N6758

N-CHANNELMOSFET

N-CHANNELMOSFET QualifiedperMIL-PRF-19500/542

MicrosemiMicrosemi Corporation

美高森美美高森美公司

2N6758

N-ChannelPowerMOSFETs,9A,150V/200V

Description Thesedevicesaren-channel,enchancementmode,powerMOSFETsdesignedespeciallyforhighpower,highspeedapplications,suchasswitchingpowersupplies,UPS,ACandDCmotorcontrols,relayandsolenoiddriversandhighenergypulsecircuits.

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

JANTX2N6758

REPETITIVEAVALANCHEANDdv/dtRATEDHEXFETTRANSISTORSTHRU-HOLE(TO-204AA/AE)

200Volt,0.40?HEXFET HEXFETtechnologyisthekeytoInternationalRectifier’sadvancedlineofpowerMOSFETtransistors.Theefficientgeometryachievesverylowonstateresistancecombinedwithhightransconductance. HEXFETtransistorsalsofeatureallofthewell-establishadvantag

IRF

International Rectifier

JANTX2N6758

RepetitiveAvalancheRatings

IRF

International Rectifier

JANTX2N6758

POWERMOSFETN-CHANNEL(BVdss=200V,Rds(on)=0.40ohm,Id=9A)

200Volt,0.40?HEXFET HEXFETtechnologyisthekeytoInternationalRectifier’sadvancedlineofpowerMOSFETtransistors.Theefficientgeometryachievesverylowonstateresistancecombinedwithhightransconductance. HEXFETtransistorsalsofeatureallofthewell-establishadvantag

IRF

International Rectifier

JANTXV2N6758

REPETITIVEAVALANCHEANDdv/dtRATEDHEXFETTRANSISTORSTHRU-HOLE(TO-204AA/AE)

200Volt,0.40?HEXFET HEXFETtechnologyisthekeytoInternationalRectifier’sadvancedlineofpowerMOSFETtransistors.Theefficientgeometryachievesverylowonstateresistancecombinedwithhightransconductance. HEXFETtransistorsalsofeatureallofthewell-establishadvantag

IRF

International Rectifier

JANTXV2N6758

POWERMOSFETN-CHANNEL(BVdss=200V,Rds(on)=0.40ohm,Id=9A)

200Volt,0.40?HEXFET HEXFETtechnologyisthekeytoInternationalRectifier’sadvancedlineofpowerMOSFETtransistors.Theefficientgeometryachievesverylowonstateresistancecombinedwithhightransconductance. HEXFETtransistorsalsofeatureallofthewell-establishadvantag

IRF

International Rectifier

詳細參數(shù)

  • 型號：

    JAN2N6758

  • 制造商：

    Microsemi Corporation

  • 功能描述：

    N CHANNEL MOSFET - Bulk

供應(yīng)商型號品牌批號封裝庫存備注價格
NO
24+
NO
13
詢價
IR/MOT
24+
TO-3
850
原裝現(xiàn)貨假一罰十
 詢價
MICROSEMI
638
原裝正品
 詢價
IR/MOT
專業(yè)鐵帽
TO-3
67500
鐵帽原裝主營-可開原型號增稅票
 詢價
Microsemi Corporation
22+
TO204AA TO3
9000
原廠渠道,現(xiàn)貨配單
 詢價
Microsemi Corporation
21+
TO204AA TO3
13880
公司只售原裝,支持實單
 詢價
Microsemi Corporation
23+
TO204AA TO3
9000
原裝正品，支持實單
 詢價
Microsemi Corporation
2022+
TO-204AA,TO-3
38550
全新原裝 支持表配單 中國著名電子元器件獨立分銷
 詢價
IR
23+
TO-3
8000
只做原裝現(xiàn)貨
 詢價
IR
23+
TO-3
7000
詢價
更多JAN2N6758供應(yīng)商 更新時間2025-3-24 15:30:00

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