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CEU110P03

P-Channel Enhancement Mode Field Effect Transistor

FEATURES -30V,-92A,RDS(ON)=6.0mW@VGS=-10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RDS(ON)=9.0mW@VGS=-4.5V. RoHScompliant.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEB110P03

P-ChannelEnhancementModeFieldEffectTransistor

FEATURES -30V,-105.5A,RDS(ON)=5.8mW@VGS=-10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-220&TO-263package. RoHScompliant. RDS(ON)=8.5mW@VGS=-4.5V.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CED110P03

P-ChannelEnhancementModeFieldEffectTransistor

FEATURES -30V,-92A,RDS(ON)=6.0mW@VGS=-10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RDS(ON)=9.0mW@VGS=-4.5V. RoHScompliant.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEP110P03

P-ChannelEnhancementModeFieldEffectTransistor

FEATURES -30V,-105.5A,RDS(ON)=5.8mW@VGS=-10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-220&TO-263package. RoHScompliant. RDS(ON)=8.5mW@VGS=-4.5V.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEP110P03

P-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■-30V,-105.5A,RDS(ON)=5.8mΩ@VGS=-10V. RDS(ON)=8.5mΩ@VGS=-4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Lead-freeplating;RoHScompliant. ■TO-220&TO-263package.

CETChino-Excel Technology

華瑞華瑞股份有限公司

TF110P03M

P-CHANNELENHANCEMENTMODEPOWERMOSFET

●GeneralDescription TheTF110P03McombinesadvancedtrenchMOSFETtechnologywithalowresistancepackage toprovideextremelylowRDS(ON). ●Features AdvancehighcelldensityTrenchtechnology LowRDS(ON)tominimizeconductiveloss LowGateChargeforfastswitchingLowThermalresistan

TUOFENGShenzhen Tuofeng Semiconductor Technology Co

拓鋒半導(dǎo)體深圳市拓鋒半導(dǎo)體科技有限公司

TF110P03N

P-CHANNELENHANCEMENTMODEPOWERMOSFET

●GeneralDescription TheTF110P03NcombinesadvancedtrenchMOSFETtechnologywithalowresistancepackage toprovideextremelylowRDS(ON). ●Features AdvancehighcelldensityTrenchtechnology LowRDS(ON)tominimizeconductiveloss LowGateChargeforfastswitchingLowThermalresistan

TUOFENGShenzhen Tuofeng Semiconductor Technology Co

拓鋒半導(dǎo)體深圳市拓鋒半導(dǎo)體科技有限公司

供應(yīng)商型號品牌批號封裝庫存備注價格
CET/華瑞
23+
TO-252
360000
專業(yè)供應(yīng)MOS/LDO/晶體管/有大量價格低
詢價
renesas
2023+
SOT-23
80000
一級代理/分銷渠道價格優(yōu)勢 十年芯程一路只做原裝正品
詢價
CET
21+
TO-252
360
原裝現(xiàn)貨假一賠十
詢價
CET/華瑞
23+
TO-252
10000
公司只做原裝正品
詢價
CET
23+
TO-252
50000
全新原裝正品現(xiàn)貨,支持訂貨
詢價
CET
TO-252
22+
6000
十年配單,只做原裝
詢價
CET/華瑞
23+
TO-252
10000
原廠授權(quán)一級代理,專業(yè)海外優(yōu)勢訂貨,價格優(yōu)勢、品種
詢價
CET
23+
TO-252
6000
原裝正品,支持實單
詢價
CET
1932+
TO-252
350
一級代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力
詢價
CET/華瑞
2022+
TO-252
30000
進口原裝現(xiàn)貨供應(yīng),原裝 假一罰十
詢價
更多CEU110P03供應(yīng)商 更新時間2024-12-29 10:34:00