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IXBH42N170

High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor

VCES=1700V IC25=75A VCE(sat)=3.3V Features ?HighBlockingVoltage ?JEDECTO-268surfaceandJEDECTO-247AD ?Lowconductionlosses ?Highcurrenthandlingcapability ?MOSGateturn-on -drivesimplicity ?MoldingepoxiesmeetUL94V-0flammabilityclassification Applicatio

IXYS

IXYS Corporation

IXBH42N170

包裝:卷帶(TR)剪切帶(CT)Digi-Reel? 得捷定制卷帶 封裝/外殼:TO-247-3 類別:分立半導(dǎo)體產(chǎn)品 晶體管 - UGBT、MOSFET - 單 描述:IGBT 1700V 80A 360W TO247

IXYS

IXYS Corporation

IXBH42N170A

BIMOSFET Monolithic Bipolar MOS Transistor

Features ?HighBlockingVoltage ?JEDECTO-268surfaceandJEDECTO-247AD ?Fastswitching ?Highcurrenthandlingcapability ?MOSGateturn-on -drivesimplicity ?MoldingepoxiesmeetUL94V-0flammabilityclassification Applications ?ACmotorspeedcontrol

IXYS

IXYS Corporation

IXBH42N170A

包裝:管件 封裝/外殼:TO-247-3 類別:分立半導(dǎo)體產(chǎn)品 晶體管 - UGBT、MOSFET - 單 描述:IGBT 1700V 42A 357W TO247

IXYS

IXYS Corporation

IXBN42N170A

HighVoltage,HighGainBIMOSFETTMMonolithicBipolarMOSTransistor

Features ?InternationalStandardPackage ?miniBLOC,withAluminiumNitrideIsolation ?SquareRBSOA ?2500V~IsolationVoltage ?HighBlockingVoltage ?InternationalStandardPackage ?Anti-ParallelDiode ?LowConductionLosses Advantages ?LowGateDriveRequirement ?HighPowerDe

IXYS

IXYS Corporation

IXBR42N170

HighVoltage,HighGainBIMOSFETTMMonolithicBipolarMOSTransistor

Features ●SiliconchiponDirect-CopperBond(DCB)substrate ●Isolatedmountingsurface ●2500Velectricalisolation Advantages ●Lowgatedriverequirement ●Highpowerdensity Applications: ●Switched-modeandresonant-modepowersupplies ●Uninterruptiblepowersupplies(UPS) ●Lase

IXYS

IXYS Corporation

IXBT42N170A

BIMOSFETMonolithicBipolarMOSTransistor

Features ?HighBlockingVoltage ?JEDECTO-268surfaceandJEDECTO-247AD ?Fastswitching ?Highcurrenthandlingcapability ?MOSGateturn-on -drivesimplicity ?MoldingepoxiesmeetUL94V-0flammabilityclassification Applications ?ACmotorspeedcontrol

IXYS

IXYS Corporation

產(chǎn)品屬性

  • 產(chǎn)品編號:

    IXBH42N170

  • 制造商:

    IXYS

  • 類別:

    分立半導(dǎo)體產(chǎn)品 > 晶體管 - UGBT、MOSFET - 單

  • 系列:

    BIMOSFET?

  • 包裝:

    卷帶(TR)剪切帶(CT)Digi-Reel? 得捷定制卷帶

  • 不同?Vge、Ic 時?Vce(on)(最大值):

    2.8V @ 15V,42A

  • 輸入類型:

    標(biāo)準(zhǔn)

  • 工作溫度:

    -55°C ~ 150°C(TJ)

  • 安裝類型:

    通孔

  • 封裝/外殼:

    TO-247-3

  • 供應(yīng)商器件封裝:

    TO-247AD

  • 描述:

    IGBT 1700V 80A 360W TO247

供應(yīng)商型號品牌批號封裝庫存備注價格
IXYS
24+
TO-247-3
30000
晶體管-分立半導(dǎo)體產(chǎn)品-原裝正品
詢價
IXYS
23+
DIP18
6000
15年原裝正品企業(yè)
詢價
IXYS
23+
TO-247
3000
全新原裝
詢價
IXYS
24+
TO-247
8866
詢價
IXYS
23+
TO-3P
5000
原裝正品,假一罰十
詢價
IXYS
23+
NA
19960
只做進口原裝,終端工廠免費送樣
詢價
IXYS
24+
SMD
5500
長期供應(yīng)原裝現(xiàn)貨實單可談
詢價
IXYS
2023+
TO-247
80000
一級代理/分銷渠道價格優(yōu)勢 十年芯程一路只做原裝正品
詢價
IXYS
18+
TO-247
2050
公司大量全新原裝 正品 隨時可以發(fā)貨
詢價
IXYS
1931+
N/A
284
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更多IXBH42N170供應(yīng)商 更新時間2024-12-25 11:05:00