訂購數(shù)量 | 價格 |
---|---|
1+ |
首頁>IXTQ30N60P>芯片詳情
IXTQ30N60P_IXYS_MOSFET 30.0 Amps 600 V 0.24 Ohm Rds星辰微電科技
- 詳細信息
- 規(guī)格書下載
產(chǎn)品屬性
- 類型
描述
- 型號:
IXTQ30N60P
- 功能描述:
MOSFET 30.0 Amps 600 V 0.24 Ohm Rds
- RoHS:
否
- 制造商:
STMicroelectronics
- 晶體管極性:
N-Channel
- 汲極/源極擊穿電壓:
650 V
- 閘/源擊穿電壓:
25 V
- 漏極連續(xù)電流:
130 A 電阻汲極/源極
- RDS(導(dǎo)通):
0.014 Ohms
- 配置:
Single
- 安裝風格:
Through Hole
- 封裝/箱體:
Max247
- 封裝:
Tube
供應(yīng)商
- 企業(yè):
深圳市星辰微電科技有限公司
- 商鋪:
- 聯(lián)系人:
吳先生
- 手機:
17375148621
- 詢價:
- 電話:
0755-82713279
- 地址:
深圳市福田區(qū)華強北街道華航社區(qū)紅荔路3011號上步工業(yè)區(qū)13棟上步工業(yè)區(qū)501棟501棟411
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