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IXFH25N10

HIPERFET Power MOSFTETs

HiPerFETs ThehIPerFETfamilyofPowerMOSFETsisdesignedtoprovicesuperiordv/dt,performancewhileeliminatingtheneedfordiscrete,faserecoveryfreewheelingrectifiersInaboardrangeofpowerswitchingapplications.

IXYS

IXYS Corporation

ME25N10T

N-Channel100-V(D-S)MOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體(臺灣)有限公司

MTH25N10

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=25A@TC=25℃ ·DrainSourceVoltage-VDSS=100V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=75mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

MTM25N10

PowerFieldEffectTransistor

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司

MTM25N10

POWERFIELDEFFECTTRANSISTOR

Motorola

Motorola, Inc

MTM25N10

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=25A@TC=25℃ ·DrainSourceVoltage-VDSS=100V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=75mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

MTP25N10

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=25A@TC=25℃ ·DrainSourceVoltage-VDSS=100V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=85mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

NCEAP25N10AD

NCEAutomotiveN-ChannelSuperTrenchIIPowerMOSFET

Description TheNCEAP25N10ADusesSuperTrenchIItechnologythatis uniquelyoptimizedtoprovidethemostefficienthighfrequency switchingperformance.Bothconductionandswitchingpower lossesareminimizedduetoanextremelylowcombinationof RDS(ON)andQg.Thisdeviceisidealfor

NCEPOWERWuxi NCE Power Semiconductor Co., Ltd

無錫新潔能股份無錫新潔能股份有限公司

NCEAP25N10AG

NCEAutomotiveN-ChannelSuperTrenchIIPowerMOSFET

Description TheNCEAP25N10AGusesSuperTrenchIItechnologythatis uniquelyoptimizedtoprovidethemostefficienthighfrequency switchingperformance.Bothconductionandswitchingpower lossesareminimizedduetoanextremelylowcombinationof RDS(ON)andQg.Thisdeviceisidealfor

NCEPOWERWuxi NCE Power Semiconductor Co., Ltd

無錫新潔能股份無錫新潔能股份有限公司

NCEAP25N10AK

NCEAutomotiveN-ChannelSuperTrenchIIPowerMOSFET

Description TheNCEAP25N10AKusesSuperTrenchIItechnologythatis uniquelyoptimizedtoprovidethemostefficienthighfrequency switchingperformance.Bothconductionandswitchingpower lossesareminimizedduetoanextremelylowcombinationof RDS(ON)andQg.Thisdeviceisidealfor

NCEPOWERWuxi NCE Power Semiconductor Co., Ltd

無錫新潔能股份無錫新潔能股份有限公司

PJD25N10A

100VN-ChannelEnhancementModeMOSFET

Features ?RDS(ON),VGS@10V,ID@15A

PANJITPan Jit International Inc.

強茂強茂股份有限公司

PJD25N10A

100VN-ChannelEnhancementModeMOSFET

PANJITPan Jit International Inc.

強茂強茂股份有限公司

SID25N10-C

N-ChEnhancementModePowerMOSFET

SECOSSeCoS Halbleitertechnologie GmbH

喜可士喜可士股份有限公司

SSD25N10

N-ChEnhancementModePowerMOSFET

SECOSSeCoS Halbleitertechnologie GmbH

喜可士喜可士股份有限公司

ST25N10

N-ChannelMOSFETusesadvancedSGTtechnology

DOINGTERSHENZHEN DOINGTER SEMICONDUCTOR CO., LTD

杜因特深圳市杜因特半導(dǎo)體有限公司

ST25N10

TO-252packagedesign

STANSON

Stanson Technology

WSF25N10

N-ChannelMOSFETusesadvancedtrenchtechnology

DOINGTERSHENZHEN DOINGTER SEMICONDUCTOR CO., LTD

杜因特深圳市杜因特半導(dǎo)體有限公司

WSF25N10

N-ChMOSFET

WIINSOKShenzhen Guan Hua Wei Ye Co., Ltd

微碩半導(dǎo)體微碩半導(dǎo)體(深圳)有限公司

詳細參數(shù)

  • 型號:

    IXFH25N10

  • 制造商:

    IXYS

  • 制造商全稱:

    IXYS Corporation

  • 功能描述:

    HIPERFET Power MOSFTETs

供應(yīng)商型號品牌批號封裝庫存備注價格
IXYS
17+
TO-3P
6200
詢價
IXYS
23+
NA
19960
只做進口原裝,終端工廠免費送樣
詢價
IXYS
23+
TO-3P
6000
專做原裝正品,假一罰百!
詢價
IXYS
20+
TO-247
36900
原裝優(yōu)勢主營型號-可開原型號增稅票
詢價
IXYS
16+
TO-247
2100
公司大量全新現(xiàn)貨 隨時可以發(fā)貨
詢價
IXYS
24+
TO-247
560
詢價
IXYS/艾賽斯
23+
TO-3P
90000
只做原廠渠道價格優(yōu)勢可提供技術(shù)支持
詢價
IXYS/艾賽斯
23+
TO-247
10000
公司只做原裝正品
詢價
IXYS/艾賽斯
22+
247
6000
十年配單,只做原裝
詢價
IXYS/艾賽斯
23+
TO-247
90397
原廠授權(quán)一級代理,專業(yè)海外優(yōu)勢訂貨,價格優(yōu)勢、品種
詢價
更多IXFH25N10供應(yīng)商 更新時間2024-10-27 16:00:00