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IXKH47N60C

CoolMOS??1)PowerMOSFET

CoolMOS?1)PowerMOSFET LowRDSon,highVDSS SuperjunctionMOSFET Features ?3rdgenerationSuperjunctionpowerMOSFET -highblockingcapability -lowestresistance -avalancheratedforunclampedinductiveswitching(UIS) -lowthermalresistanceduetoreducedchipthic

IXYS

IXYS Corporation

IXKH47N60C

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

PCFC47N60FW

DESIGN/PROCESSCHANGENOTIFICATION

Description SuperFET?IIMOSFETisFairchildSemiconductor?’sfirstgenerationofhighvoltagesuper-junction(SJ)MOSFETfamilythatisutilizingchargebalancetechnologyforoutstandinglowon-resistanceandlowergatechargeperformance.Thisadvancedtechnologyistailoredtominimizeconducti

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

SIHG47N60AE

ESeriesPowerMOSFET

VishayVishay Siliconix

威世科技威世科技半導體

SIHG47N60AE

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

SIHG47N60AEF

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

SIHG47N60AEF

EFSeriesPowerMOSFETWithFastBodyDiode

VishayVishay Siliconix

威世科技威世科技半導體

SIHG47N60E

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

SIHG47N60E

ESeriesPowerMOSFET

FEATURES ?Lowfigure-of-merit(FOM)RonxQg ?Lowinputcapacitance(Ciss) ?Reducedswitchingandconductionlosses ?Ultralowgatecharge(Qg) ?Avalancheenergyrated(UIS) ?Materialcategorization:fordefinitionsofcompliance ??pleaseseewww.vishay.com/doc?99912 APPLICATIONS ?

VishayVishay Siliconix

威世科技威世科技半導體

SIHG47N60E

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=47A@TC=25℃ ·DrainSourceVoltage-VDSS=650V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=64mΩ(Max)@VGS=10V DESCRIPTION ·SwitchModePowerSupply(SMPS) ·UninterruptiblePowerSupply(UPS) ·PowerFactorCorrection(PFC)

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

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