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LMPC150N10

Marking：NCEP01T13D；Package：TO-263-2L；N-Channel Super Trench Power MOSFET

LEIDITECHShanghai Leiditech Electronic Technology Co., Ltd

雷卯電子上海雷卯電子科技有限公司

ADM150N10G

N-ChannelEnhancementModeFieldEffectTransistor

Features: ●LowGateChargeforFastSwitchingApplication ●LowRDS(ON)toMinimizeConductiveLoss ●100%EASGuaranteed ●OptimizedV(BR)DSSRuggedness ●Lead-Free,RoHSCompliant Description: TheADM150N10GseriesMOSFETsisanewtechnology,whichcombinesaninnovativesuperjunc

ADVAdvanced (Shenzhen) Electronics Co.,Ltd

愛德微愛德微(深圳)電子有限公司

ADM150N10G

N-ChannelEnhancementModeFieldEffectTransistor

Features: ●LowGateChargeforFastSwitchingApplication ●LowRDS(ON)toMinimizeConductiveLoss ●100%EASGuaranteed ●OptimizedV(BR)DSSRuggedness ●Lead-Free,RoHSCompliant Description: TheADM150N10GseriesMOSFETsisanewtechnology,whichcombinesaninnovativesuperjunc

ADVAdvanced (Shenzhen) Electronics Co.,Ltd

愛德微愛德微(深圳)電子有限公司

FDB150N10

N-ChannelPowerTrench?MOSFET100V,57A,15m廓

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FDB150N10

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=57A@TC=25℃ ·DrainSourceVoltage :VDSS=100V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=15mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-D

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

FDI150N10

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=57A@TC=25℃ ·DrainSourceVoltage :VDSS=100V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=16mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-D

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

FDI150N10

N-ChannelPowerTrench?MOSFET100V,57A,16m廓

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FDP150N10

N-ChannelPowerTrench?MOSFET100V,57A,15m廓

GeneralDescription ThisN-ChannelMOSFETisproducedusingFairchildSemiconductor’sadvancedPowerTrenchprocessthathasbeenespeciallytailoredtominimizetheon-stateresistanceandyetmaintainsuperiorswitchingperformance. Features ?RDS(on)=12m?(Typ.)@VGS=10V,ID=49A ?Fa

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FDP150N10

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

FDP150N10A

N-ChannelPowerTrench?MOSFET100V,50A,15m廓

Description ThisN-ChannelMOSFETisproducedusingFairchildSemiconductor’sadvancedPowerTrench?processthathasbeentailoredtominimizetheon-stateresistancewhilemaintainingsuperiorswitchingperformance. Features ?RDS(on)=12.5mΩ(Typ.)@VGS=10V,ID=50A ?FastSwitching

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

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Red Lion Controls
2022+
13
全新原裝 貨期兩周
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Red
20+
N/A
78
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RED
20+
傳感器
96
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MURATA/村田
2022+
3000
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MURATA/村田
23+
13000
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Leiditech(雷卯電子)
23+
DFN10(1x2.5)
6000
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LEIDITECH(雷卯)
24+
con
10000
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只做原裝
24+
36520
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ST
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LL-41
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ST
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LL-41
16900
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更多LMPC150N10供應(yīng)商 更新時(shí)間2025-2-3 9:50:00

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