零件編號 | 下載&訂購 | 功能描述 | 制造商&上傳企業(yè) | LOGO |
---|---|---|---|---|
P-ChannelEnhancementModeFieldEffectTransistor FEATURES -30V,-105.5A,RDS(ON)=5.8mW@VGS=-10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-220&TO-263package. RoHScompliant. RDS(ON)=8.5mW@VGS=-4.5V. | CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司 | CET-MOS | ||
P-ChannelEnhancementModeFieldEffectTransistor FEATURES -30V,-92A,RDS(ON)=6.0mW@VGS=-10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RDS(ON)=9.0mW@VGS=-4.5V. RoHScompliant. | CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司 | CET-MOS | ||
P-ChannelEnhancementModeFieldEffectTransistor FEATURES ■-30V,-105.5A,RDS(ON)=5.8mΩ@VGS=-10V. RDS(ON)=8.5mΩ@VGS=-4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Lead-freeplating;RoHScompliant. ■TO-220&TO-263package. | CETChino-Excel Technology 華瑞華瑞股份有限公司 | CET | ||
P-ChannelEnhancementModeFieldEffectTransistor FEATURES -30V,-105.5A,RDS(ON)=5.8mW@VGS=-10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-220&TO-263package. RoHScompliant. RDS(ON)=8.5mW@VGS=-4.5V. | CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司 | CET-MOS | ||
P-ChannelEnhancementModeFieldEffectTransistor FEATURES -30V,-92A,RDS(ON)=6.0mW@VGS=-10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RDS(ON)=9.0mW@VGS=-4.5V. RoHScompliant. | CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司 | CET-MOS | ||
P-CHANNELENHANCEMENTMODEPOWERMOSFET ●GeneralDescription TheTF110P03McombinesadvancedtrenchMOSFETtechnologywithalowresistancepackage toprovideextremelylowRDS(ON). ●Features AdvancehighcelldensityTrenchtechnology LowRDS(ON)tominimizeconductiveloss LowGateChargeforfastswitchingLowThermalresistan | TUOFENGShenzhen Tuofeng Semiconductor Technology Co 拓鋒半導體深圳市拓鋒半導體科技有限公司 | TUOFENG | ||
P-CHANNELENHANCEMENTMODEPOWERMOSFET ●GeneralDescription TheTF110P03NcombinesadvancedtrenchMOSFETtechnologywithalowresistancepackage toprovideextremelylowRDS(ON). ●Features AdvancehighcelldensityTrenchtechnology LowRDS(ON)tominimizeconductiveloss LowGateChargeforfastswitchingLowThermalresistan | TUOFENGShenzhen Tuofeng Semiconductor Technology Co 拓鋒半導體深圳市拓鋒半導體科技有限公司 | TUOFENG |
供應商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
---|---|---|---|---|---|---|---|
ON |
16+ |
原廠封裝 |
10000 |
全新原裝正品,代理優(yōu)勢渠道供應,歡迎來電咨詢 |
詢價 | ||
ON |
24+ |
SMD |
5500 |
長期供應原裝現(xiàn)貨實單可談 |
詢價 | ||
ONSEMICON |
24+ |
35200 |
一級代理/放心采購 |
詢價 | |||
ON/安森美 |
24+ |
TO92 |
16500 |
原裝現(xiàn)貨假一賠十 |
詢價 | ||
ON |
13+ |
假一賠十 |
8 |
一級代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力 |
詢價 | ||
ON |
23+ |
假一賠十 |
8 |
正規(guī)渠道,只有原裝! |
詢價 | ||
ON |
NA |
5500 |
一級代理 原裝正品假一罰十價格優(yōu)勢長期供貨 |
詢價 | |||
ON |
23+ |
2508 |
原廠原裝正品 |
詢價 | |||
ON |
589220 |
16余年資質(zhì) 絕對原盒原盤 更多數(shù)量 |
詢價 | ||||
ON/安森美 |
24+ |
TO92 |
10000 |
只做原裝正品上傳就有貨假一賠十 |
詢價 |
相關(guān)規(guī)格書
更多- J110RLRA
- J110-TR1
- J111
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- J111_D26Z
- J111_D74Z
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- J11118
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- J111-E3
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- J112
- J112,126
- J112_D26Z
- J112_D27Z
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- J1121AS12VDC
- J1121AS24VDC
- J1121AS6VDC
- J112-26PM
- J112A
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- J112K1AS5VDC
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- J112-TE
- J113
- J113,126
- J113_D27Z
- J113_D74Z_Q
- J113_D75Z_Q
- J113_TO-92
相關(guān)庫存
更多- J110RLRAG
- J110-TR1-E3
- J111,126
- J111_12
- J111_D27Z
- J111_D74Z_Q
- J111_ND26Z
- J111_TO-92
- J1111AS100VDC
- J1111AS18VDC
- J1111AS48VDC
- J1111AS6VDC
- J1111CS100VDC
- J1111CS18VDC
- J1111CS48VDC
- J1111CS6VDC
- J111A
- J111RL1
- J111RLRA
- J111RLRP
- J111-TA
- J111-TR1
- J112 AMO
- J112_D11Z
- J112_D26Z_Q
- J112_D74Z
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- J1121AS18VDC
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- J112K1AS24VDC
- J112K1AS6VDC
- J112P05
- J112RL1G
- J112RLRAG
- J112-TR1-E3
- J113 AMO
- J113_D26Z
- J113_D74Z
- J113_D75Z
- J113_Q
- J1132P02B